IP Library Granted Patent US 12,316,257
Granted Patent B2
US 12,316,257 · App. 18/159,449 · Granted May 27, 2025

Systems and methods for an interlocking feature on a power module

Inventor: Edward Choi (Lake Orion, MI)
Assignee: BorgWarner US Technologies LLC
H02P27/06B60L3/003B60L15/007B60L15/08B60L50/40B60L50/51B60L50/60B60L50/64B60L53/20B60L53/22B60L53/62B60R16/02G01R15/20G06F1/08G06F13/4004H01L21/4882H01L23/15H01L23/3672H01L23/3675H01L23/3735H01L23/4006H01L23/467H01L23/473H01L23/49562H01L23/5383H01L24/32H01L24/33H01L25/072H01L25/50H02J7/0063H02M1/0009H02M1/0054H02M1/08H02M1/084H02M1/088H02M1/123H02M1/32H02M1/322H02M1/327H02M1/4258H02M1/44H02M3/33523H02M7/003H02M7/537H02M7/5387H02M7/53871H02M7/53875H02M7/5395H02P27/08H02P27/085H02P29/024H02P29/027H02P29/68H05K1/145H05K1/181H05K1/182H05K5/0247H05K7/20154H05K7/2039H05K7/2049H05K7/20854H05K7/209H05K7/20927H10D64/018B60L15/20B60L2210/30B60L2210/40B60L2210/42B60L2210/44B60L2240/36G06F2213/40H01L2023/405H01L2023/4087H01L2224/32225H01L2224/32245H01L2224/33181H02J2207/20H02P2207/05H03K19/20H05K2201/042H05K2201/10166
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,316,257
App. No.
18/159,449
Granted
May 27, 2025
Kind
B2
Abstract

A system includes a power module, wherein the power module includes an interlocking feature on a first surface of the power module; and at least one heat sink, wherein the surface of the at least one heat sink includes a layer of thermal interface material.

Claims (29)

1. A system comprising:

a power module, wherein the power module includes a first interlocking feature on a first surface of the power module and a second interlocking feature on a second surface of the power module, wherein the first surface is opposite of the second surface;

a first heat sink, wherein the first heat sink includes a surface including a first layer of thermal interface material, wherein the first interlocking feature mates with the surface of the first heat sink to form a first gap between the first surface and the surface of the first heat sink; and

a second heat sink, wherein the second heat sink includes a surface including second layer of thermal interface material, wherein the second interlocking feature of the second surface mates with the surface of the second heat sink to form a second gap between the second surface and the surface of the second heat sink.

2. The system of claim 1 , wherein the second surface is separated from the first surface by a width of the power module.

3. The system of claim 1 , wherein the first interlocking feature is a protruding interlocking feature.

4. The system of claim 1 , wherein the surface of the first heat sink is a flat surface.

5. The system of claim 1 , wherein the first layer of thermal interface material includes one or more of thermal tapes, gels, thermal epoxies, solders, greases, gap-filled pads, or phase change materials.

6. The system of claim 1 , wherein the first surface and second surface include a copper layer.

7. The system of claim 1 , wherein a portion of the surface of the first heat sink located outwardly from where the first interlocking feature mates with the surface of the first heat sink includes the first layer of thermal interface material.

8. The system of claim 1 , wherein the first gap between the first surface of the power module and the surface of the first heat sink is filled with the first layer of thermal interface material.

9. The system of claim 1 , wherein the first layer of thermal interface material extends across an area of the first heat sink where the first interlocking feature on the power module does not mate with the surface of the first heat sink.

10. The system of claim 1 , wherein the first heat sink includes an inlet port or an outlet port.

11. A system comprising:

a power module, wherein the power module includes a first interlocking feature on a first surface of the power module; and

at least one heat sink, wherein the at least one heat sink includes a second interlocking feature on a surface of the at least one heat sink,

wherein the first interlocking feature of the first surface of the power module mates with the second interlocking feature on the surface of the at least one heat sink,

wherein the first interlocking feature includes a height greater than a depth of the second interlocking feature,

wherein the surface of the at least one heat sink includes a first portion located interior to the second interlocking feature and a second portion located exterior to the second interlocking feature, and

wherein the first portion and second portion of the surface of the at least one heat sink includes a layer of thermal interface material.

