Anti-flare semiconductor packages and related methods

1. A method of forming a semiconductor package, the method comprising:

providing an optically transmissive lid comprising a first side and a second side, the optically transmissive lid comprising a plurality of recesses on the second side of the optically transmissive lid;

coupling a semiconductor wafer to the first side of the optically transmissive lid, the semiconductor wafer comprising a first side and a second side, the second side of the semiconductor wafer comprising a plurality of active areas;

singulating the semiconductor wafer and the optically transmissive lid between each of the plurality of active areas in the semiconductor wafer to form a plurality of semiconductor packages;

coupling the second side of the optically transmissive lid of each of the semiconductor packages to a carrier wafer, wherein the plurality of recesses on the optically transmissive lid form a space between the carrier wafer and the optically transmissive lid;

applying a light blocking material to each of the semiconductor packages, the light blocking material encapsulating each of the semiconductor packages from a first side of the package into and including the recesses on the optically transmissive lid; and

singulating through the light blocking material to form a plurality of encapsulated semiconductor packages;

wherein the plurality of recesses are comprised on a first edge and a second edge of each optically transmissive lid around an opening in the light blocking material.

2. The method of claim 1 , further comprising forming the plurality of recesses on the second side of the optically transmissive lid through one of etching or laser ablation.

3. The method of claim 1 , wherein the light blocking material comprises a molding compound.

4. The method of claim 1 , further comprising forming a plurality of through silicon vias (TSVs), a passivation layer, a redistribution layer, a solder mask, and coupling solder bumps to each of the semiconductor packages.

5. The method of claim 1 , wherein an opening in the light blocking material on each of the plurality semiconductor packages corresponds with an active area in the semiconductor die.

6. The method of claim 1 , further comprising coupling dam material to the optically transmissive lid.

7. A method of forming a semiconductor package, the method comprising:

providing an optically transmissive lid comprising a first side and a second side opposite the first side;

coupling a semiconductor wafer to the first side of the optically transmissive lid;

singulating the semiconductor wafer and the optically transmissive lid to form a plurality of semiconductor packages;

applying light blocking material to each of the semiconductor packages, the light blocking material at least partially encapsulating each of the semiconductor packages on every side of each of the semiconductor packages.

8. The method of claim 7 , wherein the light blocking material is coupled directly to the second side of the optically transmissive lid.

9. The method of claim 7 , wherein the optically transmissive lid comprises a plurality of recesses in the second side.

10. The method of claim 7 , wherein the light blocking material comprises a mold compound.

11. The method of claim 7 , further comprising coupling the second side of the optically transmissive lids of each of the semiconductor packages to a carrier wafer prior to applying the light blocking material.

12. The method of claim 7 , wherein the light block material forms an opening on the second side of the optically transmissive lid.

13. The method of claim 7 , wherein an outermost surface of the light blocking material covering the second side of the optically transmissive lid is coplanar with an outermost surface of the second side of the optically transmissive lid.

14. A method of forming a semiconductor package, the method comprising:

providing an optically transmissive lid comprising a first side and a second side opposite the first side, the optically transmissive lid comprising a plurality of recesses on the second side of the optically transmissive lid;

coupling a semiconductor wafer to the first side of the optically transmissive lid;

singulating the semiconductor wafer and the optically transmissive lid to form a plurality of semiconductor packages;

coupling the second side of the optically transmissive lids of each of the semiconductor packages to a carrier wafer;

applying light blocking material to each of the semiconductor packages, the light blocking material encapsulating each of the semiconductor packages from a first side of the semiconductor package into the plurality of recesses on the optically transmissive lid; and

singulating through the light blocking material to form a plurality of encapsulated semiconductor packages.

15. The method of claim 14 , further comprising forming the plurality of recesses on the second side of the optically transmissive lid through one of etching or laser ablation.

16. The method of claim 14 , wherein the light blocking material comprises a molding compound.

17. The method of claim 14 , wherein an opening in the light blocking material on each of the plurality semiconductor packages corresponds with an active area in the semiconductor die.

18. The method of claim 14 , further comprising forming a plurality of dams between the optically transmissive lid and the semiconductor wafer.

19. The method of claim 14 , further comprising forming a redistribution layer on the semiconductor wafer.

20. The method of claim 14 , wherein an outermost surface of the light blocking material covering the second side of the optically transmissive lid is coplanar with an outermost surface of the second side of the optically transmissive lid.