Semiconductor device and semiconductor module
A semiconductor device includes a semiconductor IC, a capacitor element, a support portion, a first conductor and second conductor, and a sealing body. The semiconductor IC has a first IC terminal and a second IC terminal. The capacitor element has a first terminal and a second terminal. The support portion supports the capacitor element and the semiconductor IC. The first conductor and second conductor extend so as to connect the first terminal and second terminal with, respectively, the first IC terminal and second IC terminal. The sealing body encloses the capacitor element, the semiconductor IC, the first conductor, the second conductor and the support portion. The first IC terminal and second IC terminal, the first terminal and second terminal, the first conductor and the second conductor are disposed at the inner side relative to an outer edge of the support portion.
1 . A semiconductor device comprising:
a semiconductor IC including a semiconductor integrated circuit, a first IC terminal and a second IC terminal;
a capacitor element including a first terminal and a second terminal;
a support portion including a support region with a principal surface that supports the capacitor element and the semiconductor IC;
a first conductor and a second conductor that extend so as to connect the first terminal and second terminal of the capacitor element with, respectively, the first IC terminal and second IC terminal of the semiconductor IC; and
a sealing body that encloses the capacitor element, the semiconductor IC, the first conductor, the second conductor and the support region,
wherein, in a plan view, the first IC terminal and second IC terminal of the semiconductor IC, the first terminal and second terminal of the capacitor element, the first conductor and the second conductor are disposed at the inner side relative to an outer edge of the principal surface of the support region,
the semiconductor integrated circuit includes an internal circuit and a voltage regulator that provides power to the internal circuit,
the voltage regulator has an output that is connected to the first IC terminal,
the electrical connection, including the first IC terminal and second IC terminal of the semiconductor IC, the first terminal and second terminal of the capacitor element, the first conductor and the second conductor are electrically closed by the semiconductor integrated circuit,
wherein, the support region is a metal body, and, as seen in a direction orthogonal to the principal surface of the support region, an entirety of the electrical connection closed by the semiconductor integrated circuit is contained in the principal surface of the support region.
2 . The semiconductor device according to claim 1 , wherein
the support portion includes a lead frame,
the lead frame includes a die pad, the die pad being the support region, and a plurality of lead terminals spaced apart from the die pad, and
the sealing body includes resin that seals in the capacitor element, the semiconductor IC, the first conductor, the second conductor and the die pad.
3 . The semiconductor device according to claim 2 , wherein at least one of the plurality of lead terminals is inflected in a first direction toward the capacitor element from the die pad.
4 . The semiconductor device according to claim 2 , wherein all of the plurality of lead terminals are inflected in a first direction toward the capacitor element from the die pad.
5 . The semiconductor device according to claim 1 , wherein the first conductor includes a bonding wire that directly connects the first IC terminal of the semiconductor IC with the first terminal of the capacitor element.
6 . The semiconductor device according to claim 1 , wherein
the second conductor includes a bonding wire that directly connects the second IC terminal of the semiconductor IC with the principal surface of the support region, and
the second terminal of the capacitor element is connected with the principal surface of the support region by a conductive adhesive.
7 . The semiconductor device according to claim 1 , wherein
the second conductor includes a bonding wire that directly connects the second IC terminal of the semiconductor IC with the second terminal of the capacitor element.
8 . A semiconductor module comprising:
the semiconductor device according to claim 1 ; and
a printed circuit board with a principal surface that includes a mounting area on which the semiconductor device is mounted,
wherein the first IC terminal and second IC terminal of the semiconductor IC, the first terminal and second terminal of the capacitor element, the first conductor and the second conductor are provided between the printed circuit board and the support region.
9 . A semiconductor module comprising:
the semiconductor device according to claim 1 ; and
a printed circuit board with a principal surface that includes a mounting area on which the semiconductor device is mounted, wherein:
the printed circuit board, the semiconductor IC and the support region are arranged in this order along a first axis direction that is orthogonal to the principal surface of the printed circuit board;
the printed circuit board includes a conductive layer; and
the first IC terminal and second IC terminal of the semiconductor IC, the first terminal and second terminal of the capacitor element, the first conductor and the second conductor are provided between the conductive layer of the printed circuit board and the support region.
10 . The semiconductor module according to claim 9 , wherein
the conductive layer includes a plurality of first conductive stripes extending in a first direction of the principal surface of the printed circuit board and a plurality of second conductive stripes extending in a second direction of the principal surface of the printed circuit board, the second direction intersecting with the first direction, and
at least some of the first conductive stripes intersect with at least some of the second conductive stripes.
11 . The semiconductor module according to claim 9 , wherein the conductive layer is a simply connected conductive film provided at the mounting area.
12 . The semiconductor module according to claim 11 , wherein, in a plan view seen in the first axis direction,
an outer edge of the conductive layer encompasses an outer edge of the capacitor element and encompasses the first conductor and the second conductor, and
the outer edge of the conductive layer overlaps with a portion of the semiconductor IC.
13 . The semiconductor device of claim 1 , wherein the electrical connection closed by the semiconductor integrated circuit forms a loop-shaped antenna.
14 . The semiconductor device according to claim 1 , wherein the support region blocks magnetic flux in a direction from the support region toward the capacitor element.
15 . The semiconductor device according to claim 1 , wherein the semiconductor IC and the capacitor element are disposed in proximity to each other on the principal surface so as to reduce a size of the electrical connection closed by the semiconductor integrated circuit.