12. The system of claim 11 , wherein the power module includes a third interlocking feature on a second surface of the power module, wherein the second surface is separated from the first surface by a width of the power module.

13. The system of claim 12 , wherein the first interlocking feature on the first surface mates with the second interlocking feature on the surface of the at least one heat sink to form a gap between the first surface of the power module and the surface of the at least one heat sink.

14. The system of claim 13 , wherein the gap between the first surface of the power module and the surface of the at least one heat sink is filled with thermal interface material.

15. The system of claim 12 , wherein the first surface and second surface include a copper layer.

16. The system of claim 11 , wherein the first interlocking feature is a protruding interlocking feature.

17. The system of claim 11 , wherein the second interlocking feature is a recessed interlocking feature.

18. The system of claim 17 , wherein the recessed interlocking feature is a blind cavity.

19. The system of claim 11 , wherein the thermal interface material extends across an area of the surface of the at least one heat sink where the first interlocking feature on the power module does not mate with the second interlocking feature on the at least one heat sink.

20. The system of claim 11 , wherein the at least one heat sink includes an inlet port or an outlet port.

Assignments (2)
CHANGE OF NAME Recorded Sep 18, 2024
From: DELPHI TECHNOLOGIES IP LIMITED
To: BORGWARNER US TECHNOLOGIES LLC
Reel/Frame 068987/0367 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 7, 2023
From: CHOI, EDWARD
To: DELPHI TECHNOLOGIES IP LIMITED
Reel/Frame 062619/0129 →
Continuity (5)
Provisional Application 63377486 · Sep 28, 2022
Provisional Application 63377501 · Sep 28, 2022
Provisional Application 63377512 · Sep 28, 2022
Provisional Application 63378601 · Oct 6, 2022
Related Publication 20240107718A1 · Mar 28, 2024
References Cited (239)
US 4054828A · Conzelmann et al. · 1977 [cited by applicant]
US 4128801A · Gansert et al. · 1978 [cited by applicant]
US 4564771A · Flohrs · 1986 [cited by applicant]
US 4618875A · Flohrs · 1986 [cited by applicant]
US 4716304A · Fiebig et al. · 1987 [cited by applicant]
US 5068703A · Conzelmann et al. · 1991 [cited by applicant]
US 5432371A · Denner et al. · 1995 [cited by applicant]
US 5559661A · Meinders · 1996 [cited by applicant]
US 5654863A · Davies · 1997 [cited by applicant]
US 5764007A · Jones · 1998 [cited by applicant]
US 5841312A · Mindl et al. · 1998 [cited by applicant]
US 6028470A · Michel et al. · 2000 [cited by applicant]
US 6163138A · Kohl et al. · 2000 [cited by applicant]
US 6351173B1 · Ovens et al. · 2002 [cited by applicant]
US 6426857B1 · Doster et al. · 2002 [cited by applicant]
US 6597556B1 · Michel et al. · 2003 [cited by applicant]
US 6757170B2 · Lee · 2004 [cited by examiner]
US 6812553B2 · Gerbsch et al. · 2004 [cited by applicant]
US 6943293B1 · Jeter et al. · 2005 [cited by applicant]
US 7095098B2 · Gerbsch et al. · 2006 [cited by applicant]
US 7229855B2 · Murphy · 2007 [cited by applicant]
US 7295433B2 · Taylor et al. · 2007 [cited by applicant]
US 7459954B2 · Kuehner et al. · 2008 [cited by applicant]
US 7538425B2 · Myers et al. · 2009 [cited by applicant]
US 7551439B2 · Peugh et al. · 2009 [cited by applicant]
