Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
View Patent ↗A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
1. A microcrystalline film comprising hafnium oxide and/or zirconium oxide, said film comprising no C and OH and having a grain size of about 10 nm or less.
2. The film of claim 1 wherein said film has a grain size of about 0.2 to about 6.5 nm.
3. The film of claim 1 wherein said film has a dielectric constant of about 7 or greater.
4. An electronic device including at least the film of claim 1 located on a surface of a substrate.
5. The electronic device of claim 4 wherein said substrate is a semiconducting material, an insulator or a conductive material.
6. The electronic device of claim 4 further comprising a conductive material located a top a portion of said film.
7. The electronic device of claim 4 wherein film is a gate dielectric of a transistor.
8. The electronic device of claim 4 wherein said film is a dielectric of a capacitor.
9. The electronic device of claim 4 wherein said film is a component of a diode, resister, switch, light emitting diode or laser.
10. The electronic device of claim 6 wherein said conductive material is Ni, W, Mo, Ti, Cr, Te, Cu, Pd, Pt, Be, Au, Ir, Ta, Rh, Fe, Mn, Nb, V, Re, Ag, Bi, Cd, Ga, Hf, In, Y, Zr, TaN, TaSiN, TiAlN, TiSiN, TaWN, TiWN, TaAlN, NbN, ZrN, TaTiN, IrO 2 , SiC, TiNPt, TiAlN-PT, Ru, RuO 2 , RuPt, WSi, TiSi, dopped and undoped polysilicon, Al, IrO x , Os, OsO x , MoSi, ReO 2 , doped or undoped alloys, mixtures and mutilayers.
11. The electronic device of claim 4 further comprising a SiO 2 , SiN or SiON layer located between the substrate and the film.
12. The electronic device of claim 11 wherein said SiO 2 , SiN or SiON layer has a thickness of from about 1 to about 30 Å.
13. A microcrystalline film comprising a hafnium oxide and/or zirconium oxide film present on an upper surface of a substrate, the hafnium oxide and/or zirconium oxide film comprising no C and OH and having a grain size of about 10 nm or less, wherein the hafnium oxide and/or zirconium oxide film has an upper surface free of divots.