Low leakage FINFETs
By aligning the primary flat of a wafer with a ( 100 ) plane rather than a ( 110 ) plane, devices can be formed with primary currents flowing along the ( 100 ) plane. In this case, the device will intersect the ( 111 ) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the ( 111 ) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.
1. An integrated circuit (IC) device, comprising:
a substrate;
a fin on an uppermost portion of the substrate, the fin comprising a crystalline semiconducting material extending upwards by a first height from the uppermost portion of the substrate, the fin having a given width and length, the fin further comprising:
a source region, the source region being doped with a first dopant which supports a first type of majority carrier;
a drain region, the drain region being doped with a second dopant which supports the first type of majority carrier;
a channel region, the channel region being interposed between the source region and the drain region, wherein the channel region and the source region and the drain region are aligned alone a line substantially parallel to a { 100 } plane of the crystalline semiconducting material of the fin; and
a gate region, the gate region being formed on at least three sides of the channel region, the gate region being separated from the channel region by a thin dielectric layer, the gate region being doped with a dopant which supports a second type of majority carrier; and
an etched dielectric fill layer disposed on both sides of the fin along the length of the fin, the etched dielectric fill layer extending by a second height from the uppermost portion of the substrate, the second height being shorter than the first height, wherein the gate region is formed over the channel region and the etched dielectric fill layer.
2. The IC device of claim 1 wherein the substrate is silicon-on-insulator (SOI).
3. The IC device of claim 1 wherein the substrate is oxygen-implanted silicon (SIMOX).
4. The IC device of claim 1 wherein the crystalline semiconducting material is comprised substantially of silicon.
5. The IC device of claim 1 , wherein the difference between the first height and the second height is approximately 100 nm to 450 nm and the width of the fin is approximately 100 nm or less.
6. The IC device of claim 1 , wherein the thin dielectric layer is approximately 20 angstroms to 30 angstroms.
7. The IC device of claim 1 , wherein the gate region has rounded uppermost edges.
8. An integrated circuit (IC) device, comprising:
a substrate;
a fin on an uppermost portion of the substrate, the fin comprising a crystalline semiconducting material extending upwards by a first height from the uppermost portion of the substrate, the fin having a given width and length with rounded uppermost edges, the fin further comprising:
a source region, a drain region, and a channel region, the channel region being interposed between the source region and the drain region, wherein the channel region and the source region and the drain region are aligned alone a line substantially parallel to a { 100 } plane of the crystalline semiconducting material of the fin; and
a gate region, the gate region being formed on at least three sides of the channel region, the gate region being separated from the channel region by a thin dielectric layer; and
an etched dielectric fill layer disposed on both sides of the fin along the length of the fin, the etched dielectric fill layer extending by a second height from the uppermost portion of the substrate, the second height being shorter than the first height, wherein the gate region is formed over the channel region and the etched dielectric fill layer.
9. The integrated circuit (IC) device of claim 8 wherein the substrate is silicon-on-insulator (SOI).
10. The integrated circuit (IC) device of claim 8 wherein the substrate is oxygen-implanted silicon (SIMOX).
11. The IC device of claim 8 wherein the crystalline semiconducting material is comprised substantially of silicon.
12. The IC device of claim 8 , wherein the difference between the first height and the second height is approximately 100 nm to 450 nm and the width of the fin is approximately 100 nm or less.
13. The IC device of claim 8 , wherein the thin dielectric layer is approximately 20 angstroms to 30 angstroms.