Polishing composition for semiconductor process and manufacturing method for polished article
Embodiments provide a polishing composition for a semiconductor process facilitating the formation of a microcircuit pattern and minimizing the generation of defects and scratches and a method of preparing a polished article using the same. Embodiments provide a polishing composition for a semiconductor process, in which the absorbance ratio of a group having a specific size of particle diameter compared to the overall average particle size (D 50 ) is a predetermined ratio or less with respect to the absorbance of a group having a particle diameter more than 0.5 times and 2.5 times or less the overall average particle size.
1. A polishing composition for a semiconductor process, comprising:
polishing particles,
wherein the polishing particles have an overall average particle size corresponding to D 50 , and comprises a plurality of polishing particle groups with different average particle sizes,
in which a first polishing particle group is a group with a particle diameter more than 22.5 times and 125 times or less the overall average particle size,
a second polishing particle group is a group with a particle diameter more than 0.5 times and 2.5 times or less the overall average particle size,
an absorbance is defined by Equation 1 below, and
a ratio A1/A2 of the absorbance A1 of the first polishing particle group and the absorbance A2 of the second polishing particle group is 0.38 to 1.5:
Absorbance=log( I 0 /I 1) [Equation 1]
In Equation 1, I0 is an amount of light when irradiating light of at least one wavelength of 385 to 425 nm in a liquid in which a grain size gradient is formed by centrifuging the polishing composition for a semiconductor process, and I1 is an amount of the irradiated light passing through the liquid, and
wherein the polishing composition has a zeta potential of 15 to 45 mV.
2. The composition of claim 1 , wherein the overall average particle size (D 50 ) of the polishing particles is 20 to 60 nm.
3. The composition of claim 1 , wherein the absorbance fraction of the first polishing particle group with respect to the absorbance of the total polishing particles is 50% or less.
4. The composition of claim 1 , wherein the absorbance fraction of the second polishing particle group with respect to the absorbance of the total polishing particles is 38% or more.
5. The composition of claim 1 , wherein a 1a polishing particle group is a group with a particle diameter 37.5 to 125 times the overall average particle size, and
the ratio A1a/A2 of the absorbance A1a of the 1a polishing particle group and the absorbance A2 of the second polishing particle group is 0.8 or less.
6. The composition of claim 1 , wherein the polishing particles comprise any one or more polishing particles selected from the group consisting of silica, ceria, cerium hydroxide, diamond, zirconia, titania, zeolite, and silicon nitride.
7. The composition of claim 1 , which comprises the polishing particles at 5 wt % or more and 20 wt % or less, and comprises one or more additives selected from the group consisting of a dispersant, a corrosion inhibitor, a polishing rate enhancer, a pH adjuster, and a surfactant.
8. The composition of claim 1 , wherein, in Equation 1, the rotational speed in centrifugation is 14,000 rpm, and the viscosity of the liquid is 1.8 cp.
9. The composition of claim 1 , which is applied as a slurry for chemical mechanical polishing.
10. The composition of claim 1 , wherein a scratch is a defect having a length of 1 μm or more,
when polishing a silicon wafer, the polishing rate is 1,000 Å/min or more, and
less than one scratch is formed on the polished silicon wafer.
11. The composition of claim 1 , wherein the particle diameter of the first polishing particle group is 0.9 to 5 μm, and the particle diameter of the second polishing particle group is 20 to 100 nm.
12. A method of manufacturing a polished article, comprising:
a polishing step of polishing a target using the polishing composition for a semiconductor process,
wherein the target is any one or more selected from the group consisting of a substrate, a metal formed on the substrate, and an insulating film formed on the substrate, and
wherein the polishing composition for a semiconductor process comprises polishing particles that have an overall average particle size corresponding to D 50 and comprise a plurality of polishing particle groups with different average particle sizes,
in which a first polishing particle group is a group with a particle diameter of more than 22.5 times and 125 times or less the overall average particle size,
a second polishing particle group is a group with a particle diameter of more than 0.5 times and 2.5 times or less the overall average particle size,
an absorbance is defined by Equation 1 below, and
a ratio A1/A2 of the absorbance A1 of the first polishing particle group and the absorbance A2 of the second polishing particle group is 1.5 or less:
Absorbance=log( I 0 /I 1) [Equation 1]
In Equation 1, I0 is an amount of light when irradiating light of at least one wavelength of 385 to 425 nm in a liquid in which a grain size gradient is formed by centrifuging the polishing composition for a semiconductor process, and I1 is an amount of the irradiated light passing through the liquid, and
wherein the polishing composition has a zeta potential of 15 to 45 mV.
13. The method of claim 12 , wherein the target has a substrate having a concave or convex pattern on the surface thereof,
the concave or convex pattern comprises a metal, and
the width of the concave pattern ranges from 3 to 16 nm.