EUV pellicle and method for fabricating semiconductor dies using same

1. An extreme ultraviolet (EUV) pellicle for use with a lithographic mask to fabricate a semiconductor wafer, said EUV pellicle comprising:

a low density and low EUV transmission loss aerogel carbon nanotube film capable of being mounted over said lithographic mask;

wherein said carbon nanotube film protects said lithographic mask from contamination by an undesirable particle and prevents said undesirable particle from forming a focused image on a surface of said semiconductor wafer;

said aerogel carbon nanotube film having said low EUV transmission loss due to a low Rayleigh scattering resulting from reduced size nanopore diameters.

2. The EUV pellicle of claim 1 further comprising at least one layer of polymer film situated over or under said carbon nanotube film.

3. The EUV pellicle of claim 1 wherein said carbon nanotube film transmits a substantial portion of incident EUV light.

4. The EUV pellicle of claim 1 wherein said EUV pellicle is mounted over said lithographic mask.

5. The EUV pellicle of claim 1 wherein said carbon nanotube film has a thickness in a range from approximately 1.0 nanometer to approximately 5.0 nanometers.

6. A method for fabricating a semiconductor wafer using extreme ultraviolet (EUV) lithography, said method comprising:

forming a lithographic mask;

mounting an EUV pellicle over said lithographic mask, said EUV pellicle comprising a low density and low EUV transmission loss aerogel carbon nanotube film, said aerogel carbon nanotube film having said low EUV transmission loss due to a low Rayleigh scattering resulting from reduced size nanopore diameters;

using EUV light to produce a pattern from said lithographic mask on said semiconductor wafer.

7. The method of claim 6 further comprising dicing said semiconductor wafer into a plurality of semiconductor dies.

8. The method of claim 7 further comprising packaging one or more of said plurality of semiconductor dies.

9. The method of claim 7 wherein one or more of said plurality of semiconductor dies are microprocessor dies.

10. The method of claim 6 wherein said EUV pellicle further comprises at least one layer of polymer film situated over or under said carbon nanotube film.

11. The method of claim 10 wherein said at least one layer of polymer film is selected from the group consisting of a plexiglass film, a polymethyl methacrylate film, and a polysiloxane film.

12. The method of claim 6 wherein said carbon nanotube film transmits a substantial portion of incident EUV light.

13. The method of claim 6 wherein said carbon nanotube film comprises a thickness in a range from approximately 1.0 nanometer to approximately 5.0 nanometers.

14. The method of claim 7 , wherein one or more of said plurality of semiconductor dies are utilized in a circuit board as a part of an electronic system, said electronic system being selected from the group consisting of a wired communications device, a wireless communications device, a cell phone, a switching device, a router, a repeater, a codec, a LAN, a WLAN, a Bluetooth enabled device, a digital camera, a digital audio player and/or recorder, a digital video player and/or recorder, a computer, a monitor, a television set, a satellite set top box, a cable modem, a digital automotive control system, a digitally-controlled home appliance, a printer, a copier, a digital audio or video receiver, an RF transceiver, a personal digital assistant (PDA), a digital game playing device, a digital testing and/or measuring device, a digital avionics device, a medical device, and a digitally-controlled medical equipment.