Asymmetric VREADK to reduce neighboring word line interference in a memory device
The memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines. The plurality of word lines include a selected word line, a pair of neighboring word lines that are immediately adjacent the selected word line, and a plurality of non-neighboring word lines that are not immediately adjacent the selected word line. Circuitry can perform a sensing operation on at least one memory cell in the selected word line. During the sensing operation, the circuitry is configured to apply a reference voltage to the selected word line, apply different first and second pass voltages to the neighboring word lines, and apply a third pass voltage that is different than the first and second pass voltages to the plurality of non-neighboring word lines. The circuitry is further configured to sense a threshold voltage of the at least one memory cell.
1. A method of operating a memory device, comprising the steps of:
preparing a memory block that includes a plurality of memory cells that are arranged in a plurality of word lines, the plurality of word lines including a selected word line, a pair of neighboring word lines that are located immediately adjacent to the selected word line, and a plurality of non-neighboring word lines that are not immediately adjacent to the selected word line;
applying a reference voltage to the selected word line;
applying different first and second pass voltages to the pair of neighboring word lines, and applying a third pass voltage that is different than the first and second pass voltages to the non-neighboring word lines in the memory block;
performing a sensing operation on at least one memory cell in the selected word line;
wherein the first pass voltage is a VREADK_P1 voltage and the second pass voltage is a VREADK_E1 voltage and wherein the VREADK_P1 voltage is less than the VREADK_E1 voltage; and
wherein the VREADK_P1 voltage is applied to the one of the neighboring word lines that was programmed prior to the programming of the selected word line and the VREAK_E1 voltage is applied to the one of the neighboring word lines that was in an erased condition during programming of the selected word line.
2. The method as set forth in claim 1 , wherein the sensing operation is a verify operation.
3. The method as set forth in claim 1 , wherein the sensing operation is a read operation.
4. The method as set forth in claim 1 , wherein a magnitude of the VREADK_P1 voltage is determined by a data state being sensed in the sensing operation.
5. The method as set forth in claim 4 , wherein the VREADK_P1 voltage is set at a first magnitude in response to the reference voltage being greater than a predetermined threshold and is set at a lesser second magnitude in response to the reference voltage being less than the predetermined threshold.
6. The method as set forth in claim 1 , further including the steps of:
performing a read operation on one of the neighboring word lines;
comparing a threshold voltage of at least one memory cell in one of the neighboring word lines to a predetermined threshold;
setting the VREADK_P1 voltage at a first magnitude in response to the threshold voltage of the at least one memory cell in the neighboring word line being greater than the predetermined threshold; and
setting the VREADK_P1 voltage at a lesser second magnitude in response to the threshold voltage of the at least one memory cell in the neighboring word line being less than the predetermined threshold.
7. A memory device, comprising:
a memory block that includes a plurality of memory cells that are arranged in a plurality of word lines, the plurality of word lines including a selected word line, a pair of neighboring word lines that are immediately adjacent the selected word line, and a plurality of non-neighboring word lines that are not immediately adjacent the selected word line;
circuitry that can perform a sensing operation on at least one memory cell in the selected word line; during the sensing operation, the circuitry being configured to;
apply a reference voltage to the selected word line,
apply different first and second pass voltages to the neighboring word lines, and apply a third pass voltage that is different than the first and second pass voltages to the plurality of non-neighboring word lines, and
sense a threshold voltage of the at least one memory cell;
wherein the first pass voltage is a VREADK_P1 voltage and the second pass voltage is a VREADK_E1 voltage, and wherein the VREADK_P1 voltage is less than the VREADK_E1 voltage; and
wherein the VREADK_P1 voltage is applied to the one of the neighboring word lines that was programmed prior to programming of the selected word line and the VREADK_E1 voltage is applied to the one of the neighboring word lines that was in an erased condition during programming of the selected word line.
8. The memory device as set forth in claim 7 , wherein the sensing operation is a verify operation.
9. The memory device as set forth in claim 7 , wherein the sensing operation is a read operation.
10. The memory device as set forth in claim 7 , wherein a magnitude of the VREADK_P1 voltage is determined by a data state being sensed in the sensing operation.
11. The memory device as set forth in claim 10 , wherein the VREADK_P1 voltage is set at a first magnitude in response to the reference voltage being greater than a predetermined threshold and is set at a lesser second magnitude in response to the reference voltage being less than the predetermined threshold.
12. The memory device as set forth in claim 7 , wherein the circuitry is further configured to:
perform a read operation on one of the neighboring word lines;
compare a threshold voltage of at least one memory cell in one of the neighboring word lines to a predetermined threshold; and
set the VREADK_P1 voltage at a first magnitude in response to the threshold voltage of the at least one memory cell in the neighboring word line being greater than the predetermined threshold; and
set the VREADK_P1 voltage at a lesser second magnitude in response to the threshold voltage of the at least one memory cell in the neighboring word line being less than the predetermined threshold.
13. An apparatus, comprising:
a memory block that includes a plurality of memory cells that are arranged in a plurality of word lines, the plurality of word lines including a selected word line, a pair of neighboring word lines that are immediately adjacent the selected word line, and a plurality of non-neighboring word lines that are not immediately adjacent the selected word line;
a sensing means for sensing a threshold voltage of at least one memory cell of the selected word line, the sensing means being configured to;
apply a reference voltage to the selected word line,
apply a first pass voltage to one of the neighboring word lines and apply a second pass voltage to the other of the neighboring word lines, the second pass voltage being different than the first pass voltage, and
discharge a sense node through a NAND string containing the at least one memory cell to be sensed to determine whether the at least one memory cell has a threshold voltage that is greater than the reference voltage;
wherein the first pass voltage is a VREADK_P1 voltage and the second pass voltage is a VREADK_E1 voltage and wherein the VREADK_P1 voltage is less than the VREADK_E1 voltage; and
wherein the VREADK_P1 voltage is applied to the one of the neighboring word lines that was programmed prior to programming of the selected word line and wherein the VREADK_E1 voltage is applied to the one of the neighboring word lines that was erased during programming of the selected word line.
14. The apparatus as set forth in claim 13 , wherein the word lines of the memory block are programmed in at least one of a normal order programming direction and a reverse order programming direction.