US 7616047B2 · Rees et al. · 2009 [cited by applicant]
US 7679182B2 · Yoshinari · 2010 [cited by examiner]
US 7724046B2 · Wendt et al. · 2010 [cited by applicant]
US 7750720B2 · Dittrich · 2010 [cited by applicant]
US 9088159B2 · Peuser · 2015 [cited by applicant]
US 9275915B2 · Heinisch et al. · 2016 [cited by applicant]
US 9373970B2 · Feuerstack et al. · 2016 [cited by applicant]
US 9431932B2 · Schmidt et al. · 2016 [cited by applicant]
US 9515584B2 · Koller et al. · 2016 [cited by applicant]
US 9548675B2 · Schoenknecht · 2017 [cited by applicant]
US 9806607B2 · Ranmuthu et al. · 2017 [cited by applicant]
US 9843320B2 · Richter et al. · 2017 [cited by applicant]
US 9871444B2 · Ni et al. · 2018 [cited by applicant]
US 9882490B2 · Veeramreddi et al. · 2018 [cited by applicant]
US 10111285B2 · Shi et al. · 2018 [cited by applicant]
US 10116300B2 · Blasco et al. · 2018 [cited by applicant]
US 10204872B2 · Kobayashi · 2019 [cited by examiner]
US 10232718B2 · Trunk et al. · 2019 [cited by applicant]
US 10270354B1 · Lu et al. · 2019 [cited by applicant]
US 10291225B2 · Li et al. · 2019 [cited by applicant]
US 10525847B2 · Strobel et al. · 2020 [cited by applicant]
US 10797579B2 · Hashim et al. · 2020 [cited by applicant]
US 10924001B2 · Li et al. · 2021 [cited by applicant]
US 11082052B2 · Jang et al. · 2021 [cited by applicant]
US 11108389B2 · Li et al. · 2021 [cited by applicant]
US 11342911B2 · Lee et al. · 2022 [cited by applicant]
US 11838011B2 · Li et al. · 2023 [cited by applicant]
US 11843320B2 · Sivakumar et al. · 2023 [cited by applicant]
US 11848426B2 · Zhang et al. · 2023 [cited by applicant]
US 11851038B2 · Solanki et al. · 2023 [cited by applicant]
US 11855522B2 · Rudolph et al. · 2023 [cited by applicant]
US 11855630B2 · Dake et al. · 2023 [cited by applicant]
US 11870338B1 · Narayanasamy · 2024 [cited by applicant]
US 11872997B2 · Hoos et al. · 2024 [cited by applicant]
US 11881859B2 · Gupta et al. · 2024 [cited by applicant]
US 11888391B2 · Balasubramanian et al. · 2024 [cited by applicant]
US 11888393B2 · Venkateswaran et al. · 2024 [cited by applicant]
US 11901803B2 · Ruck et al. · 2024 [cited by applicant]
US 11901881B1 · Narayanasamy · 2024 [cited by applicant]
US 11909319B2 · Esteghlal et al. · 2024 [cited by applicant]
US 11916426B2 · Oner et al. · 2024 [cited by applicant]
US 11923762B2 · Sethumadhavan et al. · 2024 [cited by applicant]
US 11923764B1 · Zhang · 2024 [cited by applicant]
US 11923799B2 · Ojha et al. · 2024 [cited by applicant]
US 11925119B2 · Male et al. · 2024 [cited by applicant]
US 11927624B2 · Patel et al. · 2024 [cited by applicant]
US 11938838B2 · Simonis et al. · 2024 [cited by applicant]
US 11942927B2 · Purcarea et al. · 2024 [cited by applicant]
US 11942934B2 · Ritter · 2024 [cited by applicant]
US 11945331B2 · Blemberg et al. · 2024 [cited by applicant]
US 11945522B2 · Matsumura et al. · 2024 [cited by applicant]
US 11949320B2 · Jaladanki et al. · 2024 [cited by applicant]
US 11949333B2 · Pahkala et al. · 2024 [cited by applicant]
US 11955896B2 · Liu et al. · 2024 [cited by applicant]
US 11955953B2 · Sinn et al. · 2024 [cited by applicant]
US 11955964B2 · Agarwal et al. · 2024 [cited by applicant]
US 11962234B2 · Narayanasamy et al. · 2024 [cited by applicant]
US 11962291B2 · Oberdieck et al. · 2024 [cited by applicant]
US 11964587B2 · Yukawa · 2024 [cited by applicant]
