Nonvolatile memory device and method for fabricating the same
A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
1 . A method of fabricating a three-dimensional semiconductor device, comprising:
preparing a substrate including a first region and a second region;
forming a mold structure comprising first layers and second layers alternately stacked on the substrate,
forming a plurality of vertical patterns penetrating the mold structure on the first region, the plurality of vertical patterns comprising semiconductor material;
forming a plurality of supporters penetrating the mold structure on the second region, the plurality of supporters comprising dielectric material;
removing the second layers to form gate regions between the first layers, the gate regions exposing portions of each of the vertical patterns and portions of each of the supporters; and
forming gate electrodes in the gate regions.
2 . The method of claim 1 , further comprising:
patterning a portion of the mold structure to form a staircase structure on the second region; and
forming a planarized dielectric layer covering the staircase structure of the mold structure.
3 . The method of claim 2 , wherein the staircase structure is formed before the forming of the plurality of supporters.
4 . The method of claim 3 , wherein the plurality of supporters have the same vertical length.
5 . The method of claim 2 , wherein the staircase structure is formed after the forming of the plurality of supporters.
6 . The method of claim 5 , wherein the plurality of supporters have different respective vertical lengths on the second region.
7 . The method of claim 1 , wherein the plurality of supporters have different respective vertical lengths on the second region, and
wherein the vertical lengths decrease with increasing distance from the first region.
8 . The method of claim 1 , further comprising:
forming a plurality of channel holes penetrating the mold structure on the first region; and
depositing a charge storage layer in the channel holes,
wherein the vertical patterns are formed in the channel holes having the charge storage layer.
9 . The method of claim 1 , wherein each of the gate electrodes has an end portion on the second region, and
wherein the end portions of the gate electrodes are horizontally spaced apart from each other.
10 . The method of claim 1 , wherein respective ones of the supporters penetrate all or some of the gate electrodes.
11 . A method of fabricating a three-dimensional semiconductor device, comprising:
preparing a substrate including a first region and a second region;
forming a mold structure comprising first layers and second layers alternately stacked on the substrate;
patterning a portion of the mold structure to form a staircase structure on the second region;
forming a plurality of vertical patterns penetrating the mold structure on the first region, the plurality of vertical patterns comprising semiconductor material;
forming a plurality of supporters penetrating the mold structure on the second region, the plurality of supporters comprising dielectric material;
removing the second layers to form gate regions between the first layers, the gate regions exposing portions of each of the vertical patterns and portions of each of the supporters; and
forming gate electrodes in the gate regions.
12 . The method of claim 11 , wherein at least some of the plurality of supporters penetrate the staircase structure.
13 . The method of claim 11 , wherein the plurality of supporters have the same vertical length.
14 . The method of claim 11 , wherein the plurality of supporters have different respective vertical lengths on the second region.
15 . The method of claim 11 , wherein forming the plurality of supporters comprises:
forming a plurality of dummy holes penetrating the mold structure on the second region; and
filling the plurality of dummy holes with the dielectric material.
16 . The method of claim 11 , further comprising forming a planarized dielectric layer covering the staircase structure of the mold structure.
17 . The method of claim 16 , wherein at least one of the plurality of supporters penetrates the staircase structure.
18 . The method of claim 11 , wherein each of the gate electrodes has an end portion on the second region, and
wherein the end portions of the gate electrodes are horizontally spaced apart from each other.
19 . The method of claim 11 , wherein respective ones of the supporters penetrate all or some of the gate electrodes.
20 . The method of claim 11 , further comprising:
forming a plurality of channel holes penetrating the mold structure on the first region; and
depositing a charge storage layer in the channel holes,
wherein the vertical patterns are formed in the channel holes having the charge storage layer.