Imaging device and electronic device
An imaging device which has a stacked-layer structure and can be manufactured easily is provided. The imaging device includes a signal processing circuit, a memory device, and an image sensor. The imaging device has a stacked-layer structure in which the memory device is provided above the signal processing circuit, and the image sensor is provided above the memory device. The signal processing circuit includes a transistor formed on a first semiconductor substrate, the memory device includes a transistor including a metal oxide in a channel formation region, and the image sensor includes a transistor formed on a second semiconductor substrate.
1. A semiconductor device comprising:
a first layer comprising a plurality of circuits;
a second layer above the first layer, the second layer comprising a plurality of memory cells electrically connected to the plurality of circuits; and
a third layer above the second layer, the third layer comprises an image sensor electrically connected to the plurality of circuits,
wherein one of the plurality of circuits comprises a first transistor,
wherein the first transistor comprises a first crystalline semiconductor material in a channel formation region,
wherein each of the plurality of memory cells comprises a second transistor,
wherein the second transistor comprises a metal oxide in a channel formation region and a gate and a back gate with the channel formation region provided therebetween,
wherein the image sensor comprises a plurality of pixels each comprising a third transistor and a photodiode,
wherein the third transistor comprises a second crystalline semiconductor material in a channel formation region, and
wherein a semiconductor region of the photodiode comprises the second crystalline semiconductor material.
2. The semiconductor device according to claim 1 ,
wherein at least one of the first crystalline semiconductor material and the second crystalline semiconductor material is single crystal silicon.
3. The semiconductor device according to claim 1 ,
wherein the channel formation region of the first transistor is provided in a first semiconductor substrate, and
wherein the channel formation region of the third transistor is provided in a second semiconductor substrate.
4. The semiconductor device according to claim 1 ,
wherein the metal oxide comprises at least indium and zinc.
5. The semiconductor device according to claim 1 ,
wherein the plurality of pixels are stacked over the plurality of the memory cells.
6. The semiconductor device according to claim 1 ,
wherein at least part of the third transistor overlaps with the second transistor and the first transistor.
7. A semiconductor device comprising:
a first layer comprising a plurality of circuits;
a second layer above the first layer, the second layer comprising a plurality of memory cells electrically connected to the plurality of circuits; and
a third layer above the second layer, the third layer comprises an image sensor electrically connected to the plurality of circuits,
wherein one of the plurality of circuits comprises a first transistor,
wherein the first transistor comprises a first crystalline semiconductor material in a channel formation region,
wherein each of the plurality of memory cells comprises a second transistor and a capacitor,
wherein the second transistor comprises a metal oxide in a channel formation region, a source, a drain, and a gate and a back gate with the channel formation region provided therebetween,
wherein a first electrode of the capacitor is electrically connected to one of the source and the drain of the second transistor,
wherein the image sensor comprises a plurality of pixels each comprising a third transistor and a photodiode,
wherein the third transistor comprises a second crystalline semiconductor material in a channel formation region, and
wherein a semiconductor region of the photodiode comprises the second crystalline semiconductor material.
8. The semiconductor device according to claim 7 ,
wherein at least one of the first crystalline semiconductor material and the second crystalline semiconductor material is single crystal silicon.
9. The semiconductor device according to claim 7 ,
wherein the channel formation region of the first transistor is provided in a first semiconductor substrate, and
wherein the channel formation region of the third transistor is provided in a second semiconductor substrate.
10. The semiconductor device according to claim 7 ,
wherein the metal oxide comprises at least indium and zinc.
11. The semiconductor device according to claim 7 ,
wherein the plurality of pixels are stacked over the plurality of the memory cells.
12. The semiconductor device according to claim 7 ,
wherein at least part of the third transistor overlaps with the second transistor, the capacitor, and the first transistor.