US 11970076B2 · Sarfert et al. · 2024 [cited by applicant]
US 11977404B2 · Chandrasekaran · 2024 [cited by applicant]
US 11984802B2 · Merkin et al. · 2024 [cited by applicant]
US 11984876B2 · Neidorff et al. · 2024 [cited by applicant]
US 11990776B2 · Dulle · 2024 [cited by applicant]
US 11990777B2 · Woll et al. · 2024 [cited by applicant]
US 11996686B2 · Chan et al. · 2024 [cited by applicant]
US 11996699B2 · Vasconcelos Araujo et al. · 2024 [cited by applicant]
US 11996714B2 · El Markhi et al. · 2024 [cited by applicant]
US 11996715B2 · Nandi et al. · 2024 [cited by applicant]
US 11996762B2 · Hembach et al. · 2024 [cited by applicant]
US 11996830B2 · Murthy et al. · 2024 [cited by applicant]
US 11996847B1 · Kazama et al. · 2024 [cited by applicant]
US 12003191B2 · Chaudhary et al. · 2024 [cited by applicant]
US 12003229B2 · Kaya et al. · 2024 [cited by applicant]
US 12003237B2 · Waters · 2024 [cited by applicant]
US 12008847B2 · Braun et al. · 2024 [cited by applicant]
US 12009679B2 · Gottwald et al. · 2024 [cited by applicant]
US 12012057B2 · Schneider et al. · 2024 [cited by applicant]
US 12015342B2 · Kienzler et al. · 2024 [cited by applicant]
US 12019112B2 · Jarmolowitz et al. · 2024 [cited by applicant]
US 12021517B2 · S et al. · 2024 [cited by applicant]
US 20040042178A1 · Gektin · 2004 [cited by examiner]
US 20120287582A1 · Vinciarelli et al. · 2012 [cited by applicant]
US 20170331469A1 · Kilb et al. · 2017 [cited by applicant]
US 20200195121A1 · Keskar et al. · 2020 [cited by applicant]
US 20210005711A1 · Martinez-Limia et al. · 2021 [cited by applicant]
US 20220052610A1 · Plum · 2022 [cited by applicant]
US 20220294441A1 · Purcarea et al. · 2022 [cited by applicant]
US 20230010616A1 · Gschwantner et al. · 2023 [cited by applicant]
US 20230061922A1 · Ritter · 2023 [cited by applicant]
US 20230082076A1 · Strache et al. · 2023 [cited by applicant]
US 20230126070A1 · Oberdieck et al. · 2023 [cited by applicant]
US 20230179198A1 · Winkler · 2023 [cited by applicant]
US 20230231210A1 · Joos et al. · 2023 [cited by applicant]
US 20230231400A1 · Oberdieck et al. · 2023 [cited by applicant]
US 20230231496A1 · Syed et al. · 2023 [cited by applicant]
US 20230238808A1 · Swoboda et al. · 2023 [cited by applicant]
US 20230268826A1 · Yan et al. · 2023 [cited by applicant]
US 20230335509A1 · Poddar · 2023 [cited by applicant]
US 20230365086A1 · Schumacher et al. · 2023 [cited by applicant]
US 20230370062A1 · Wolf · 2023 [cited by applicant]
US 20230378022A1 · Kim et al. · 2023 [cited by applicant]
US 20230386963A1 · Kim et al. · 2023 [cited by applicant]
US 20230402930A1 · Corry et al. · 2023 [cited by applicant]
US 20230420968A1 · Oner et al. · 2023 [cited by applicant]
US 20230421049A1 · Neidorff · 2023 [cited by applicant]
US 20240006869A1 · Kim et al. · 2024 [cited by applicant]
US 20240006899A1 · Wernerus · 2024 [cited by applicant]
US 20240006993A1 · Barjati et al. · 2024 [cited by applicant]
US 20240022187A1 · Fassnacht · 2024 [cited by applicant]
US 20240022240A1 · Balaz · 2024 [cited by applicant]
US 20240022244A1 · S et al. · 2024 [cited by applicant]
US 20240030730A1 · Wernerus · 2024 [cited by applicant]
US 20240039062A1 · Wernerus · 2024 [cited by applicant]
US 20240039402A1 · Bafna et al. · 2024 [cited by applicant]
US 20240039406A1 · Chen et al. · 2024 [cited by applicant]
US 20240048048A1 · Zhang · 2024 [cited by applicant]
