Method characterizing materials for a trench isolation structure having low trench parasitic capacitance
Provided are methods and composition for forming a multi-layer isolation structure on an integrated circuit substrate. A process can include selecting a lower dielectric material for the lower dielectric layer and selecting an upper dielectric material for the upper dielectric layer. A range of effective dielectric constants that correspond to the thicknesses the lower and upper dielectric materials are selected. A range of thicknesses for each of the lower and upper dielectric layers are determined from a range of acceptable dielectric constants using information indicating an effective dielectric constant corresponding to thicknesses of the materials for both the lower upper dielectric layers, enabling the formation of the multi-layer isolation structure.
1. A method of selecting a thickness of a lower dielectric layer and a thickness of an upper dielectric layer to be formed above the lower dielectric layer of a multi-layer isolation structure comprises:
selecting a silicon oxycarbide (SiOC) material for a lower dielectric layer and one of a amorphous silicon carbide and a silicon dioxide material for an upper dielectric layer;
selecting a range of one or more effective dielectric constants that correspond to thicknesses of both the lower dielectric material and the upper dielectric material; and
determining a range of one or more thicknesses of each of the lower dielectric layer and the upper dielectric layer from the range of acceptable dielectric constants using information indicating an effective dielectric constant corresponding to thicknesses of both the lower dielectric material for the lower dielectric layer and the upper dielectric material for the upper dielectric layer, wherein the thicknesses of the upper and lower dielectric layers are arranged so that an effective dielectric constant for the multi-layer isolation structure is less than that of silicon dioxide and such that the parasitic capacitance of the multi-layer isolation structure is less than that of silicon dioxide thereby enabling the multi-layer isolation structure to be formed.
2. The method recited in claim 1 , wherein the upper dielectric layer comprises amorphous silicon carbide.
3. The method recited in claim 1 , wherein the upper dielectric layer comprises silicon dioxide.
4. The method recited in claim 1 , wherein the thickness of the upper dielectric layer is less than the thickness of the lower dielectric layer.
5. The method recited in claim 1 wherein the effective dielectric constant corresponds to at least one of horizontal and vertical capacitance associated with the isolation structure.
6. The method recited in claim 1 , wherein the effective dielectric constant of the isolation structure corresponds to relative thicknesses of both the first and second dielectric layers.
7. The method recited in claim 1 , wherein the second dielectric layer is formed of a material having a greater HF etch resistance than silicon dioxide.
8. The isolation structure as recited in claim 7 , wherein the upper dielectric layer has an HF etch selectivity of between approximately 5:1 and approximately 30:1 to silicon dioxide.
9. The method recited in claim 1 , wherein aggregate thickness for said upper and lower dielectric layers of the multi-layer isolation structure is constrained by an isolation trench depth into which the multi-layer isolation structure is to be formed.
10. The method recited in claim 9 , wherein a liner layer to be used with said multi-layer isolation layer is introduced into the calculation of the thicknesses for said upper and lower layers.
11. The method recited in claim 1 , wherein determining a range of said one or more thicknesses of each of the lower dielectric layer and the upper dielectric layer includes using a model of that includes at least one of dielectric constants for the upper and lower materials, upper and lower dielectric layer thickness, and capacitance information associated with said layers.
12. The method recited in claim 11 , wherein determining a range of said one or more thicknesses of each of the lower dielectric layer and the upper dielectric layer includes using a model of that includes at least one of dielectric constants for the upper and lower materials, upper and lower dielectric layer thickness, and capacitance information associated with said layers.
13. The method recited in claim 12 , wherein the model uses simulated data.
14. The method recited in claim 11 , wherein the process of determining thicknesses of each of the lower dielectric layer and the upper dielectric layer with said model comprises using an iterative process to identify appropriate thicknesses for said upper and lower dielectric layers.
15. A method of selecting a thickness of a lower dielectric layer and a thickness of an upper dielectric layer to be formed above the lower dielectric layer of a multi-layer isolation structure comprises:
selecting a lower dielectric material for the lower dielectric layer and an upper dielectric material for the upper dielectric layer;
selecting a range of one or more effective dielectric constants that correspond to thicknesses of both the lower dielectric material and the upper dielectric material; and
determining a range of one or more thicknesses of each of the lower dielectric layer and the upper dielectric layer from the range of acceptable dielectric constants using information indicating an effective dielectric constant corresponding to thicknesses of both the lower dielectric material for the lower dielectric layer and the upper dielectric material for the upper dielectric layer, thereby enabling the multi-layer isolation structure to be formed such that the thicknesses of the upper and lower dielectric layers are arranged so that an effective dielectric constant for the multi-layer isolation structure is less than that of a silicon dioxide layer.
16. The method of claim 15 wherein the thicknesses of the upper and lower dielectric layers are arranged so that a parasitic capacitance of the multi-layer isolation structure is less than that of silicon dioxide.
17. The method of claim 16 wherein
said lower dielectric layer is formed of a silicon oxycarbide (SiOC) material; and
said upper dielectric layer is formed of one of amorphous silicon carbide and silicon dioxide.
18. The method of claim 16 further comprising forming said dielectric layers on a substrate.
19. The method of claim 18 wherein said forming of the dielectric layers on the substrate comprises forming the dielectric layers on a trench structure on a silicon substrate.
20. The method recited in claim 15 , wherein aggregate thickness for said upper and lower dielectric layers of the multi-layer isolation structure is constrained by an isolation trench depth into which the multi-layer isolation structure is to be formed.
21. The method recited in claim 20 , wherein a liner layer to be used with said multi-layer isolation layer is introduced into the calculation of the thicknesses for said upper and lower layers.