Semiconductor device and manufacturing method thereof
A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.
1 . A method for manufacturing a semiconductor device, comprising the steps of:
forming a first insulator;
forming an oxide film over the first insulator;
performing a first heat treatment;
forming a first conductive film, a first insulating film, and a second insulating film in this order over the oxide film;
processing the oxide film, the first conductive film, the first insulating film, and the second insulating film into an island shape to form an oxide, a conductive layer, a first insulating layer, and a second insulating layer;
forming a second insulator over the first insulator, the oxide, the conductive layer, the first insulating layer, and the second insulating layer;
forming a third insulator over the second insulator;
forming an opening reaching the oxide in the conductive layer, the first insulating layer, the second insulating layer, the second insulator, and the third insulator;
performing a second heat treatment;
forming a third insulating film over the third insulator and the opening;
performing a first microwave treatment;
forming a fourth insulating film over the third insulating film;
performing a second microwave treatment;
forming a second conductive film over the fourth insulating film;
performing a CMP treatment on the third insulating film, the fourth insulating film, and the second conductive film until a top surface of the third insulator is exposed to form an eighth insulator, a ninth insulator, and a third conductor; and
forming a tenth insulator over the third insulator, the eighth insulator, the ninth insulator, and the third conductor,
wherein in formation of the opening, a first conductor and a second conductor are formed from the conductive layer, a fourth insulator and a fifth insulator are formed from the first insulating layer, and a sixth insulator and a seventh insulator are formed from the second insulating layer.
2 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first insulating film, the second insulator, and the tenth insulator are each formed by a sputtering method where RF power is applied to a substrate.
3 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first insulating film, the second insulator, and the tenth insulator are each aluminum oxide.
4 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first microwave treatment and the second microwave treatment are performed within a temperature range of higher than or equal to 100° C. and lower than or equal to 750° C. at least in an oxygen atmosphere.
5 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first microwave treatment and the second microwave treatment are each performed within a temperature range of higher than or equal to 300° C. and lower than or equal to 500° C.
6 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first microwave treatment and the second microwave treatment are each performed within a pressure range of higher than or equal to 300 Pa and lower than or equal to 700 Pa.
7 . The method for manufacturing a semiconductor device, according to claim 2 ,
wherein the RF power is higher than 0 W/cm 2 and lower than or equal to 0.31 W/cm 2 .
8 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first heat treatment is performed within a range of higher than or equal to 250° C. and lower than or equal to 650° C. in a nitrogen atmosphere, and successively performed within a range of higher than or equal to 250° C. and lower than or equal to 650° C. in an oxygen atmosphere.
9 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second heat treatment is performed within a range of higher than or equal to 350° C. and lower than or equal to 400° C. in an oxygen atmosphere, and successively performed within a range of higher than or equal to 350° C. and lower than or equal to 400° C. in a nitrogen atmosphere.
10 . The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the oxide is an oxide semiconductor comprising any one or more selected from In, Ga, and Zn.
11 . A semiconductor device comprising:
an oxide;
a first conductor and a second conductor over the oxide;
a first insulator over the first conductor;
a second insulator over the second conductor;
a third insulator over the first insulator;
a fourth insulator over the second insulator;
a fifth insulator over the third insulator and the fourth insulator;
a sixth insulator over the fifth insulator;
a seventh insulator that is over the oxide and placed between the first conductor and the second conductor;
an eighth insulator over the seventh insulator;
a third conductor over the eighth insulator; and
a ninth insulator over the third conductor and the sixth to eighth insulators,
wherein the third conductor comprises a region overlapping the oxide,
wherein the seventh insulator comprises a region in direct contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators, and
wherein the first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.
12 . The semiconductor device according to claim 11 ,
wherein the third insulator and the fourth insulator each comprise silicon and nitrogen.
13 . The semiconductor device according to claim 11 ,
wherein the metal oxide is AlOx, and
wherein x is a given number greater than 0.
14 . The semiconductor device according to claim 11 ,
wherein the eighth insulator comprises hafnium.
15 . The semiconductor device according to claim 11 ,
wherein a thickness of the eighth insulator is greater than or equal to 0.5 nm and less than or equal to 3.0 nm.
16 . The semiconductor device according to claim 11 ,
wherein the oxide is an oxide semiconductor comprising any one or more selected from In, Ga, and Zn.