IP Library Granted Patent US 12,354,627
Granted Patent B2
US 12,354,627 · App. 18/229,785 · Granted Jul 8, 2025

Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials

Inventors: Quang Le (San Jose, CA); Xiaoyong Liu (San Jose, CA); Cherngye Hwang (San Jose, CA); Brian R. York (San Jose, CA); Son T. Le (San Jose, CA); Sharon Swee Ling Banh (San Jose, CA); Maki Maeda (Fujisawa, JP); Fan Tuo (Fujisawa, JP); Yu Tao (Fujisawa, JP); Hisashi Takano (Fujisawa, JP); Nam Hai Pham (Tokyo, JP)
Assignees: Western Digital Technologies, Inc.; Tokyo Institute of Technology
G11B5/314G11B5/1278G11B5/235G11B5/37G11B2005/0024
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Quick Facts
Patent No.
US 12,354,627
App. No.
18/229,785
Granted
Jul 8, 2025
Kind
B2
Abstract

The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

Claims (51)

1. A magnetic recording head, comprising:

a main pole disposed at a media facing surface (MFS);

a shield disposed at the MFS;

a non-magnetic layer disposed between the main pole and the shield, the non-magnetic layer being disposed at the MFS, wherein the non-magnetic layer is tapered in shape; and

a spin orbit torque (SOT) layer disposed over the non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS.

2. The magnetic recording head of claim 1 , wherein a ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1.

3. The magnetic recording head of claim 1 , wherein a length of the non-magnetic layer is substantially equal to a length of the SOT layer.

4. The magnetic recording head of claim 1 , wherein the SOT layer comprises undoped BiSb.

5. The magnetic recording head of claim 1 , wherein the SOT layer comprises doped BiSbX, where the dopant is less than about 10 at. %, and where X is a material selected from the group consisting of: B, N, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Ge, Y, Zr, Ru, Mo, Ag, Hf, Ta, W, and Ir.

6. The magnetic recording head of claim 1 , further comprising a spin blocking layer disposed between the shield and the non-magnetic layer, wherein the SOT layer is disposed on a trailing side facing surface of the non-magnetic layer.

7. The magnetic recording head of claim 1 , further comprising a spin blocking layer disposed between the main pole and the non-magnetic layer, wherein the SOT layer is disposed on a trailing side facing surface of the non- magnetic layer.

8. A magnetic recording device comprising the magnetic recording head of claim 1 .

9. The magnetic recording device of claim 8 , further comprising a control unit configured to cause a current to flow through the SOT layer, to cause a first spin current to flow from the SOT layer through the non-magnetic layer to the main pole, and to cause a second spin current to flow from the SOT layer through a second non-magnetic layer to the shield.

10. A magnetic recording head, comprising:

a main pole disposed at a media facing surface (MFS);

a first non-magnetic layer disposed over the main pole, the first non-magnetic layer being disposed at the MFS;

a second non-magnetic layer disposed over the first non-magnetic layer, the second non-magnetic layer being disposed at the MFS, wherein the first non-magnetic layer and the second non-magnetic layer are each individually tapered in shape;

a shield disposed over the second non-magnetic layer; and

a spin orbit torque (SOT) layer disposed over the first non-magnetic layer and the second non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS.

11. The magnetic recording head of claim 10 , wherein a ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1, and wherein the SOT layer comprises undoped BiSb or doped BiSbX, where the dopant is less than about 10 at. %, and where X is a material selected from the group consisting of: B, N, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Ge, Y, Zr, Ru, Mo, Ag, Hf, Ta, W, and Ir.

12. The magnetic recording head of claim 10 , further comprising a spin blocking layer disposed between the first non-magnetic layer and the second non- magnetic layer, the spin blocking layer being disposed at the MFS.

13. The magnetic recording head of claim 12 , the spin blocking layer comprises a material selected from the group consisting of: Ti, Ru, a bilayer of Ti with Ru, Pt, or Mn, a bilayer of Ru with Pt or Mn, and alloys thereof, AlOx, SiN, and MgO, where x is an integer greater than or equal to 1.

14. The magnetic recording head of claim 10 , wherein the first and second non-magnetic layers each individually comprises Cu or Al.

