IP Library Granted Patent US 12,733,512
Granted Patent B2
US 12,733,512 · App. 18/490,815 · Granted Sep 8, 2026

Packaged current sensor integrated circuit

Inventors: Robert A. Briano (Auburn, NH); Shixi Louis Liu (Hooksett, NH)
Assignee: Allegro MicroSystem, LLC
H10W70/421G01R15/202G01R19/0092H10N52/00H10N59/00H10W74/111H10W90/756
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Quick Facts
Patent No.
US 12,733,512
App. No.
18/490,815
Granted
Sep 8, 2026
Kind
B2
Abstract

A current sensor integrated circuit package includes a primary conductor having an input portion and an output portion, both with reduced area edges. Secondary leads each have an exposed portion and an elongated portion that is offset with respect to the exposed portion. A semiconductor die is disposed adjacent to the primary conductor on an insulator portion and at least one magnetic field sensing element is supported by the semiconductor die. A package body includes a first portion enclosing the semiconductor die and a portion of the primary conductor and a second portion enclosing the elongated portion of the plurality of secondary leads. The first package body portion has a first width configured to expose the input and output portions of the primary conductor and the second package body portion has a second width between a first and second package body side edges that is larger than the first width.

Claims (27)

1 . A current sensor integrated circuit package comprising:

a primary conductor having an input portion into which a current flows, an output portion from which the current flows, and an exposed portion, wherein the input portion has a reduced area edge and the output portion has a reduced area edge;

a plurality of secondary leads, each having an exposed portion spaced from the exposed portion of the primary conductor by an isolation distance of at least 2.0 mm, wherein an elongated portion of each of the plurality of secondary leads is offset with respect to the exposed portion of the respective secondary lead;

a semiconductor die disposed adjacent to the primary conductor and positioned on an insulator portion;

at least one magnetic field sensing element supported by the semiconductor die; and

a package body comprising a first portion enclosing the semiconductor die and a portion of the primary conductor and a second portion enclosing the elongated portion of the plurality of secondary leads, wherein the first portion of the package body has a first width configured to expose the input portion of the primary conductor and the output portion of the primary conductor and wherein the second portion of the package body has a second width between a first side edge of the package body and a second side edge of the package body that is larger than the first width,

wherein the package body is singulated along the reduced area edge of the input portion of the primary conductor and along the reduced area edge of the output portion of the primary conductor.

2 . The current sensor integrated circuit package of claim 1 , wherein the exposed input portion of the primary conductor and the exposed output portion of the primary conductor have a length of at least 0.5 mm.

3 . The current sensor integrated circuit package of claim 2 , wherein the exposed input portion of the primary conductor and the exposed output portion of the primary conductor are configured to accept one or both of a clamp or a test probe.

4 . The current sensor integrated circuit package of claim 1 , wherein the elongated portion of each of the plurality of secondary leads extends in a direction parallel to the first and second side edges of the package body.

5 . The current sensor integrated circuit package of claim 4 , wherein the reduced area edge of the input portion of the primary conductor does not extend beyond the first side edge of the package body and wherein the reduced area edge of the output portion of the primary conductor does not extend beyond the second side edge of the package body.

6 . The current sensor integrated circuit package of claim 1 , wherein each of the plurality of secondary leads has a substantially constant thickness and wherein the elongated portion of each of the plurality of secondary leads is offset with respect to the exposed portion in a direction of a thickness of the respective secondary lead.

7 . The current sensor integrated circuit package of claim 1 , wherein the elongated portion of each of the plurality of secondary leads has a thickness smaller than a thickness of the exposed portion of the respective secondary lead.

8 . The current sensor integrated circuit package of claim 1 , wherein the isolation distance is at least 4.0 mm.

9 . The current sensor integrated circuit package of claim 1 , wherein the isolation distance is at least 7.2 mm.

10 . The current sensor integrated circuit package of claim 1 , wherein each of the plurality of secondary leads comprises a first secondary lead providing an output connection of the current sensor integrated circuit package, a second secondary lead providing a voltage input connection of the current sensor integrated circuit package, and a third secondary lead providing a ground connection of the current sensor integrated circuit package.

11 . The current sensor integrated circuit package of claim 1 , further comprising a front-end amplifier supported by the semiconductor die, wherein the at least one magnetic field sensing element is coupled to the front-end amplifier.

12 . The current sensor integrated circuit package of claim 1 , comprising at least two magnetic field sensing elements.

13 . The current sensor integrated circuit package of claim 11 , wherein the at least two magnetic field sensing elements are Hall effect elements.

14 . The current sensor integrated circuit package of claim 12 , wherein the at least two magnetic field sensing elements are coupled to provide a differential output.

15 . The current sensor integrated circuit package of claim 1 , wherein one or more of the plurality of secondary leads provides a fault signal connection of the current sensor integrated circuit package.

16 . The current sensor integrated circuit package of claim 1 , further comprising a wafer backside coating material on a back of the semiconductor die.

17 . The current sensor integrated circuit package of claim 15 , further comprising a second wafer backside coating material on the back of the semiconductor die.

18 . The current sensor integrated circuit package of claim 1 , wherein the exposed portion of the primary conductor is substantially orthogonal to the first side edge of the package body and the second side edge of the package body.

19 . The current sensor integrated circuit of claim 1 , wherein the insulator portion extends beyond an edge of the primary conductor in a direction towards the plurality of secondary leads.

20 . The current sensor integrated circuit of claim 19 , wherein the insulator portion extends beyond the edge of the primary conductor in the direction towards the plurality of secondary leads by at least 0.1 mm.

21 . The current sensor integrated circuit of claim 19 , wherein the insulator portion extends beyond the edge of the primary conductor in the direction towards the plurality of secondary leads by at least 0.4 mm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2023
From: BRIANO, ROBERT A.; LIU, SHIXI LOUIS
To: ALLEGRO MICROSYSTEMS, LLC
Reel/Frame 065290/0398 →
Continuity (5)
Continuation In Part 18182434 · Mar 13, 2023
Continuation In Part 18053480 · Nov 8, 2022
Continuation In Part 17654254 · Mar 10, 2022
Continuation In Part 17409011 · Aug 23, 2021
Related Publication 20240047314A1 · Feb 8, 2024
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