Separation methods for semiconductor charge accumulation layers and structures thereof
Devices and methods for isolating adjacent charge accumulation layers in a semiconductor device are disclosed. In one embodiment, a semiconductor device comprises a bit line formed in a semiconductor substrate, a charge accumulation layer formed on the semiconductor substrate, a word line formed on the charge accumulation layer across the bit line, and a channel region formed in the semiconductor substrate below the word line and between the bit line and its adjacent bit line. For the semiconductor device, the charge accumulation layer is formed above the channel region in a widthwise direction of the word line, and a width of the word line is set to be narrower than a distance between an end of the channel region and a central part of the channel region in a lengthwise direction of the word line.
1. A method for manufacturing a semiconductor device, the method comprising:
forming a bit line in a semiconductor substrate;
forming an oxide nitride oxide (ONO) film which includes a charge accumulation layer on the semiconductor substrate;
forming a word line on the ONO film and across the bit line;
forming a hole in the ONO film between the word line and its adjacent word line and between the bit line and an adjacent bit line; and
isotropically etching the charge accumulation layer via the hole.
2. The method of claim 1 , wherein the forming the bit line comprises:
implanting an arsenic ion in the semiconductor substrate; and
heat treating the semiconductor substrate.
3. The method of claim 1 , wherein the forming the ONO film comprises:
forming a tunnel insulating film on the semiconductor substrate;
forming the charge accumulation layer on the tunnel insulating film; and
forming a top insulating film on the charge accumulation layer.
4. The method of claim 3 , wherein the forming the hole comprises:
coating a photoresist on the ONO film and the word line;
forming an opening at a central part of the photoresist using a resist-shrink process; and
dry-etching the central part of the photoresist to form the hole in the ONO film.
5. The method of claim 4 , wherein the hole is formed at the central part of the photoresist and the top insulating film.
6. The method of claim 1 , wherein the etching the charge accumulation layer comprises applying a photosphoric acid into the hole to form a hollow section by removing outer edges of the charge accumulation layer.
7. The method of claim 6 , wherein the hollow section isolates the bit line from its adjacent bit line.
8. The method of claim 6 , further comprising filling the hollow section with a dielectric material.
9. The method of claim 1 , further comprising forming a channel region in the semiconductor substrate below the word line and between the bit line and the adjacent bit line.
10. The method of claim 9 , wherein the charge accumulation layer is formed above the channel region in a widthwise direction of the word line, and wherein a width of the word line is set to be narrower than a distance between an end of the channel region and a central part of the channel region in a lengthwise direction of the word line.
11. A method for manufacturing a semiconductor device, the method comprising:
forming a bit line in a semiconductor substrate;
forming an oxide nitride oxide (ONO) film which includes a charge accumulation layer on the semiconductor substrate;
forming a word line on the ONO film and across the bit line;
forming a hole in the ONO film between the word line and its adjacent word line and between the bit line and its adjacent bit line; and
isotropically etching the charge accumulation layer via the hole by applying a phosphoric acid to the hole to form a hollow section by removing outer edges of the charge accumulation layer, wherein the hollow section is formed such that the bit line is connected to an adjacent bit line via a narrow path in a lengthwise direction of the word line.
12. The method of claim 11 , wherein the forming the hole comprises:
coating a photoresist on the ONO film and the word line;
forming an opening at the central part of the photoresist using a resist-shrink process; and
dry-etching the central part of the photoresist to form the hole in the ONO film.
13. The method of claim 12 , wherein the hole is formed at the central part of the photoresist and the top insulating film.
14. The method of claim 13 , wherein the etching the charge accumulation layer comprises phosphoric acid to the hole to remove outer edges of the charge accumulation layer.
15. The method of claim 11 , wherein the charge accumulation layer is formed above the channel region in a widthwise direction of the word line, and wherein a width of the word line is set to be narrower than a distance between an end of the channel region and a central part of the channel region in a lengthwise direction of the word line.