15. A magnetic recording device comprising the magnetic recording head of claim 10 .

16. A magnetic recording head, comprising:

a main pole disposed at a media facing surface (MFS);

a first non-magnetic layer disposed over the main pole, the first non-magnetic layer being disposed at the MFS;

a spin blocking layer disposed over the first non-magnetic layer;

a second non-magnetic layer disposed over the spin blocking layer, the second non-magnetic layer being disposed at the MFS, wherein the first non-magnetic layer and the second non-magnetic layer are each individually tapered in shape;

a trailing shield disposed over the second non-magnetic layer;

a first spin orbit torque (SOT) layer disposed under the first non-magnetic layer; and

a second SOT layer disposed over the second non-magnetic layer, wherein the first SOT layer and the second SOT layer are each individually recessed a distance of about 20 nm to about 100 nm from the MFS.

17. The magnetic recording head of claim 16 , wherein a ratio of a length of the first SOT layer to a thickness of the first SOT layer is greater than 1, wherein a ratio of a length of the second SOT layer to a thickness of the second SOT layer is greater than 1, and wherein the first SOT layer and the second SOT layer each individually comprises BiSb.

18. The magnetic recording head of claim 16 , wherein the first SOT layer is disposed on a main pole facing surface of the first non-magnetic layer, and wherein the second SOT layer is disposed on a trailing shield facing surface of the second non-magnetic layer.

19. The magnetic recording head of claim 16 , wherein the spin blocking layer extends between the first SOT layer and the second SOT layer.

20. A magnetic recording device comprising the magnetic recording head of claim 16 .

21. The magnetic recording device of claim 20 , further comprising a control unit configured to cause a first current to flow through the first SOT layer, to cause a first spin current to flow from the first SOT layer through the first non-magnetic layer to the main pole, to cause a second current to flow through the second SOT layer, and to cause a second spin current to flow from the second SOT layer through the second non- magnetic layer to the trailing shield.

22. A magnetic recording device comprising:

a magnetic recording head, comprising:

a main pole disposed at a media facing surface (MFS);

a shield disposed at the MFS;

a non-magnetic layer disposed between the main pole and the shield, the non-magnetic layer being disposed at the MFS; and

a spin orbit torque (SOT) layer disposed over the non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS; and

a control unit configured to cause a current to flow through the SOT layer, to cause a spin current to flow from the SOT layer through the non-magnetic layer to the main pole.

23. A magnetic recording device comprising:

a magnetic recording head, comprising:

a main pole disposed at a media facing surface (MFS);

a shield disposed at the MFS;

a non-magnetic layer disposed between the main pole and the shield, the non-magnetic layer being disposed at the MFS; and

a spin orbit torque (SOT) layer disposed over the non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS; and

a control unit configured to cause a current to flow through the SOT layer, to cause a spin current to flow from the SOT layer through the non-magnetic layer to the shield.