US 20240055488A1 · Lee et al. · 2024 [cited by applicant]
US 20240067116A1 · Qiu · 2024 [cited by applicant]
US 20240072675A1 · Formenti et al. · 2024 [cited by applicant]
US 20240072817A1 · K et al. · 2024 [cited by applicant]
US 20240077899A1 · Chitnis et al. · 2024 [cited by applicant]
US 20240078204A1 · Roehrle et al. · 2024 [cited by applicant]
US 20240079950A1 · Narayanasamy · 2024 [cited by applicant]
US 20240079958A1 · Kumar et al. · 2024 [cited by applicant]
US 20240080028A1 · Dake et al. · 2024 [cited by applicant]
US 20240088647A1 · Ramadass et al. · 2024 [cited by applicant]
US 20240088896A1 · Bilhan et al. · 2024 [cited by applicant]
US 20240097437A1 · Goyal et al. · 2024 [cited by applicant]
US 20240097459A1 · Swoboda et al. · 2024 [cited by applicant]
US 20240105276A1 · Duryea · 2024 [cited by applicant]
US 20240106248A1 · Woll et al. · 2024 [cited by applicant]
US 20240106435A1 · Zhang et al. · 2024 [cited by applicant]
US 20240113517A1 · Sriraj et al. · 2024 [cited by applicant]
US 20240113611A1 · Kaufmann et al. · 2024 [cited by applicant]
US 20240113620A1 · Ranmuthu et al. · 2024 [cited by applicant]
US 20240113624A1 · Southard et al. · 2024 [cited by applicant]
US 20240120558A1 · Zhang et al. · 2024 [cited by applicant]
US 20240120765A1 · Oner et al. · 2024 [cited by applicant]
US 20240120962A1 · Miriyala et al. · 2024 [cited by applicant]
US 20240128851A1 · Ruck et al. · 2024 [cited by applicant]
US 20240128859A1 · Chen · 2024 [cited by applicant]
US 20240128867A1 · Wang et al. · 2024 [cited by applicant]
US 20240146177A1 · Mehdi et al. · 2024 [cited by applicant]
US 20240146306A1 · Ramkaj et al. · 2024 [cited by applicant]
US 20240149734A1 · Eisenlauer · 2024 [cited by applicant]
US 20240162723A1 · Zipf et al. · 2024 [cited by applicant]
US 20240178756A1 · El-Markhi et al. · 2024 [cited by applicant]
US 20240178824A1 · Kazama et al. · 2024 [cited by applicant]
US 20240186803A1 · Krieg et al. · 2024 [cited by applicant]
US 20240198937A1 · Benqassmi et al. · 2024 [cited by applicant]
US 20240198938A1 · Carlos et al. · 2024 [cited by applicant]
US 20240204540A1 · Majmunovic et al. · 2024 [cited by applicant]
US 20240204541A1 · Majmunovic et al. · 2024 [cited by applicant]
US 20240204671A1 · Liu et al. · 2024 [cited by applicant]
US 20240204765A1 · Dake · 2024 [cited by applicant]
US 20240213874A1 · Junnarkar et al. · 2024 [cited by applicant]
US 20240213971A1 · Lee · 2024 [cited by applicant]
US 20240213975A1 · Narayanasamy · 2024 [cited by applicant]
US 20240213981A1 · Agarwal et al. · 2024 [cited by applicant]
EP 3751602A1 · 2020 [cited by examiner]
WO 2007093598A1 · 2007 [cited by applicant]
WO 2019034505A1 · 2019 [cited by applicant]
WO 2020156820A1 · 2020 [cited by applicant]
WO 2020239797A1 · 2020 [cited by applicant]
WO 2021110405A1 · 2021 [cited by applicant]
WO 2021213728A1 · 2021 [cited by applicant]
WO 2022012943A1 · 2022 [cited by applicant]
WO 2022229149A1 · 2022 [cited by applicant]
WO 2023006491A1 · 2023 [cited by applicant]
WO 2023046607A1 · 2023 [cited by applicant]
WO 2023094053A1 · 2023 [cited by applicant]
WO 2023110991A1 · 2023 [cited by applicant]
WO 2023147907A1 · 2023 [cited by applicant]
WO 2023151850A1 · 2023 [cited by applicant]
WO 2023227278A1 · 2023 [cited by applicant]
WO 2023237248A1 · 2023 [cited by applicant]
WO 2024006181A2 · 2024 [cited by applicant]
