Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer
View Patent ↗An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is improved by incorporating an adhesion transition layer between the two dielectric layers. The presence of the adhesion transition layer between the upper level low-k dielectric and the diffusion barrier capping dielectric can reduce the chance of delamination of the interconnect structure during the packaging process. The adhesion transition layer provided herein includes a lower SiO x — or SiON-containing region and an upper C graded region. Methods of forming such a structure, in particularly the adhesion transition layer, are also provided.
1. An interconnect structure that includes at least an upper low-k dielectric material having a dielectric constant of less than 4.0 and an underlying diffusion barrier capping dielectric, wherein an adhesion transition layer comprising a lower SiO x — or SiON-containing region and an upper C graded region is located between the upper low-k dielectric material and the underlying diffusion barrier capping dielectric.
2. The interconnect structure of claim 1 wherein the upper C graded region of the adhesion transition layer is C depleted near the lower SiO x — or SiON-containing region.
3. The interconnect structure of claim 1 wherein the diffusion barrier capping dielectric is located atop a lower level low-k dielectric.
4. The interconnect structure of claim 3 wherein the lower level low-k dielectric includes metal wiring regions.
5. The interconnect structure of claim 4 wherein the metal wiring regions comprise a conductive metal.
6. The interconnect structure of claim 5 wherein the conductive metal is Al, Cu, W, or alloys thereof.
7. The interconnect structure of claim 1 wherein the upper level low-k dielectric includes metal wiring regions.
8. The interconnect structure of claim 7 wherein the metal wiring regions comprise a conductive metal.
9. The interconnect structure of claim 8 wherein the conductive metal is Al, Cu, W, or alloys thereof.
10. The interconnect structure of claim 1 wherein said lower SiO x — or SiON-containing region has a thickness from about 1 to about 20 nm.
11. The interconnect structure of claim 1 wherein said upper C graded region has a thickness from about 1 to about 50 nm.
12. The interconnect structure of claim 1 wherein said upper low-k dielectric material comprises elements of Si, C, O and H and said underlying diffusion barrier capping layer comprises elements of C, Si, H and optionally N.
13. An interconnect structure that includes at least an upper low-k dielectric material comprising elements of Si, C, O and H and an underlying diffusion barrier capping dielectric comprising elements of C, Si, N and H, wherein an adhesion transition layer comprising a lower SiO x — or SiON-containing region and an upper C graded region is located between the upper low-k dielectric material and the underlying diffusion barrier capping dielectric.