Multi component dielectric layer
An in-situ process is described incorporating plasma enhanced chemical vapor deposition comprising flowing at least one of a Si, Si+C, B, Si+B, Si+B+C, and B+C containing precursor, and a N containing precursors at first times and removing the N precursor at second times and starting the flow of an oxidant gas and a porogen gas into the chamber. A dielectric layer is described comprising a network having inorganic random three dimensional covalent bonding throughout the network which contains at least one SiCN, SiCNH, SiN, SiNH, BN, BNH, CBN, CBNH, BSiN, BSiNH, SiCBN and SiCBNH as a first component and a low k dielectric as a second component adjacent thereto.
1. A method for forming a dielectric structure comprising:
placing a substrate in a chamber for performing one of plasma enhanced chemical vapor deposition and plasma enhanced atomic layer deposition,
flowing a vapor including at least one of a Si, Si+C, B, Si+B, Si+B+C, and B+C containing precursor, a N containing precursor, and an inert gas into said chamber,
heating said substrate in said chamber in the range from 100° C. to 450°,
initiating a plasma in said chamber to form a first component comprising at least one of SiCN, SiCNH, SiN, SiNH, BN, BNH, CBN, CBNH, BSiN, BSiNH, SiCBN and SiCBNH on said substrate,
while maintaining said plasma, reducing the flow of said N containing precursor to substantially zero while maintaining said flow of said at least one of a Si, Si+C, B, Si+B, Si+B+C, and B+C containing precursor and said inert gas, and
flowing an oxidant gas into said chamber to form a second component adjacent said first component, said second component comprising at least one of SiCOH, p-SiCOH, p-SiCNH, p-BN, p-BNH, p-CBN and p-CBNH.
2. The method of claim 1 wherein said N containing precursor comprises
ammonia, and said Si and C containing precursor is selected from the group consisting of trimethylsilane, tetramethylsilane, dimethylsilacyclopentane (DMSCP) and disilacyclobutane.
3. The method of claim 2 while maintaining said plasma and said flow further including adjusting flows of said Si and C containing precursor and said oxidant and further including flowing a porogen vapor to provide a second component having a final dielectric constant k value less than 3.2.
4. The method of claim 1 wherein said flowing a vapor further comprises flowing a B containing precursor selected from the group consisting of borane, diborane, liquid borazine (B 3 N 3 H 6 ), ammonia borane (NH 3 —BH 3 ), and other gas/liquid/vapor containing B, N and H elements only.
5. The method of claim 1 wherein said flowing a vapor further comprises
flowing a B containing precursor selected from the group consisting of borane, diborane, liquid borazine (B 3 N 3 H 6 ), ammonia borane (NH 3 —BH 3 ), other gas/liquid/vapor containing B, N and H elements only and flowing a hydrocarbon selected from the group consisting of ethylene, propylene, ethane, other gas/liquid/vapor containing N,N′,N″ trimethyl borazine, other gas/liquid/vapor precursors containing B,B′,B″ triethynyl borazine and other gas/liquid/vapor precursors containing B, N, C and H elements only.
6. The method of claim 1 wherein said flowing a vapor further comprises flowing a B containing precursor selected from the group consisting of borane, diborane, liquid borazine (B 3 N 3 H 6 ), ammonia borane (NH 3 —BH 3 ), and other gas/liquid/vapor containing B, N and H elements only and flowing a silane based precursor selected from the group consisting of SiH 4 and Si 2 H 6 .
7. The method of claim 1 wherein said flowing a vapor further comprises flowing a B containing precursor selected from the group consisting of borane, diborane, liquid borazine (B 3 N 3 H 6 ), ammonia borane (NH 3 —BH 3 ), and other gas/liquid/vapor containing B, N and H elements only, flowing a hydrocarbon selected from the group consisting of ethylene, propylene, ethane, and other gas/liquid/vapor containing N,N′,N″ trimethyl borazine, other gas/liquid/vapor containing B,B′,B″ triethynyl borazine and other gas/liquid/vapor precursors containing B, N, C and H elements only and flowing at least one of a silane based precursor selected from the group consisting of SiH 4 and Si 2 H 6 and an alkylsilane precursor.
8. The method of claim 1 wherein said oxidant gas is selected from the group consisting of N 2 O and O 2 .
9. The method of claim 1 further including flowing a porogen vapor into said chamber.
10. The method of claim 9 wherein said porogen vapor comprises a vapor of a hydrocarbon, preferably selected from the group consisting of bicycloheptadiene (BCHD), hexadiene, limonene and alphaterpinene.
11. The method of claim 1 further including exposing said dielectric structure to at least one of ultraviolet radiation, electron beam and thermal treatment to form a porosity in said second component.