Semiconductor device with contact structures
A semiconductor device structure is provided. The semiconductor device structure includes a first epitaxial structure and a second epitaxial structure spaced apart from the first epitaxial structure. The semiconductor device structure also includes a conductive contact electrically connected to the first epitaxial structure and a first conductive via over the conductive contact. The semiconductor device structure further includes a second conductive via directly above the second epitaxial structure. The second conductive via is longer than the first conductive via.
1. A semiconductor device structure, comprising:
a first source/drain structure;
a second source/drain structure spaced apart from the first source/drain structure;
a conductive contact electrically connected to the first source/drain structure;
a first conductive via over the conductive contact; and
a second conductive via directly above the second source/drain structure, wherein the second conductive via is longer than the first conductive via, wherein a first direct projection of the first source/drain structure on a top surface of the conductive contact and a second direct projection of the first conductive via on the top surface of the conductive contact do not overlap each other, wherein an interface between the first conductive via and the conductive contact is lower than a top of the second conductive via and higher than a bottom of the second conductive via.
2. The semiconductor device structure as claimed in claim 1 , further comprising:
a dielectric layer laterally surrounding the conductive contact, the first conductive via, and the second conductive via.
3. The semiconductor device structure as claimed in claim 2 , further comprising:
a protective element laterally surrounding the first conductive via, wherein a portion of the dielectric layer is between the protective element and the second conductive via.
4. The semiconductor device structure as claimed in claim 3 , wherein top surfaces of the protective element and the dielectric layer are substantially level.
5. The semiconductor device structure as claimed in claim 3 , wherein a sidewall of the protective element directly meets a sidewall of the conductive contact.
6. The semiconductor device structure as claimed in claim 3 , wherein the protective element has a first inclined sidewall, the conductive contact has a second inclined sidewall, and slopes of the first inclined sidewall and the second inclined sidewall are substantially the same.
7. The semiconductor device structure as claimed in claim 1 , wherein top surfaces of the first conductive via and the second conductive via are substantially level.
8. The semiconductor device structure as claimed in claim 1 , further comprising:
a first conductive line over the first conductive via; and
a second conductive line over the second conductive via, wherein bottom surfaces of the first conductive line and the second conductive line are substantially level.
9. The semiconductor device structure as claimed in claim 8 , wherein the first conductive line is wider than the second conductive line.
10. The semiconductor device structure as claimed in claim 1 , wherein the conductive contact is wider than the first conductive via, and the conductive contact is wider than the second conductive via.
11. A semiconductor device structure, comprising:
a first source/drain structure;
a second source/drain structure spaced apart from the first source/drain structure;
a conductive contact electrically connected to the first source/drain structure;
a first conductive via electrically connected to the conductive contact, wherein the conductive contact is wider than the first conductive via;
a second conductive via directly above the second source/drain structure, wherein the second conductive via extends upwards past a bottom surface of the first conductive via, and the conductive contact is wider than the second conductive via; and
a protective element over the conductive contact and surrounding the first conductive via, wherein the protective element has a first inclined sidewall, the conductive contact has a second inclined sidewall, and slopes of the first inclined sidewall and the second inclined sidewall are substantially the same.
12. The semiconductor device structure as claimed in claim 11 , wherein the second conductive via is in direct contact with the second source/drain structure.
13. The semiconductor device structure as claimed in claim 11 , wherein an interface between the first conductive via and the conductive contact is lower than a top of the second conductive via and higher than a bottom of the second conductive via.
14. The semiconductor device structure as claimed in claim 11 , wherein the first inclined sidewall and the second inclined sidewall directly meet together.
15. The semiconductor device structure as claimed in claim 11 , wherein the second conductive via is in direct contact with the second source/drain structure.
16. A semiconductor device structure, comprising:
a substrate;
a first source/drain structure and a second source/drain structure over the substrate;
a conductive contact electrically connected to the first source/drain structure;
a first conductive via electrically connected to the conductive contact, wherein the conductive contact is wider than the first conductive via;
a second conductive via electrically connected the second source/drain structure, wherein top surfaces of the first conductive via and the second conductive via are substantially level, the second conductive via is closer to the substrate than the first conductive via, and the conductive contact is wider than the second conductive via;
a protective element surrounding the first conductive via, wherein the protective element has a first inclined sidewall, the conductive contact has a second inclined sidewall, and slopes of the first inclined sidewall and the second inclined sidewall are substantially the same; and
a dielectric layer surrounding the protective element, the conductive contact, and the second conductive via.
17. The semiconductor device structure as claimed in claim 16 , wherein the second conductive via extends across a top of the conductive contact.
18. The semiconductor device structure as claimed in claim 16 , wherein the first sidewall and the second sidewall directly meet together.
19. The semiconductor device structure as claimed in claim 16 , wherein a top surface of the conductive contact is vertically between opposite ends of the second conductive via.
20. The semiconductor device structure as claimed in claim 16 , wherein a first direct projection of the second conductive via on a top surface of the substrate at least partially overlaps a second direct projection of the second source/drain structure on the top surface of the substrate.