Fin-type resistors
View Patent ↗A method of forming a Fin structure including a resistor present in the thin vertically oriented semiconductor body is provided. The method includes the steps of forming at least one vertically-oriented semiconductor body having exposed vertical surfaces on a substrate; implanting dopant ions into the exposed vertical surfaces of the at least one semiconductor body off-axis at a concentration and energy sufficient to penetrate into the exposed vertical surfaces of the at least one semiconductor body without saturation; and forming contacts to the at least one semiconductor body. The present invention is directed to a Fin structure which includes a resistor present within the thin vertically oriented semiconductor body.
1. A Fin structure comprising:
a structure having at least one vertically oriented semiconductor body present thereon, wherein said at least one vertically oriented semiconductor body has vertical surfaces;
a doped region, comprised of a concentration of dopant ions, present in said at least one vertically oriented semiconductor body that extends inward from said vertical surfaces, wherein said dopant ions are diffused into said semiconductor body to a predetermined depth that is dependent on the thickness of the semiconductor body and the concentration of the dopant ions; and
contacts present on outer portions of said at least one vertically oriented semiconductor body, wherein said doping region and said contacts are of the same dopant type thereby providing a resistor in said at least one vertically oriented semiconductor body.
2. The Fin structure of claim 1 wherein said at least one vertically oriented semiconductor body is comprised of single crystalline Si or SiGe.
3. The Fin structure of claim 1 wherein said at least one vertically oriented semiconductor body has a hard mask present atop a horizontal surface.
4. The Fin structure of claim 1 wherein said at least one vertically oriented semiconductor body has a patterned masking layer thereon, said patterned masking layer not covering said contacts.
5. The Fin structure of claim 4 wherein said patterned masking layer is comprised of a conductive material.
6. The Fin structure of claim 5 wherein said patterned masking layer is comprised of a non-conductive material.
7. A Fin structure according to claim 1 , wherein said contacts comprise further doped regions fomied in upper, horizontal surfaces of the semiconductor body and laterally extending thereacross.
8. A Fin structure according to claim 1 , wherein:
said doped region includes:
i) a first doped portion of the semiconductor body extending inward from a first vertical surface of the semiconductor body; and
ii) a second doped portion of the semiconductor body extending inward from a second vertical surface of the semiconductor body; and the semiconductor body includes an undoped portion laterally extending between and separating said first and second doped portion.
9. A Fin structure comprising:
a structure having at least one vertically oriented semiconductor body present thereon, wherein said at least one vertically oriented semiconductor body has vertical surfaces;
a doped region, comprised of a concentration of dopant ions, present in said at least one vertically oriented semiconductor body that extends inward from said vertical surfaces, wherein said dopant ions are diffused into said semiconductor body to a predetermined depth that is dependent on the thickness of the semiconductor body and the concentration of the dopant ions; and
contacts present on outer portions of said at least one vertically oriented semiconductor body, wherein said doping region and one of said contacts are of opposite dopant type thereby providing a diode in said at least one vertically oriented semiconductor body.
10. The Fin structure of claim 9 wherein said diode includes said contacts that are of opposite dopant style.
11. The Fin structure of claim 9 where said diode includes said contacts wherein one of the contacts comprises a doped region having a conductivity type dopant which is different from said dopant region and the other contact is a silicide.