Bump structure and method of manufacturing bump structure
A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
1 . A bump structure, comprising:
a passivation layer surrounding a metal pad structure;
a polyimide layer including a polyimide disposed over the passivation layer and the metal pad structure; and
a metal bump disposed over the metal pad structure and the polyimide layer,
wherein the metal bump is in electrical contact with the metal pad structure, and
the polyimide layer is adhered to the passivation layer and the metal pad structure by an adhesion promotor, wherein the adhesion promotor is chemically bonded to the polyimide, the passivation layer, and the metal pad structure.
2 . The bump structure of claim 1 , wherein the adhesion promotor is bonded to the polyimide through cross-linking groups on the adhesion promotor.
3 . The bump structure of claim 2 , wherein the cross-linking groups are one or more selected from the group consisting of an alkyl oxide group, an alkene group, an alkyne group, and a triazine group.
4 . The bump structure of claim 1 , wherein the adhesion promotor is bonded to the passivation layer through silanol groups on the adhesion promotor.
5 . The bump structure of claim 1 , wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
6 . The bump structure of claim 5 , wherein at least one of the dianhydride and the diamine comprises two or more cyclic groups.
7 . The bump structure of claim 6 , wherein the two or more cyclic groups are linked to each other by a linking group selected from the group consisting of —CH 2 —, —CH═CH—, —C≡C—, —O—, —C(O)O—, —CF 3 CH 2 CF 3 —, —CH 3 CH 2 CH 3 —, —SH—, and —SO 2 —.
8 . The bump structure of claim 1 , wherein the passivation layer includes a first passivation layer and a second passivation layer, wherein the first passivation layer and the second passivation layer are made of different materials.
9 . The bump structure of claim 1 , wherein the metal pad structure includes a metal contact pad and an under bump metallization layer disposed over the metal contact pad.
10 . The bump structure of claim 9 , wherein the under bump metallization layer comprises a bilayer of a titanium-based layer and a copper-based layer.
11 . A semiconductor device, comprising:
a chip bonded to a chip carrying substrate;
a passivation layer disposed over a main side of the chip facing the chip carrying substrate,
wherein the passivation layer surrounds a first metal pad;
a polyimide layer including a polyimide disposed over the passivation layer and the first metal pad; and
a metal bump disposed over the first metal pad and the polyimide layer,
wherein the metal bump is in electrical contact with the first metal pad and a second metal pad on the chip carrying substrate, and
wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
12 . The semiconductor device of claim 11 , wherein at least one of the dianhydride and the diamine comprises two or more cyclic groups.
13 . The semiconductor device of claim 12 , wherein the two or more cyclic groups are linked to each other by a linking group selected from the group consisting of —CH 2 —, —CH═CH—, —C≡C—, —O—, —C(O)O—, —CF 3 CH 2 CF 3 —, —CH 3 CH 2 CH 3 —, —SH—, and —SO 2 —.
14 . The semiconductor device of claim 11 , wherein at least one of the dianhydride and the diamine comprises a cycloalkane selected from the group consisting of cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, and cyclooctane.
15 . The semiconductor device of claim 11 , wherein at least one of the dianhydride and the diamine comprises a fused ring selected from the group consisting of naphthalene, anthracene, phenanthrene, chrysene, pyrene, corannulene, coronene, hexahelicene, indole, isoindole, indolizine, quinoline, isoquinoline, purine, carbazole, dibenzofuran, xanthene, phenazine, phenoxazine, and phenoxathiin.
16 . A semiconductor device, comprising:
an integrated circuit disposed in a substrate;
a metal pad embedded in a passivation layer disposed over the substrate,
wherein the metal pad is in electrical contact with the integrated circuit;
a polyimide layer including a polyimide disposed over the passivation layer and the metal pad; and
a metal bump disposed over the metal pad and the polyimide layer,
wherein the metal bump is in electrical contact with the metal pad, and
wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride or the diamine comprises two or more cyclic groups, and the two or more cyclic groups are linked to each other by a linking group selected from the group consisting of —CH═CH—, —C≡C—, —O—, —C(O)O—, —CF 3 CH 2 CF 3 —, —CH 3 CH 2 CH 3 —, —SH—, and —SO 2 —.
17 . The semiconductor device of claim 16 , further comprising a dielectric layer disposed between the metal bump and the substrate.
18 . The semiconductor device of claim 17 , further comprising a metal contact disposed in the dielectric layer,
wherein the metal contact is in electrical contact with the bump metal pad and the integrated circuit.
19 . The semiconductor device of claim 16 , wherein the passivation layer comprises:
a first passivation layer disposed over the substrate; and
a second passivation layer disposed over the first passivation layer,
wherein the first passivation layer and the second passivation layer are made of different materials.
20 . The semiconductor device of claim 16 , wherein at least one of the dianhydride and the diamine comprises a tricycloalkane or tricycloalkene.