Stacked dies and methods for forming bonded structures
In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
1. A method for forming a bonded structure, the method comprising:
directly bonding a first singulated integrated device die to a carrier without an intervening adhesive such that respective bonding surfaces of the first singulated integrated device die and the carrier are in direct contact;
after directly bonding, thinning the first integrated device die; and
providing a protective material comprising a first layer on an exposed surface of the first integrated device die.
2. The method of claim 1 , further comprising removing at least a portion of the first layer.
3. The method of claim 2 , wherein the first layer has a coefficient of thermal expansion that is within 15 ppm/° C. of a coefficient of thermal expansion of the first integrated device.
4. The method of claim 2 , wherein the first layer comprises a silicon-based dielectric or a polymer.
5. The method of claim 4 , wherein the first layer comprises a polymer, and wherein the polymer has a glass transition temperature greater than 250° C.
6. The method of claim 4 , wherein the first layer comprises a polymer, and wherein the polymer comprises a plurality of filler particles therein.
7. The method of claim 1 , further comprising removing a portion of a backside of the first integrated device die to expose a back surface of the first integrated device die.
8. The method of claim 1 , further comprising providing a second layer on the first layer and removing at least a portion of the second layer.
9. The method of claim 2 , further comprising planarizing a remaining portion of the first layer which remains over the first integrated device die.
10. The method of claim 1 , further comprising providing the first layer on an exposed surface of a third integrated device die, the third integrated device die positioned laterally adjacent the first integrated device die.
11. The method of claim 8 , further comprising providing a third layer over the second layer.
12. A method for forming a bonded structure, the method comprising:
mounting a first singulated integrated device die to a carrier;
after mounting, thinning the first integrated device die; and
providing a protective material comprising a first layer on an exposed surface of the first integrated device die;
removing at least a portion of the first layer; and
providing an electrical interconnect exposed through at least the exposed surface of the first integrated device die.
13. The method of claim 12 , wherein providing the first layer comprises depositing the first layer around the electrical interconnect.
14. The method of claim 12 , wherein providing the electrical interconnect comprises forming the electrical interconnect after removing the at least a portion of the first layer.
15. The method of claim 12 , wherein mounting the first singulated integrated device die to the carrier comprises directly bonding the first singulated integrated device die to the carrier such that respective bonding surfaces of the first singulated integrated device die and the carrier are in direct contact.
16. A method for forming a bonded structure, the method comprising:
mounting a first singulated integrated device die to a carrier;
after mounting, thinning the first integrated device die; and
providing a protective material comprising a first layer on an exposed surface of the first integrated device die,
wherein providing the protective material comprises depositing the first layer to a thickness no less than a thickness of the first integrated device die, the thickness of the first integrated device die defined between a back surface and a front surface of the first integrated device die.
17. The method of claim 16 , wherein mounting the first singulated integrated device die to the carrier comprises directly bonding the first singulated integrated device die to the carrier such that respective bonding surfaces of the first singulated integrated device die and the carrier are in direct contact.
18. A bonded structure comprising:
a carrier;
a first integrated device die having a lower surface directly bonded to an upper surface of the carrier without an intervening adhesive such that the lower surface of the first integrated device die and the upper surface of the carrier are in direct contact, the first integrated device die comprising an upper surface opposite the lower surface and a side surface between the upper and lower surfaces of the first integrated device die;
a second integrated device die directly bonded to the upper surface of the first integrated device die; and
a protective material comprising a first layer having a first portion disposed on the side surface of the first integrated device die.
19. The structure of claim 18 , wherein a second portion of the first layer is disposed on the upper surface of the first integrated device die between the first and second integrated device dies.
20. The structure of claim 18 , wherein the first layer has a coefficient of thermal expansion that is within 10 ppm/° C. of a coefficient of thermal expansion of the first integrated device die.
21. The structure of claim 18 , wherein the protective material comprises a second filler layer disposed over the first portion of the first layer on the side surface of the first integrated device die.
22. The structure of claim 21 , wherein the protective material comprises a third layer having a first portion disposed over the second portion of the first layer and a second portion disposed over the second filler layer.
23. The structure of claim 18 , wherein a Young's modulus of the first layer is in a range of 20 GPa to 200 GPa.
24. The structure of claim 18 , wherein the first layer is harder than a bulk semiconductor material of the first integrated device die.
25. A method for forming a bonded structure, the method comprising:
directly bonding a first integrated device die to a carrier without an intervening adhesive such that respective bonding surfaces of the first integrated device die and the carrier are in direct contact; and
after directly bonding, providing a protective material comprising a first layer on a surface of the first integrated device die; and
planarizing at least a portion of the first layer to remove a portion of the first integrated device die.
26. The method of claim 25 , further comprising removing a portion of a backside of the first integrated device die to expose a back surface of the first integrated device die.
27. The method of claim 25 , wherein providing the first layer comprises depositing the first layer to a thickness no less than a thickness of the first integrated device die, the thickness of the first integrated device die defined between a back surface and a front surface of the first integrated device die.
28. The method of claim 25 , further comprising providing a second layer on the first layer and removing at least a portion of the second layer.
29. A method for forming a bonded structure, the method comprising:
mounting a first integrated device die to a carrier; and
after mounting, providing a protective material comprising a first layer on a surface of the first integrated device die; and
planarizing at least a portion of the first layer to remove a portion of the first integrated device die, wherein the first layer has a coefficient of thermal expansion that is within 10 ppm/° C. of a coefficient of thermal expansion of the first integrated device die.
30. The method of claim 29 , wherein mounting the first integrated device die to the carrier comprises directly bonding the first integrated device die to the carrier such that respective bonding surfaces of the first integrated device die and the carrier are in direct contact.