Air gap interconnect structures and methods for forming the same
View Patent ↗A metal interconnect structure includes at least a pair of metal lines, a cavity therebetween, and a dielectric metal-diffusion barrier layer located on at least one portion of walls of the cavity. After formation of a cavity between the pair of metal lines, the dielectric metal-diffusion barrier layer is formed on the exposed surfaces of the cavity. A dielectric material layer is formed above the pair of metal lines to encapsulate the cavity. The dielectric metal-diffusion barrier layer prevents diffusion of metal and impurities from one metal line to another metal line and vice versa, thereby preventing electrical shorts between the pair of metal lines.
1. A metal interconnect structure comprising:
at least two metal lines embedded in a first dielectric material layer;
a dielectric cap material layer located on a top surface of said first dielectric material layer and top surfaces of said at least two metal lines;
a second dielectric material layer located above said dielectric cap material layer;
a cavity embedded in said first and second dielectric material layers; and
at least one dielectric metal-diffusion barrier layer located at least on an upper surface of said dielectric cap material layer and including a portion located underneath said cavity, wherein said at least one dielectric metal-diffusion barrier layer is a single contiguous layer of a dielectric metal-diffusion barrier material that laterally surrounds said cavity.
2. The metal interconnect structure of claim 1 , wherein said cavity is spaced from said first dielectric material layer by said single contiguous layer.
3. The metal interconnect structure of claim 1 , wherein said first dielectric material layer does not directly contact a material of said second dielectric material layer.
4. The metal interconnect structure of claim 1 , wherein said at least one dielectric metal-diffusion barrier layer includes a first dielectric metal-diffusion barrier portion located on said upper surface of said dielectric cap material layer and a second dielectric metal-diffusion barrier portion located underneath said cavity.
5. The metal interconnect structure of claim 4 , wherein a material of said second dielectric material layer contacts said first dielectric material layer between said first dielectric metal-diffusion barrier portion and said second metal-diffusion barrier portion.
6. The metal interconnect structure of claim 1 , wherein a material of said second dielectric material layer encapsulates said cavity.
7. The metal interconnect structure of claim 1 , further comprising a conductive material portion located on a top surface of said at least two metal lines, wherein said at least one dielectric metal-diffusion barrier layer is located on said conductive material portion.
8. The metal interconnect structure of claim 1 , wherein said at least one dielectric metal-diffusion barrier layer comprises a dielectric material selected from silicon nitride, silicon carbide nitride, silicon carbide, silicon boride, silicon carbide boride, a dielectric metal oxide, a dielectric metal nitride, a dielectric metal silicate, or a combination thereof.
9. A metal interconnect structure comprising:
at least two metal lines embedded in a first dielectric material layer;
a dielectric cap material layer located on a top surface of said first dielectric material layer and top surfaces of said at least two metal lines;
a second dielectric material layer located above said dielectric cap material layer;
a cavity embedded in said first and second dielectric material layers; and
at least one dielectric metal-diffusion barrier layer contacting top surfaces of said at least two metal lines and sidewall surfaces of said first dielectric material layer, wherein said cavity is encapsulated by a material of said second dielectric material layer.
10. A metal interconnect structure comprising:
at least two metal lines embedded in a first dielectric material layer;
a dielectric cap material layer located on a top surface of said first dielectric material layer and top surfaces of said at least two metal lines;
a second dielectric material layer located above said dielectric cap material layer;
a cavity embedded in said first and second dielectric material layers; and
a dielectric metal-diffusion barrier layer located on sidewall surfaces of said first dielectric material layer and laterally surrounding said cavity, wherein said dielectric metal-diffusion barrier layer is not present above an interface between said first dielectric material layer and said dielectric cap material layer, and a material of said second dielectric material layer contacts said first dielectric material layer through an opening in said dielectric metal-diffusion barrier layer underneath said cavity.
11. A metal interconnect structure comprising:
at least two metal lines embedded in a first dielectric material layer;
a dielectric cap material layer located on a top surface of said first dielectric material layer and top surfaces of said at least two metal lines;
a second dielectric material layer located above said dielectric cap material layer;
a cavity embedded in said first and second dielectric material layers; and
at least one dielectric metal-diffusion barrier layer located at least on an upper surface of said dielectric cap material layer and including a portion located underneath said cavity, wherein a material of said second dielectric material layer encapsulates said cavity.
12. The metal interconnect structure of claim 11 , wherein said at least one dielectric metal-diffusion barrier layer is a single contiguous layer of a dielectric metal-diffusion barrier material that laterally surrounds said cavity.
13. The metal interconnect structure of claim 12 , wherein said cavity is spaced from said first dielectric material layer by said single contiguous layer.
14. The metal interconnect structure of claim 12 , wherein said first dielectric material layer does not directly contact a material of said second dielectric material layer.
15. The metal interconnect structure of claim 11 , wherein said at least one dielectric metal-diffusion barrier layer includes a first dielectric metal-diffusion barrier portion located on said upper surface of said dielectric cap material layer and a second dielectric metal-diffusion barrier portion located underneath said cavity.
16. The metal interconnect structure of claim 15 , wherein a material of said second dielectric material layer contacts said first dielectric material layer between said first dielectric metal-diffusion barrier portion and said second metal-diffusion barrier portion.
17. The metal interconnect structure of claim 11 , further comprising a conductive material portion located on a top surface of said at least two metal lines, wherein said at least one dielectric metal-diffusion barrier layer is located on said conductive material portion.
18. The metal interconnect structure of claim 11 , wherein said at least one dielectric metal-diffusion barrier layer comprises a dielectric material selected from silicon nitride, silicon carbide nitride, silicon carbide, silicon boride, silicon carbide boride, a dielectric metal oxide, a dielectric metal nitride, a dielectric metal silicate, or a combination thereof.