Systems and methods for power module for inverter for electric vehicle
A system includes: an inverter configured to convert DC power to AC power, wherein the inverter includes: a power module including: a first substrate, a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module, a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate; a battery; and a motor.
1 . A system comprising:
an inverter configured to convert DC power to AC power, wherein the inverter includes:
a power module including:
a first substrate,
a second substrate including a source plane and a gate plane separated from the source plane by a full trench, the source plane including a step trench, and the gate plane including an electrical connection through the second substrate to a gate input connection of the power module,
a semiconductor die disposed between the first substrate and the second substrate, the step trench formed in a portion of the source plane corresponding to an edge of the semiconductor die, and the semiconductor die including a gate connected to the gate plane, and
a sinter element disposed between the semiconductor die and the second substrate to connect the semiconductor die to the second substrate;
a battery configured to supply the DC power to the inverter; and
a motor configured to receive the AC power from the inverter to drive the motor.
2 . The system of claim 1 , wherein a thickness of the sinter element is in a range from approximately 25 μm to approximately 50 μm.
3 . The system of claim 2 , wherein the power module is configured to exhibit a drain to source isolation voltage of at least 1200 volts.
4 . A power module comprising:
a first substrate having a first outer layer and a first inner layer;
a semiconductor die coupled to a surface of the first inner layer;
a second substrate having a second outer layer and a second inner layer, the semiconductor die coupled to a surface of the second inner layer; and
a sinter element disposed between the semiconductor die and the second inner layer,
wherein the second inner layer includes a body, the body including a source plane and a gate plane separated from the source plane by a full trench, and
wherein the body includes a step trench in a portion of the body corresponding to an edge of the semiconductor die.
5 . The power module of claim 4 , wherein a thickness of the sinter element is in a range from approximately 25 μm to approximately 50 μm.
6 . The power module of claim 4 , wherein a thickness of the sinter element is approximately 25 μm.
7 . The power module of claim 4 , wherein a depth of the step trench from a surface of the sinter element attached to the second inner layer to a bottom of the step trench is in a range from approximately 50 μm to approximately 75 μm.
8 . The power module of claim 4 , wherein a depth from a surface of the semiconductor die attached to the sinter element to a bottom surface of the step trench as defined by the body of the second inner layer is in a range from approximately 75 μm to approximately 100 μm.
9 . The power module of claim 4 , wherein the step trench is in the portion of the body corresponding to the edge of the semiconductor die so that a line extending from the edge of the semiconductor die to the body, in a direction orthogonal to the surface of the second inner layer, intersects the step trench.
10 . The power module of claim 4 , wherein a width of the step trench is in a range from approximately 400 μm to approximately 500 μm.
11 . The power module of claim 4 , wherein:
the full trench extends through the body to an insulating layer of the second substrate, and
the step trench has a depth that is less than a thickness of the body.
12 . The power module of claim 4 , wherein the step trench is disposed in the source plane and the gate plane.
13 . The power module of claim 4 , wherein the semiconductor die includes a source connection, wherein the source connection is coupled to the source plane of the second inner layer of the second substrate.
14 . The power module of claim 4 , wherein the second substrate further includes a middle layer between the second inner layer and the second outer layer,
wherein the middle layer includes a ceramic,
wherein the second outer layer includes a metal, and
wherein the second inner layer includes a direct bond copper metallization layer.
15 . The power module of claim 14 , wherein the step trench is in the direct bond copper metallization layer.
16 . An inverter comprising the power module of claim 4 .
17 . A vehicle comprising the inverter of claim 16 .
18 . A power module, comprising:
a first substrate;
a second substrate including a first trench extending through a conducting body of the second substrate to an insulating body of the second substrate, and the second substrate including a second trench extending from a surface of the second substrate into the conducting body of the second substrate at a depth less than a thickness of the conducting body;
a semiconductor die disposed between the first substrate and the second substrate, the semiconductor die having a drain connection coupled to the first substrate and a source connection coupled to the second substrate; and
a sinter element disposed between the semiconductor die and the second substrate, the sinter element having a thickness in a range of 25 μm to 50 μm;
wherein the surface of the second substrate is attached to the sinter element.
19 . The power module of claim 18 , wherein the second trench is etched into the conducting body of the second substrate in a portion of the second substrate corresponding to an edge of the semiconductor die.
20 . The power module of claim 18 , wherein a width of the second trench is in a range of 400 μm to 500 μm.