3D IC comprising semiconductor substrates with different bandgaps
Various embodiments of the present disclosure are directed towards a three-dimensional (3D) IC comprising semiconductor substrates with different bandgaps. The 3D IC chip comprises a first IC chip and a second IC chip overlying and bonded to the first IC chip. The first IC chip comprises a first semiconductor substrate with a first bandgap, and further comprises and a first device on and partially formed by the first semiconductor substrate. The second IC chip comprises a second semiconductor substrate with a second bandgap different than the first bandgap, and further comprises a second device on the second semiconductor substrate.
1. A three-dimensional (3D) integrated circuit (IC), comprising:
a first IC chip comprising a first semiconductor substrate and a first semiconductor device on and partially formed by the first semiconductor substrate;
a second IC chip comprising a second semiconductor substrate and a second semiconductor device on and partially formed by the second semiconductor substrate;
a third IC chip and a fourth IC chip;
a first power converter circuit formed by the first and second IC chips; and
a second power converter circuit formed by the third and fourth IC chips;
wherein the first, second, third, and fourth IC chips are vertically stacked and are bonded together, wherein the first semiconductor substrate has a larger band gap than the second semiconductor substrate, and wherein the first and second power converter circuits are electrically coupled together in series to convert a first voltage at the first IC chip to a second voltage less than the first voltage at the fourth IC chip.
2. The 3D IC according to claim 1 , wherein the first semiconductor substrate comprises gallium nitride, and wherein the second semiconductor substrate comprises silicon.
3. The 3D IC according to claim 1 , wherein the first power converter circuit is formed in part by the first semiconductor device and is formed in part by the second semiconductor device.
4. The 3D IC according to claim 1 , wherein the first and second semiconductor devices are active semiconductor devices.
5. The 3D IC according to claim 1 , wherein the third IC chip comprises a third semiconductor substrate and a third semiconductor device on and partially formed by the third semiconductor substrate, wherein the fourth IC chip comprises a fourth semiconductor substrate and a fourth semiconductor device on and partially formed by the fourth semiconductor substrate, and wherein the first and third semiconductor substrates share a first common bandgap, which is larger than a second bandgap shared by the second and fourth semiconductor substrates.
6. A three-dimensional (3D) integrated circuit (IC), comprising:
a first semiconductor substrate;
a first device and a first interconnect structure on the first semiconductor substrate, wherein the first device is on and partially formed by the first semiconductor substrate, and is between the first semiconductor substrate and the first interconnect structure;
a second semiconductor substrate overlying the first semiconductor substrate and the first interconnect structure;
a second device and a second interconnect structure on the second semiconductor substrate, wherein the second device is between the second semiconductor substrate and the second interconnect structure; and
a third semiconductor device in the first or second interconnect structure, spaced from the first and second semiconductor substrates,
wherein the first and second semiconductor substrates respectively comprise different semiconductor types.
7. The 3D IC according to claim 6 , wherein the first and second devices are transistors formed in part by the different semiconductor types, respectively.
8. The 3D IC according to claim 6 , wherein the first semiconductor substrate comprises a group III-V heterojunction structure.
9. The 3D IC according to claim 6 , further comprising:
a radio frequency (RF) circuit formed in part by the first and second devices and comprising a transceiver and/or a front-end module (FEM).
10. The 3D IC according to claim 6 , wherein the first device is an active device, and wherein the second device is a passive device.
11. The 3D IC according to claim 6 , wherein the second device is a radio frequency (RF) antenna.
12. The 3D IC according to claim 6 , wherein the first and second devices and the first and second interconnect structures are between the first and second semiconductor substrates.
13. The 3D IC according to claim 6 , wherein the first semiconductor substrate has a wider bandgap than the second semiconductor substrate and is between the first and second interconnect structures, and wherein the 3D IC further comprises:
a through substrate via extending through the first semiconductor substrate to electrically couple the first and second interconnect structures together.
14. A method for forming a three-dimensional (3D) integrated circuit (IC), the method comprising:
forming a first IC chip comprising a first semiconductor substrate, a first device on and partially formed by the first semiconductor substrate, and a first interconnect structure;
forming a second IC chip comprising a second semiconductor substrate, and a second device on the second semiconductor substrate, and a second interconnect structure; and
bonding and electrically coupling the first and second IC chips together while the second IC chip overlies the first IC chip and while the first and second interconnect structures are between the first and second semiconductor substrates;
wherein the first semiconductor substrate has a different band gap than the second semiconductor substrate, and wherein the first and second interconnect structures each comprise multiple levels of wires and multiple levels of vias that are alternatingly and vertically stacked away from corresponding semiconductor substrates.
15. The method according to claim 14 , wherein the bonding comprising:
bonding individual dielectric layers of the first and second IC chips together at a bond interface; and
bonding individual metal pads of the first and second IC chips together at the bond interface.
16. The method according to claim 14 , wherein the first device is a high-electron-mobility transistor (HEMT), and wherein the second device is a local oscillator or a mixer.
17. The method according to claim 14 , wherein the first IC chip comprises a support substrate on which the first semiconductor substrate is arranged, and wherein the method further comprises:
removing the support substrate after the bonding.
18. The 3D IC according to claim 6 , further comprising:
a third semiconductor substrate and a fourth semiconductor substrate that are stacked with the first and second semiconductor substrates;
a first power converter on the first and second semiconductor substrates; and
a second power converter on the third and fourth semiconductor substrate,
wherein the first and second power converters are electrically coupled together in series to convert a first voltage at the first semiconductor substrate to a second voltage less than the first voltage at the fourth semiconductor substrate.
19. The 3D IC according to claim 18 , wherein the first and third semiconductor substrates share a first common bandgap, which is larger than a second bandgap shared by the second and fourth semiconductor substrates.
20. The method according to claim 14 , further comprising:
forming a third IC chip and a fourth IC chip; and
bonding the third and fourth IC chips to the second IC chip with the third IC chip being between the second and fourth IC chips,
wherein the first and second IC chips are formed with a first power converter circuit, wherein the third and fourth IC chips are formed with a second power converter circuit, and wherein the first and second power converter circuits are electrically coupled together in series to convert a first voltage at the first IC chip to a second voltage less than the first voltage at the fourth IC chip.