WO 2024012743A1 · 2024 [cited by applicant]
WO 2024012744A1 · 2024 [cited by applicant]
WO 2024022219A1 · 2024 [cited by applicant]
WO 2024041776A1 · 2024 [cited by applicant]
WO 2024046614A1 · 2024 [cited by applicant]
WO 2024049730A1 · 2024 [cited by applicant]
WO 2024049884A1 · 2024 [cited by applicant]
WO 2024049909A1 · 2024 [cited by applicant]
WO 2024056388A1 · 2024 [cited by applicant]
WO 2024068065A1 · 2024 [cited by applicant]
WO 2024068076A1 · 2024 [cited by applicant]
WO 2024068113A1 · 2024 [cited by applicant]
WO 2024068115A1 · 2024 [cited by applicant]
WO 2024083391A1 · 2024 [cited by applicant]
WO 2024093384A1 · 2024 [cited by applicant]
WO 2024104970A1 · 2024 [cited by applicant]
WO 2024108401A1 · 2024 [cited by applicant]
WO 2024110106A1 · 2024 [cited by applicant]
WO 2024110265A1 · 2024 [cited by applicant]
WO 2024110297A1 · 2024 [cited by applicant]
WO 2024114978A1 · 2024 [cited by applicant]
WO 2024114979A1 · 2024 [cited by applicant]
WO 2024114980A1 · 2024 [cited by applicant]
WO 2024128286A1 · 2024 [cited by applicant]
WO 2024132249A1 · 2024 [cited by applicant]
EP 3751602 A1, English machine translation (Year: 2020). [cited by examiner]
Balogh, L., “Fundamentals of MOSFET and IGBT Gate Driver Circuits,” Texas Instruments Application Report, SLUA618-Mar. 2017, Retrieved from internet URL: https://ghioni.faculty.polimi.it/pel/readmat/gate-drive.pdf, 65 p… [cited by applicant]
Baranwal, S., “Common-mode transient immunity for isolated gate drivers,” Analog Applications Journal, Texas Instruments (2015), Retrieved from internet URL: https://www.ti.com/lit/an/slyt648/slyt648.pdf?ts=170205233606… [cited by applicant]
Boomer, K. and Ahmad H., “Performance Evaluation of an Automotive-Grade, High-Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range,” NASA Electronic Parts and Packaging Program No. GRC-E-DAA-TN25… [cited by applicant]
Ke, X, et al., “A 3-to-40V 10-to-30MHz Automotive-Use GaN Driver with Active BST Balancing and VSW Dual-Edge Dead-Time Modulation Achieving 8.3% Efficiency Improvement and 3.4ns Constant Propagation Delay,” 2016 IEEE In… [cited by applicant]
Sridhar, N., “Impact of an Isolated Gate Driver,” Texas Instruments: Dallas, Texas (2019), Retrieved from Internet URL: https://www.ti.com/lit/wp/slyy140a/slyy140a.pdf, 08 pages. [cited by applicant]
Sridhar, N., “Power Electronics in Motor Drives: Where is it?” Texas Instruments (2015), Retrieved from Internet URL: https://www.ti.com/lit/wp/slyy078a/slyy078a.pdf, 09 pages. [cited by applicant]
Sridhar, N., “Silicon Carbide Gate Drivers—a Disruptive Technology in Power Electronics,” Texas Instruments, Dallas, Texas (2019), Retrieved from Internet URL: https://www.ti.com/lit/wp/slyy139/slyy139.pdf, 07 pages. [cited by applicant]
Maniar, K., et al., “Addressing High-voltage Design Challenges With Reliable and Affordable Isolation Technologies,” 2024, pp. 1-12. Retrieved from internet URL: https://www.ti.com/lit/wp/slyy204c/slyy204c.pdf ts=171050… [cited by applicant]
“New products,” 5 Pages, Retrieved from internet URL:https://www.ti.com/product-category/new-products.html?%20releasePeriod=364#releasePeriod=90. [cited by applicant]
“Qualcomm and Bosch Showcase New Central Vehicle Computer for Digital Cockpit and Driver Assistance Functions at CES 2024,” 2024, 8 Pages. Retrieved from internet URL:https://www.qualcomm.com/news/releases/2024/01/qualc… [cited by applicant]