Electrode structure including metal and heat dissipation layer and semiconductor including the electrode structure
View Patent ↗A semiconductor device includes a substrate. A first heat dissipation layer is disposed on the substrate and extends in a first direction. A metal layer is disposed on the first heat dissipation layer and extends in the first direction. A width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction. The first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
1 . A semiconductor device comprising:
a substrate;
a first heat dissipation layer disposed on the substrate and extending in a first direction; and
a metal layer disposed on the first heat dissipation layer and extending in the first direction,
wherein a width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction and outer ends of the first heat dissipation layer are disposed outside outer ends of the metal layer in a plan view, and
the first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
2 . The semiconductor device of claim 1 , further comprising a first insulating layer interposed between the first heat dissipation layer and the metal layer,
wherein the first insulating layer includes boron nitride.
3 . The semiconductor device of claim 1 , further comprising a second heat dissipation layer disposed on the metal layer and covering the metal layer.
4 . The semiconductor device of claim 3 , wherein the second heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
5 . The semiconductor device of claim 3 , further comprising a second insulating layer interposed between the metal layer and the second heat dissipation layer,
wherein the second insulating layer includes boron nitride.
6 . The semiconductor device of claim 3 , wherein at least a portion of the second heat dissipation layer overlaps the metal layer in the second direction.
7 . The semiconductor device of claim 1 , further comprising an adhesive layer interposed between the first heat dissipation layer and the metal layer.
8 . The semiconductor device of claim 7 , wherein the adhesive layer includes at least one among titanium (Ti), chromium (Cr), nickel (Ni), iron (Fe), and a combination thereof.
9 . The semiconductor device of claim 1 , wherein the metal layer includes at least one among copper (Cu), ruthenium (Ru), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), chromium (Cr), and a combination thereof.
10 . A semiconductor device comprising:
a substrate;
an active pattern on the substrate and extending in a first direction;
a gate electrode disposed on the active pattern and extending in a second direction intersecting the first direction; and
a line structure disposed on the gate electrode and extending in the first direction,
wherein the line structure includes a first line heat dissipation layer and a line metal layer on the first line heat dissipation layer,
a width of the first line heat dissipation layer in the second direction is greater than a width of the line metal layer in the second direction and outer ends of the first line heat dissipation layer are disposed outside outer ends of the line metal layer in a plan view, and
the first line heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
11 . The semiconductor device of claim 10 , further comprising a line insulating layer interposed between the first line heat dissipation layer and the line metal layer,
wherein the line insulating layer includes boron nitride.
12 . The semiconductor device of claim 10 , wherein the line metal layer includes at least one among copper (Cu), ruthenium (Ru), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), chromium (Cr), and a combination thereof.
13 . The semiconductor device of claim 10 , further comprising a second line heat dissipation layer disposed on the line metal layer and covering the line metal layer,
wherein the second line heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
14 . The semiconductor device of claim 13 , wherein at least a portion of the second line heat dissipation layer overlaps the line metal layer in the second direction.
15 . The semiconductor device of claim 10 , further comprising a line adhesive layer interposed between the first line heat dissipation layer and the line metal layer,
wherein the line adhesive layer includes at least one among titanium (Ti), chromium (Cr), nickel (Ni), iron (Fe), and a combination thereof.
16 . A semiconductor device comprising:
a substrate;
bit lines on the substrate and extending in a first direction;
a buried contact disposed between the bit lines and connected to the substrate;
a landing pad on the buried contact; and
a capacitor structure disposed on the landing pad and connected to the landing pad,
wherein the bit line includes a first bit line heat dissipation layer and a bit line metal layer on the first bit line heat dissipation layer,
a width of the first bit line heat dissipation layer in a second direction intersecting the first direction is greater than a width of the bit line metal layer in the second direction and outer ends of the first bit line heat dissipation layer are disposed outside outer ends of the bit line metal layer in a plan view, and
the first bit line heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
17 . The semiconductor device of claim 16 , further comprising a bit line insulating layer interposed between the first bit line heat dissipation layer and the bit line metal layer,
wherein the bit line insulating layer includes boron nitride.
18 . The semiconductor device of claim 16 , wherein the bit line metal layer includes at least one among copper (Cu), ruthenium (Ru), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), chromium (Cr), and a combination thereof.
19 . The semiconductor device of claim 16 , further comprising a second bit line beat dissipation layer disposed on the bit line metal layer and covering the bit line metal layer,
wherein the second bit line heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.
20 . The semiconductor device of claim 19 , wherein at least a portion of the second bit line heat dissipation layer overlaps the bit line metal layer in the second direction.