Stacked dies and methods for forming bonded structures

1. A bonded structure comprising:

a carrier;

a first die layer comprising:

a first surface and a second surface opposite the first surface, the first surface directly bonded to the carrier without an intervening adhesive, the second surface comprising a first non-conductive region and a first conductive region;

a first integrated device die; and

a first protective material comprising a first layer disposed along a sidewall of the first integrated device die and a second layer on the first layer, each of the first and second layers comprising a silicon-containing inorganic dielectric material; and

a second die layer comprising:

a third surface comprising a second non-conductive region directly bonded to the first non-conductive region and a second conductive region directly bonded to the first conductive region; and

a second integrated device die.

2. The bonded structure of claim 1 , wherein each of the first and second integrated device dies has a thickness less than 30 microns.

3. The bonded structure of claim 1 , wherein each of the first and second integrated device dies has a thickness less than 20 microns.

4. The bonded structure of claim 1 , wherein the first layer has a hardness greater than a bulk material of the first integrated device die.

5. The bonded structure of claim 4 , wherein the first layer has a hardness greater than the second layer.

6. The bonded structure of claim 1 , wherein the first layer comprises silicon nitride and the second layer comprises silicon oxide.

7. The bonded structure of claim 1 , further comprising a second protective material covering sidewalls of the second integrated device die.

8. The bonded structure of claim 7 , wherein the second protective material comprises multiple layers, each layer comprising a silicon-containing inorganic dielectric material.

9. The bonded structure of claim 8 , wherein the second protective material comprises a third layer disposed along a sidewall of the second integrated device die and a fourth layer disposed on the third layer, the third layer comprising silicon nitride and the fourth layer comprising silicon oxide.

10. The bonded structure of claim 1 , wherein the first integrated device die comprises a memory die, and wherein the second integrated device die comprises a processor die.

11. The bonded structure of claim 1 , wherein the first die layer comprises a third die, a portion of the first protective material disposed in a gap between the first integrated device die and the third die.

12. The bonded structure of claim 11 , wherein the portion of the first protective material completely fills the gap between the first integrated device die and the third die.

13. The bonded structure of claim 1 , wherein the second die layer further comprises a bonding layer between the second integrated device die and the first integrated device die, the bonding layer comprising the second non-conductive region and the second conductive region.

14. The bonded structure of claim 1 , wherein the carrier comprises a redistribution layer (RDL).

15. A bonded structure comprising:

a first die layer comprising:

an upper surface opposite a lower surface and outer side surfaces between the upper and lower surfaces, the upper surface comprising a first non-conductive region and a first conductive region;

a first integrated device die comprising side surfaces, an active side at a lower surface of the first die layer, and through-substrate vias; and

a first protective material disposed on the side surfaces of the first integrated device die; and

a second die layer comprising:

an upper surface opposite a lower surface, and outer side surfaces between the upper and lower surfaces; and

a second integrated device die comprising side surfaces and a bonding surface at the lower surface of the second die layer, wherein the bonding surface comprises a second non-conductive region directly bonded to the first non-conductive region and a second conductive region directly bonded to the first conductive region;

a third die spaced apart from the second integrated device die by a gap; and

a second protective material disposed on the side surfaces of the second integrated device die, the second protective material including one or more inorganic insulating materials completely filling the gap between the second integrated device die and the third die,

wherein the outer side surfaces of the first and second die layers are aligned in a manner characteristic of singulation after forming the first and second protective materials and directly bonding the second integrated device die to the upper surface of the first die layer.

16. The bonded structure of claim 15 , wherein the first protective material comprises multiple layers, each layer comprising a silicon-containing inorganic dielectric material.

17. The bonded structure of claim 15 , wherein the second non-conductive region is directly bonded to the first non-conductive region by way of a covalent bond.

18. The bonded structure of claim 15 , wherein the second protective material comprises multiple layers, each layer being a silicon-containing inorganic dielectric material.

19. The bonded structure of claim 15 , wherein each of the first and second integrated device dies has a thickness less than 20 microns.

20. The bonded structure of claim 15 , wherein the first die layer comprises a dielectric layer over the first integrated device die and the first protective material, a conductive material disposed in a cavity of the dielectric layer, the first non-conductive region comprising the dielectric layer and the first conductive region comprising the conductive material.

21. A bonded structure comprising:

a first die having a first surface, a second surface opposite the first surface, and a side surface extending between the first and second surfaces, the first die having a through-substrate via (TSV);

a first inorganic dielectric material disposed along the side surface of the first die, the first inorganic dielectric material comprising a first inorganic dielectric layer on the side surface of the first die and a second inorganic dielectric layer on the first inorganic dielectric layer, the first inorganic dielectric layer and the second inorganic dielectric layer comprising different materials;

a dielectric layer disposed over the first surface of the first die and the first inorganic dielectric material, a conductive material disposed in a cavity of the dielectric layer, the conductive material electrically connected to the TSV;

a second die directly bonded to the dielectric layer without an adhesive, the second die including a conductive region directly bonded to the conductive material without an adhesive; and

a second inorganic dielectric material disposed over the dielectric layer and along a side surface of the second die.

22. The bonded structure of claim 21 , wherein the dielectric layer comprises a redistribution layer (RDL).

23. The bonded structure of claim 21 , further comprising a third die directly bonded to the dielectric layer, a portion of the second inorganic dielectric material completely filling a gap between the second die and the third die.