Assignments (4)
PATENT COLLATERAL AGREEMENT- A&R Recorded Nov 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 065656/0649 →
PATENT COLLATERAL AGREEMENT - DDTL Recorded Nov 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 065657/0158 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2023
From: LE, QUANG; LIU, XIAOYONG; HWANG, CHERNGYE; YORK, BRIAN R.; LE, SON T.; BANH, SHARON; MAEDA, MAKI; TUO, FAN; TAO, YU; TAKANO, HISASHI
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 065512/0349 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2023
From: PHAM, NAM HAI
To: TOKYO INSTITUTE OF TECHNOLOGY
Reel/Frame 065512/0353 →
Continuity (2)
Provisional Application 63523750 · Jun 28, 2023
Related Publication 20250006221A1 · Jan 2, 2025
References Cited (140)
US 5751521A · Gill · 1998 [cited by applicant]
US 6657823B2 · Kawato · 2003 [cited by applicant]
US 6667861B2 · Gill · 2003 [cited by applicant]
US 6680828B2 · Gill · 2004 [cited by applicant]
US 6906898B2 · Kawato · 2005 [cited by applicant]
US 7016160B2 · Mao et al. · 2006 [cited by applicant]
US 7242556B2 · Gill · 2007 [cited by applicant]
US 7298595B2 · Gill · 2007 [cited by applicant]
US 7436632B2 · Li et al. · 2008 [cited by applicant]
US 7643255B2 · Gill · 2010 [cited by applicant]
US 7697242B2 · Gill · 2010 [cited by applicant]
US 7881018B2 · Gill et al. · 2011 [cited by applicant]
US 8125746B2 · Dimitrov et al. · 2012 [cited by applicant]
US 8174799B2 · Hoshiya et al. · 2012 [cited by applicant]
US 8223464B2 · Yasui et al. · 2012 [cited by applicant]
US 8553346B2 · Braganca et al. · 2013 [cited by applicant]
US 8570677B2 · Braganca et al. · 2013 [cited by applicant]
US 8570689B2 · Sato et al. · 2013 [cited by applicant]
US 8654465B2 · Braganca et al. · 2014 [cited by applicant]
US 9472216B1 · Mauri et al. · 2016 [cited by applicant]
US 9806710B2 · Flatte · 2017 [cited by applicant]
US 9929210B2 · Lai et al. · 2018 [cited by applicant]
US 9947347B1 · Van Der Heijden et al. · 2018 [cited by applicant]
US 10014012B1 · Song et al. · 2018 [cited by applicant]
US 10127933B2 · Batra et al. · 2018 [cited by applicant]
US 10210888B1 · Li et al. · 2019 [cited by applicant]
US 10483457B1 · Lee et al. · 2019 [cited by applicant]
US 10490731B2 · Sasaki et al. · 2019 [cited by applicant]
US 10559318B1 · Chen et al. · 2020 [cited by examiner]
US 10580441B1 · Chen et al. · 2020 [cited by examiner]
US 10679650B2 · Bai et al. · 2020 [cited by examiner]
US 10714136B1 · Chen et al. · 2020 [cited by examiner]
US 10720570B2 · Le et al. · 2020 [cited by applicant]
US 10770104B1 · Chen et al. · 2020 [cited by examiner]
US 10777219B1 · Asif Bashir et al. · 2020 [cited by examiner]
US 10839831B1 · Nguyen et al. · 2020 [cited by applicant]
US 10867626B1 · Li et al. · 2020 [cited by applicant]
US 10891974B1 · Chembrolu et al. · 2021 [cited by examiner]
US 10891975B1 · Bai et al. · 2021 [cited by examiner]
US 10896690B1 · Bai et al. · 2021 [cited by examiner]
US 10991390B2 · Kobayashi · 2021 [cited by applicant]
US 11017801B1 · Chembrolu et al. · 2021 [cited by examiner]
US 11088200B1 · Xiao · 2021 [cited by applicant]
US 11094338B1 · Hwang et al. · 2021 [cited by applicant]
US 11100946B1 · Le et al. · 2021 [cited by applicant]
US 11222656B1 · Le et al. · 2022 [cited by applicant]
US 11227627B1 · Song et al. · 2022 [cited by examiner]
US 11437058B2 · Song et al. · 2022 [cited by applicant]
US 11495741B2 · York et al. · 2022 [cited by applicant]
US 11532323B1 · Le et al. · 2022 [cited by applicant]
US 20090161265A1 · Sugano et al. · 2009 [cited by applicant]
US 20110089940A1 · Carey et al. · 2011 [cited by applicant]
US 20140226239A1 · Mihajlovic et al. · 2014 [cited by applicant]
US 20140254252A1 · Guo · 2014 [cited by applicant]
US 20150041934A1 · Khvalkovskiy et al. · 2015 [cited by applicant]
US 20150287426A1 · Mihajlovic et al. · 2015 [cited by applicant]
US 20170077392A1 · Han et al. · 2017 [cited by applicant]
US 20170098545A1 · Woodruff · 2017 [cited by applicant]
US 20170221506A1 · Tan et al. · 2017 [cited by applicant]
US 20170271581A1 · Seong et al. · 2017 [cited by applicant]
US 20170288666A1 · Flatte · 2017 [cited by applicant]
US 20170365777A1 · Mihajlovic et al. · 2017 [cited by applicant]
US 20180166500A1 · Wang et al. · 2018 [cited by applicant]
