Granted Patent B2

US 12,203,811 · App. 17/764,381 · Granted Jan 21, 2025

Inventors: Geoffroy Dumont (Grenoble, FR); Sébastien Becker (Grenoble, FR)

Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

G01J5/024H10N15/10

Abstract

Claims (21)

1. A process for fabricating a device for detecting electromagnetic radiation, comprising:

producing, on a substrate, at least one thermal detector, which is covered by at least one mineral sacrificial layer made of a mineral material able to be removed by a first chemical etch;

producing a through-aperture that extends through the mineral sacrificial layer and that opens onto the substrate;

producing a getter segment made of a metal that has a gettering effect, the getter segment being placed on and in contact with the substrate and at a distance from the thermal detector in a plane parallel to the substrate, the getter segment being located in the through-aperture, at a distance from a lateral border that is defined by the mineral sacrificial layer and that bounds the through-aperture in the plane parallel to the substrate;

producing a carbon-containing sacrificial layer made of a carbon-containing material that is inert to the first chemical etch and that is able to be removed by a second chemical etch, so as to cover the getter segment and to surround it in the plane parallel to the substrate, and to completely fill the through-aperture;

producing a thin encapsulation layer comprising: a top portion that rests on the mineral sacrificial layer and on the carbon-containing sacrificial layer; and a peripheral portion that extends through the mineral sacrificial layer and that surrounds the thermal detector and the getter segment;

removing the mineral sacrificial layer via the first chemical etch; and

removing the carbon-containing sacrificial layer via the second chemical etch.

2. The process as claimed in claim 1 , wherein the getter segment is placed between the thermal detector and the peripheral portion of the thin encapsulation layer.

3. The process as claimed in claim 1 , wherein the peripheral portion comprises an internal surface, which is oriented toward the thermal detector, and which makes contact with the carbon-containing sacrificial layer.

4. The process as claimed in claim 1 , wherein the mineral sacrificial layer and the carbon-containing sacrificial layer have, opposite the substrate, top faces that are coplanar.

5. The process as claimed in claim 1 , wherein the mineral material comprises at least silicon oxide or silicon nitride, and the first chemical etch is an etch in hydrofluoric-acid vapor.

6. The process as claimed in claim 1 , wherein the carbon-containing material is chosen from amorphous carbon and polyimide, and the second chemical etch is a dry oxygen-plasma etch.

7. The process as claimed in claim 1 , wherein the metal that has a gettering effect is chosen from titanium, zirconium, vanadium, chromium, cobalt, iron, manganese, palladium, barium, and/or aluminum, and an alloy of these metals.

8. The process as claimed in claim 1 , comprising producing at least one first release vent and at least one second release vent through the top portion of the thin encapsulation layer, the first release vent opening onto the mineral sacrificial layer, and the second release vent opening onto the carbon-containing sacrificial layer.

9. The process as claimed in claim 8 , wherein the first and second release vents are produced before the first chemical etch, the carbon-containing sacrificial layer under the top portion of the thin encapsulation layer making contact with the mineral sacrificial layer.

10. The process as claimed in claim 8 , wherein the thin encapsulation layer further comprises an internal portion that extends from the top portion of the thin encapsulation layer toward the substrate, and that is placed between the mineral sacrificial layer and the carbon-containing sacrificial layer, so that the carbon-containing sacrificial layer under the top portion of the thin encapsulation layer makes contact with the top portion of the thin encapsulation layer, peripheral portion and internal portion of the thin encapsulation layer.

11. The process as claimed in claim 10 , wherein the step of producing the second release vents comprises, in addition to forming at least one second release vent that opens onto the carbon-containing sacrificial layer, forming at least one vent located plumb with the internal portion and that breaks a physical link, at least locally, between the internal portion and the top portion, thus ensuring, after the second chemical etch, communication between a first space in which the thermal detector is located and a second space in which the getter segment is located.

12. The process as claimed in claim 10 , wherein the internal portion rests in contact with a carbon-containing segment placed in contact with the substrate and made of a carbon-containing material that is inert to the first chemical etch and that is able to be removed by the second chemical etch, so that the second chemical etch removes the carbon-containing sacrificial layer and releases the getter segment, and removes the carbon-containing segment and ensures communication between a first space in which the thermal detector is located and a second space in which the getter segment is located.

13. The process as claimed in claim 1 , wherein a plurality of thermal detectors are produced simultaneously, each comprising a membrane configured to absorb the electromagnetic radiation to be detected, said membrane being suspended above the substrate by anchoring pillars and being thermally insulated from the substrate by holding arms.

14. The process as claimed in claim 1 , wherein the top portion of the thin encapsulation layer rests on and in contact with the mineral sacrificial layer, and rests on and in contact of the carbon-containing sacrificial layer.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (28)

Cited By (1)

US 12,546,658