24. The bonded structure of claim 23 , wherein the first die comprises a processor die, and the second die comprises a memory die.

25. The bonded structure of claim 21 , wherein the first inorganic dielectric layer has a hardness greater than a bulk material of the first die.

26. The bonded structure of claim 25 , wherein the first inorganic dielectric layer has a hardness greater than the second inorganic dielectric layer.

27. The bonded structure of claim 21 , wherein each of the first and second inorganic dielectric layers comprises a silicon-containing material.

28. The bonded structure of claim 25 , wherein the first inorganic dielectric layer comprises silicon nitride and the second inorganic dielectric layer comprises silicon oxide.

29. The bonded structure of claim 21 , wherein each of the first and second dies has a thickness less than 20 microns.

30. The bonded structure of claim 21 , further comprising a substrate directly bonded to the second die without an intervening adhesive.

31. A bonded structure comprising:

a first die having a first surface, a second surface opposite the first surface, and a side surface extending between the first and second surfaces;

a first inorganic dielectric material disposed along the side surface of the first die;

a dielectric layer disposed over the first surface of the first die and the first inorganic dielectric material;

a conductive interconnect at a planarized surface of the dielectric layer;

a second die directly bonded to the planarized surface of the dielectric layer and having a conductive region directly bonded to the conductive interconnect without an adhesive; and

a second inorganic dielectric material disposed over the dielectric layer and along a side surface of the second die, the second inorganic dielectric material comprising a silicon nitride layer on the side surface of the second die and a silicon oxide layer on the silicon nitride layer.

32. The bonded structure of claim 31 , wherein the first inorganic dielectric material comprises multiple layers, each layer comprising a silicon-containing inorganic dielectric material.

33. The bonded structure of claim 32 , wherein the multiple layers comprise a first layer disposed on the side surface of the first die and a second layer disposed on the first layer, the first layer comprising silicon nitride and the second layer comprising silicon oxide.

34. The bonded structure of claim 31 , wherein each of the first and second dies has a thickness less than 20 microns.

35. The bonded structure of claim 31 , wherein the first die comprises a processor die, and the second die comprises a memory die.

36. A bonded structure, comprising:

a silicon die having outer side surfaces;

a first die layer comprising:

a first surface opposite a second surface and outer side surfaces between the first and second surfaces, wherein the first surface is coupled to the silicon die and the second surface comprises a first non-conductive region and a first conductive region;

a first integrated device die;

a second die laterally spaced apart from the first integrated device die; and

a first dielectric protective material comprising a first inorganic insulating material, wherein the first dielectric protective material is disposed on side surfaces of the first integrated device die and the second die, and the first dielectric protective material completely fills a space between the first integrated device die and the second die; and

a second die layer comprising:

a third surface opposite a fourth surface and outer side surfaces between the third and fourth surfaces, wherein the third surface comprises a second non-conductive region directly bonded to the first non-conductive region and a second conductive region directly bonded to the first conductive region;

a third integrated device die; and

a second dielectric protective material comprising a second inorganic insulating material, wherein the second dielectric protective material is disposed on side surfaces of the third integrated device die, and

wherein the outer side surfaces of the silicon die, the first die layer, and the second die layer are aligned.

37. The bonded structure of claim 36 , wherein the first dielectric protective material comprises silicon oxide.

38. The bonded structure of claim 36 , wherein the second dielectric protective material comprises silicon oxide.

39. The bonded structure of claim 36 , wherein the second die is an integrated device die.

40. The bonded structure of claim 36 , wherein the first surface of the first die layer is directly bonded to the silicon die.

41. The bonded structure of claim 36 , wherein the first non-conductive region and the first conductive region of the first die layer are on the first integrated device die.

42. The bonded structure of claim 36 , wherein the third integrated device die comprises a through-substrate via electrically coupled with the second conductive region.

43. The bonded structure of claim 42 , further comprising a redistribution layer between the through-substrate via and the second conductive region.

44. The bonded structure of claim 36 , wherein an active surface of the third integrated device die is at the third surface of the second die layer.

45. The bonded structure of claim 36 , wherein the first dielectric protective material and the second dielectric protective material define the outer side surfaces of the first die layer and the second die layer, respectively.

46. The bonded structure of claim 1 , wherein the first die layer comprises a dielectric bonding layer that defines the first surface and wherein the dielectric bonding layer is in direct contact with the carrier.

47. The bonded structure of claim 1 , wherein the second integrated device die comprises active circuitry, a via, and opposing front and back surfaces, wherein the active circuitry is closer to the front surface than the back surface, wherein the back surface faces the first die layer and the front surface faces away from the first die layer.

48. The bonded structure of claim 15 , wherein the active side faces away from the second die layer.

49. The bonded structure of claim 21 , wherein the first die comprises active circuitry that is closer to the first surface than the second surface.

50. The bonded structure of claim 21 , wherein the conductive material is directly connected to the TSV.

51. The bonded structure of claim 31 , wherein the first die comprises active circuitry and a via, wherein the active circuitry is closer to the second surface than the first surface.

52. The bonded structure of claim 36 , wherein the third integrated device die comprises active circuitry and a via, wherein the active circuitry is closer to the fourth surface of the first die layer than the third surface.

53. The bonded structure of claim 52 , wherein the via is electrically connected to the first conductive region.