US 20180358543A1 · Le et al. · 2018 [cited by applicant]
US 20180366172A1 · Wang et al. · 2018 [cited by applicant]
US 20190037703A1 · Wang et al. · 2019 [cited by applicant]
US 20190058113A1 · Ramaswamy et al. · 2019 [cited by applicant]
US 20190326353A1 · O'Brien et al. · 2019 [cited by applicant]
US 20190392881A1 · Rakshit et al. · 2019 [cited by applicant]
US 20200035910A1 · Li et al. · 2020 [cited by applicant]
US 20200098410A1 · Gosavi et al. · 2020 [cited by applicant]
US 20200152228A1 · Tang et al. · 2020 [cited by examiner]
US 20200176511A1 · Park et al. · 2020 [cited by applicant]
US 20200243603A1 · Lee et al. · 2020 [cited by applicant]
US 20200243752A1 · Sasaki · 2020 [cited by applicant]
US 20200279992A1 · Pham et al. · 2020 [cited by applicant]
US 20210056988A1 · Chen et al. · 2021 [cited by applicant]
US 20210249038A1 · Le et al. · 2021 [cited by applicant]
US 20210328134A1 · Guo et al. · 2021 [cited by applicant]
US 20210336127A1 · Le et al. · 2021 [cited by applicant]
US 20210351342A1 · Yui et al. · 2021 [cited by applicant]
US 20210367142A1 · Lee et al. · 2021 [cited by applicant]
US 20210408370A1 · York et al. · 2021 [cited by applicant]
US 20220005498A1 · Le et al. · 2022 [cited by applicant]
US 20220013138A1 · Hwang et al. · 2022 [cited by applicant]
US 20220029090A1 · Cho et al. · 2022 [cited by applicant]
US 20220044103A1 · Nguyen et al. · 2022 [cited by applicant]
US 20220068538A1 · Apalkov et al. · 2022 [cited by applicant]
US 20220069202A1 · Nguyen et al. · 2022 [cited by applicant]
US 20220310901A1 · Oguz et al. · 2022 [cited by applicant]
US 20230027086A1 · Le et al. · 2023 [cited by applicant]
US 20230047223A1 · Le et al. · 2023 [cited by applicant]
US 20230121375A1 · Le et al. · 2023 [cited by applicant]
US 20230197132A1 · Le et al. · 2023 [cited by applicant]
CN 111354392A · 2020 [cited by applicant]
JP 4934582B2 · 2012 [cited by applicant]
JP 2021034480A · 2021 [cited by applicant]
JP 2021057357A · 2021 [cited by applicant]
JP 2021128814A · 2021 [cited by applicant]
WO 2018231292A1 · 2018 [cited by applicant]
WO 2019054484A1 · 2019 [cited by applicant]
WO 2019125388A1 · 2019 [cited by applicant]
WO 2019159885A1 · 2019 [cited by applicant]
WO 2021221726A1 · 2021 [cited by applicant]
WO 2023022764A1 · 2023 [cited by applicant]
Berry et al. “Melting at dislocations and grain boundaries: A phase field crystal study,” Physical Review, vol. B 77, No. 224114, 2008, pp. 224114-1-224114-5, DOI: 10.1103/PhysRevB.77.224114. [cited by applicant]
Buffat et al. “Size effect on the melting temperature of gold particles,” Physical Review A, vol. 13, No. 6, Jun. 1976, pp. 2287-2298. [cited by applicant]
Cantwell et al. “Grain boundary complexions,” ScienceDirect, Acta Materialia, vol. 62, No. 152, 2014, pp. 1-48, http://dx.doi.org/10.1016/j.actamat.2013.07.037. [cited by applicant]
Chi et al. “The Spin Hall Effect of Bi—Sb Alloys Driven by Thermally Excited Dirac-like Electrons,” Oct. 28, 2019, ArXiv: 1910, 40 pages, https://arxiv.org/pdf/1910.12433.pdf. [cited by applicant]
Eustathopoulos “Wetting by Liquid Metals-Application in Materials Processing: The Contribution of the Grenoble Group,” Metals, 2015, vol. 5, No. 1, pp. 350-370, doi:10.3390/met5010350. [cited by applicant]
Fan et al. “Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure,” Nature Materials, vol. 13, Apr. 28, 2014, pp. 669-704, <<https://doi.org/10.1038/nmat39… [cited by applicant]
Frolov et al. “Structural phase transformations in metallic grain boundaries,” Nature Communications, 2013, vol. 4, No. 1899, pp. 1-7, DOI: 10.1038/ncomms2919. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2020/065156 mailed Mar. 14, 2021, 13 pages. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2020/066902 mailed Apr. 18, 2021, 12 pages. [cited by applicant]
Khang et al. “A conductive topological insulator with large spin Hall effect for ultralow power spin-orbit torque switching,” Nature Materials, vol. 17, pp. 808-813, Sep. 2018, pp. 808-813, https://doi.org/10.1038/s4156… [cited by applicant]
Kogtenkova et al. “Grain Boundary Complexions and Phase Transformations in Al- and Cu-Based Alloys,” Metals, 2019, vol. 9, No. 1, doi:10.3390/met9010010, 24 pages. [cited by applicant]
