Word line structure of three-dimensional memory device
A memory device includes a substrate, a stack over the substrate, and a gate line slit extending along a first direction and dividing the stack into two portions. The stack includes a connection portion that connects the two portions of the stack. The connection portion includes at least two sub-connection portions along a second direction perpendicular to the first direction. The gate line slit includes at least two portions along the first direction. Each sub-connection portion is between adjacent two portions of the gate line slit.
1. A memory device, comprising:
a substrate;
a stack comprising a first tier over the substrate and a second tier on the first tier, wherein each of the first tier and the second tier comprises gate material layers and insulating layers alternatingly arranged and extending along a first direction; and
a gate line slit extending along the first direction and dividing the stack into two portions,
wherein the stack comprises a connection portion that connects the two portions of the stack, the connection portion comprises at least two sub-connection portions along a second direction perpendicular to the first direction, the gate line slit comprises at least two portions along the first direction, and each sub-connection portion is between adjacent two portions of the gate line slit, a first sub-connection portion that connects the gate material layers of the first tier is different from a second sub-connection portion that connects the gate material layers of the second tier.
2. The memory device of claim 1 , further comprising:
a first metal contact via shared by the gate material layers of a first tier.
3. The memory device of claim 2 , wherein the first metal contact via conductively connects with the gate material layers of the two portions of the stack.
4. The memory device of claim 1 , wherein the sub-connection portion is connected with the gate material layers of a same tier.
5. The memory device of claim 1 , wherein a material of the sub-connection portion is same as a material of the gate material layers.
6. The memory device of claim 1 , further comprising:
a source region in the substrate; and
a source contact via in the gate line slit and connected to the source region, wherein the two portions of the stack are insulated from the source contact via.
7. A memory device, comprising:
a substrate;
a stack over the substrate;
at least one gate line slit extending along a first direction and dividing the stack into at least two portions;
a source region in the substrate; and
a source contact via in the at least one gate line slit and connected to the source region,
wherein the at least two portions of the stack are insulated from the source contact via, the stack comprises at least one connection portion that connects the two portions of the stack, the connection portion comprises at least two sub-connection portions along a second direction perpendicular to the first direction, the gate line slit comprises at least two portions along the first direction, and each sub-connection portion is between adjacent two portions of the gate line slit.
8. The memory device of claim 7 , wherein the stack comprises gate material layers and insulating layers alternatingly arranged and extending along the first direction.
9. The memory device of claim 8 , further comprising:
a first metal contact via shared by the gate material layers of a first tier.
10. The memory device of claim 9 , wherein the first metal contact via conductively connects with the gate material layers of the two portions of the stack.
11. The memory device of claim 8 , wherein the sub-connection portion is connected with the gate material layers of a same tier.
12. The memory device of claim 8 , wherein:
the stack comprises a first tier and a second tier on the first tier; and
a first sub-connection portion that connects the gate material layers of the first tier is different from a second sub-connection portion that connects the gate material layers of the second tier.
13. The memory device of claim 8 , wherein a material of the sub-connection portion is same as a material of the gate material layers.
14. A memory device, comprising:
a stack on a substrate and comprising gate material layers and insulating layers alternatingly arranged and extending along a first direction;
a gate line slit extending along the first direction and dividing the stack into two portions;
a source region in the substrate; and
a source contact via in the gate line slit and connected to the source region,
wherein the stack comprises a connection portion that connects the two portions of the stack, the connection portion comprises a plurality of sub-connection portions separating the gate line slit into a plurality of gate line slit sections, and the two portions of the stack are insulated from the source contact via.
15. The memory device of claim 14 , wherein:
the stack comprises a plurality of tiers; and
each sub-connection portion connects the gate material layers of a corresponding one of the plurality of tiers.
16. The memory device of claim 15 , further comprising:
a first metal contact via shared by the gate material layers of a first tier.
17. The memory device of claim 16 , wherein the first metal contact via conductively connects with the gate material layers of the two portions of the stack.
18. The memory device of claim 14 , wherein the plurality of sub-connection portions are located in a staircase region.