Semiconductor package having through-hole vias on saw streets formed with partial saw
A method of forming through-hole vias in a semiconductor wafer involves forming a semiconductor wafer having a plurality of die with contact pads disposed on a surface of each die. The semiconductor wafer has a saw street between each die. A trench is cut in the saw street without using support material to support the wafer. The trench extends only partially through the wafer. The uncut portion of the saw street below the trench along a backside of the wafer providing structural support for the wafer without support material during formation a plurality of conductive vias in the saw streets adjacent to the contact pads, and electrical connection of the conductive vias to the contact pads. The uncut portion of the saw street below the trench along the backside of the wafer portion is removed. The semiconductor wafer is singulated along the saw street to separate the die.
1. A method of forming through-hole vias in a semiconductor wafer, comprising:
forming a semiconductor wafer having a plurality of die with contact pads disposed on a surface of the plurality of die, the semiconductor wafer having a saw street between the plurality of die;
cutting a trench in the saw street, the trench extending partially through the semiconductor wafer, an uncut portion of the saw street below the trench along a backside of the semiconductor wafer maintaining structural support for the semiconductor wafer during processing steps of:
(a) filling the trench with an organic material,
(b) forming a plurality of vias in the organic material adjacent to the contact pads,
(c) depositing conductive material in the plurality of vias to form metal vias, and
(d) electrically connecting the metal vias to the contact pads;
removing the uncut portion of the saw street below the trench along the backside of the semiconductor wafer; and
singulating the semiconductor wafer along the saw street to separate the plurality of die.
2. The method of claim 1 , further including
forming traces over the semiconductor wafer.
3. The method of claim 2 , wherein to form metal vias includes forming one metal via between the contact pads on adjacent die.
4. The method of claim 2 , wherein the semiconductor wafer is singulated through the metal vias to form half metal vias electrically connected to the contact pads by the traces.
5. The method of claim 2 , wherein to form metal vias includes forming two metal vias side by side between the contact pads on adjacent die.
6. The method of claim 5 , wherein the semiconductor wafer is singulated along the saw street between the two metal vias to form full metal vias electrically connected to the contact pads by the traces.
7. A method of forming through-hole vias in a semiconductor wafer, comprising:
forming a semiconductor wafer having a plurality of die with contact pads disposed on a surface of the plurality of die, the semiconductor wafer having a saw street between the plurality of die;
cutting a trench in the saw street without using support material to support the semiconductor wafer, the trench extending partially through the semiconductor wafer, an uncut portion of the saw street below the trench along a backside of the semiconductor wafer having sufficient thickness to maintain structural support for the semiconductor wafer without support material during processing steps of,
(a) depositing an organic material in the trench,
(b) forming a plurality of vias in the organic material,
(c) depositing conductive material in the plurality of vias to form conductive vias, and
(d) electrically connecting the conductive vias to the contact pads;
removing the uncut portion of the saw street below the trench along the backside of the semiconductor wafer; and
singulating the semiconductor wafer along the saw street to separate the plurality of die.
8. The method of claim 7 , further including
forming traces over the semiconductor wafer.
9. The method of claim 7 , wherein to form conductive vias includes forming one conductive via between the contact pads on adjacent die.
10. The method of claim 7 , wherein the semiconductor wafer is singulated through the conductive vias to form half conductive vias.
11. The method of claim 7 , wherein to form conductive vias includes forming two conductive vias side by side between the contact pads on adjacent die.
12. The method of claim 11 , wherein the semiconductor wafer is singulated along the saw street between the two conductive vias to form full conductive vias.
13. The method of claim 7 , further including:
stacking the plurality of die to provide stacked die; and
electrically connecting the stacked die through the conductive vias.
14. The method of claim 7 , wherein the trench is centered about the saw street.
15. A method of forming through-hole vias in a semiconductor wafer, comprising:
forming a semiconductor wafer having a plurality of die;
cutting a trench between the plurality of die, the trench extending partially through the semiconductor wafer, an uncut portion of the semiconductor wafer below the trench maintaining structural support for the semiconductor wafer during processing steps of,
(a) forming a plurality of conductive vias between the plurality of die,
(b) forming traces over the semiconductor wafer, and
(c) electrically connecting the conductive vias to contact pads on the plurality of die;
removing the uncut portion of the semiconductor wafer below the trench along the backside of the semiconductor wafer; and
singulating the semiconductor wafer to separate the plurality of die.
16. The method of claim 15 , wherein forming the plurality of conductive vias includes forming one conductive via between the contact pads on adjacent die.
17. The method of claim 15 , wherein the semiconductor wafer is singulated through the conductive vias to form half conductive vias.
18. The method of claim 15 , wherein forming the plurality of conductive vias includes forming two conductive vias side by side between the contact pads on adjacent die.
19. The method of claim 18 , wherein the semiconductor wafer is singulated between the two conductive vias to form full conductive vias.
20. The method of claim 15 , further including:
stacking the plurality of die to provide stacked die; and
electrically connecting the stacked die through the conductive vias.
21. The method of claim 15 , wherein the trench is centered between the plurality of die.