Roschewsky et al. “Spin-orbit torque and Nernst effect in Bi—Sb/Co heterostructures,” Physical Review, vol. B 99, No. 195103, 2019, pp. 195103-1-195103-5, DOI: 10.1103/PhysRevB.99.195103. [cited by applicant]
Roschewsky et al. “Spin-Orbit Torque and Nernst Effect in BiSb/ Co Heterostructures,” Center for Energy Efficient Electronics Science, University of California—Berkeley, 2018, 12 pages, https://e3s-center.berkeley.edu/w… [cited by applicant]
Shao “Spin-Orbit Torques in Topological Insultators,” UCLA Electronic Theses and Dissertations; 2015; 76 pages, https://escholarship.org/content/qt3ds9792s/qt3ds9792s.pdf?t=nys1b5&nosplash=32ac004cc5750a361e60ece735dd27… [cited by applicant]
Shirokura et al. “Origin of the Giant Spin Hall Effect in BlSb Topological Insulator,” ArXiv:1810; 27 pages, https://arxiv.org/ftp/arxiv/papers/1810/1810.10840.pdf, 2018. [cited by applicant]
Tanaka et al. “Thermodynamic Evaluation of Nano-Particle Binary Alloy Phase Diagrams,” 2001, Zeitschrift für Metallkunde, vol. 92, No. 11, pp. 1236-1241, http: //hdl.handle.net/11094/26514. [cited by applicant]
Walker et al. “Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si (111),” Physical Review Materials, vol. 3, 064201, Jun. 7, 2019, 8 pages. [cited by applicant]
Yao et al. “Influence of Crystal Orientation and Surface Termination on the Growth of BiSb thin films on GaAs Substrates,” Accepted Manuscript, Journal of Crystal Growth, 2019, 24 pages, doi: https://doi.org/10.1016/j.j… [cited by applicant]
U.S. Appl. No. 17/401,856, filed Aug. 13, 2021. [cited by applicant]
U.S. Appl. No. 17/405,954, filed Aug. 18, 2021. [cited by applicant]
Teague “X-ray and Mossbauer spectroscopy studies of the silicon-antimony and bismuth-antimony alloys,” 1971, Scholar's Mine, Doctoral Dissertations, University of Missouri-Rolla, 167 pages. [cited by applicant]
“A colossal breakthrough for topological spintronics,” Tokyo Institute of Technology, Jul. 31, 2018, 4 pages, <https://www.titech.ac.jp/english/news/2018/042001.html>. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2021/033912 mailed Jul. 25, 2021, 9 pages. [cited by applicant]
Lau et al. “Spin-orbit torque switching without an external field using interlayer exchange coupling,” Nature Nanotechnology, vol. 11, Sep. 2016, pp. 758-762, <https://doi.org/10.1038/nnano.2016.84>. [cited by applicant]
Liu “Spin-orbit Torque Driven Magnetization Switching for Non-volatile Memory and Beyond,” Carnegie Mellon University, May 2020, Thesis, 157 pages, <https://doi.org/10.1184/R1/11933571.v1>, <https://kilthub.cmu.edu/arti… [cited by applicant]
Han et al. “Self-Biased Differential Dual Spin Valve Readers for Future Magnetic Recording,” IEEE Transactions on Magnetics, vol. 48, No. 5, May 2012, pp. 1770-1776, 10.1109/TMAG.2011.2169946. [cited by applicant]
International Search Report and the Written Opinion for International Application No. PCT/US2021/033197 mailed Jul. 12, 2021, 9 pages. [cited by applicant]
Jabeur et al. “Study of spin transfer torque (STT) and spin orbit torque (SOT) magnetic tunnel junctions (MTJs) at advanced CMOS technology nodes,” Electrical and Electronics Engineering: An International Journal, (ELEL… [cited by applicant]
Yuan et al. “Readback Resolution of Differential Dual CPP Spin Valve Reader,” IEEE Transactions on Magnetics, vol. 46, No. 6, Jun. 2010, pp. 1667-1670, 10.1109/TMAG.2010.2045106. [cited by applicant]
Tuo Fan et al. “Ultrahigh Efficient Spin-Orbit Torque Magnetization Switching in All-Sputtered Topological Insulator—Ferromagnet Multilayer”, Jul. 5, 2020, <https://arxiv.org/ftp/arxiv/papers/2007/2007.02264.pdf. [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2022/027960 dated Sep. 5, 2022. [cited by applicant]
Zhang et al., “Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect”, NPJ Computational Materials, 2021, 167, pp. 1-7, (Year: 2021). [cited by applicant]
Demasius, Kai-Uwe, et al. “Enhanced spin-orbit torques by oxygen incorporation in tungsten films.” Nature communications 7.1 (2016): 1-7. [cited by applicant]
International Search Report and Written Opinion dated Nov. 16, 2022 for Application No. PCT/US2022/035654. [cited by applicant]
Manchon, A. et al. “Theory of nonequilibrium intrinsic spin torque in a single nanomagnet”, Phys. Rev. B, vol. 78, 212405, Dec. 2008. [cited by applicant]
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