Contact structures in RC-network components
RC-network components that include a substrate having a capacitor with a thin-film top electrode portion at a surface at one side of the substrate. The low ohmic semiconductor substrate is doped to contribute 5% or less to the resistance of the RC-network component. The resistance in series with the capacitor is controlled by providing a contact plate, spaced from the top electrode portion by an insulating layer, and a set of one or more bridging contacts in openings in the insulating layer. The bridging contacts electrically interconnect the top electrode portion and contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. Temperature concentration at the periphery of the openings is reduced by providing reduced thickness portions in the insulating layer around the periphery of the openings.
1 . An integrated RC-network component comprising:
a substrate;
a capacitor having a thin-film top electrode portion at a surface on a first side of the substrate;
an insulating layer on the thin-film top electrode portion of the capacitor;
a contact plate on the insulating layer; and
one or more bridging contacts in openings traversing the insulating layer, the bridging contacts electrically connecting the thin-film top electrode portion of the capacitor to the contact plate,
wherein the substrate is a low ohmic semiconductor substrate doped to make a contribution of no more than 5% to a resistance of the RC-network component,
in a direction of a thickness of the thin-film top electrode portion of the capacitor, a length of the bridging contacts is sufficiently greater than the thickness of the thin-film top electrode portion that an equivalent series resistance of the capacitor is proportional to a sheet resistance of the thin-film top electrode portion divided by a number of bridging contacts, and
the insulating layer comprises reduced-thickness portions located around perimeters of the openings, and in the reduced-thickness portions the thickness of insulating material provided on the thin-film top electrode portion is lower than the thickness of a remainder of the insulating layer.
2 . The RC-network component according to claim 1 , wherein the insulating layer has a stepped shape at a periphery of the openings due to the reduced-thickness portions.
3 . The RC-network component according to claim 1 , wherein the reduced-thickness portions have a tapered shape.
4 . The RC-network component according to claim 3 , wherein the reduced-thickness portions have a truncated tapered profile or a curved profile.
5 . The RC-network component according to claim 1 , wherein the thickness of the thin-film top electrode portion is less than 5 μm.
6 . The RC-network component according to claim 1 , wherein the insulating layer is made of a silicon compound.
7 . The RC-network component according to claim 1 , wherein the bridging contacts are made of a material having conductivity greater than that of the material forming the top capacitor electrode.
8 . The RC-network component according to claim 1 , wherein the bridging contacts and the contact plate are an integral same material.
9 . The RC-network component according to claim 1 , wherein the thin-film top electrode portion of the capacitor is made of polysilicon.
10 . The RC-network component according to claim 1 , wherein the RC-network component has first and second contacts provided, respectively, at said first side of the substrate and at a second side of the substrate opposite to said first side, the first contact comprises said contact plate, and a series RC circuit is constituted between the first and second contacts.
11 . The RC-network component according to claim 10 , wherein the capacitor is a 3D capacitor, and a bottom electrode of the 3D capacitor is constituted by the low ohmic semiconductor substrate.
12 . The RC-network component according to claim 1 , wherein an only part of the capacitor top electrode to be located at said surface on the first side of the substrate is a single planar sheet constituting said thin-film top electrode portion.
13 . A monolithic RC-network component comprising the RC-network component according to claim 1 .
14 . A method of fabricating an RC-network component, the method comprising:
forming a capacitor having a thin-film top electrode portion at a surface on a first side of a substrate;
forming an insulating layer on the thin-film electrode portion of the capacitor;
forming one or more bridging contacts traversing openings in the insulating layer; and
forming a plate-shaped contact on the insulating layer,
wherein said bridging contacts electrically connect the thin-film top electrode portion of the capacitor to the plate-shaped contact,
the substrate is a low ohmic semiconductor substrate doped to make a contribution of no more than 5% to a resistance of the RC-network component,
in a direction of a thickness of the thin-film top electrode portion of the capacitor, a length of the bridging contacts is sufficiently greater than the thickness of the thin-film top electrode portion that an equivalent series resistance of the capacitor is proportional to a sheet resistance of the thin-film top electrode portion divided by a number of bridging contacts, and
the insulating layer comprises reduced-thickness portions located around perimeters of the openings, and in the reduced-thickness portions the thickness of insulating material provided on the thin-film top electrode portion is lower than the thickness of a remainder of the insulating layer.