Generation of multiple diameter nanowire field effect transistors
A method of modifying a wafer having a semiconductor disposed on an insulator is provided and includes forming first and second nanowire channels connected at each end to semiconductor pads at first and second wafer regions, respectively, with second nanowire channel sidewalls being misaligned relative to a crystallographic plane of the semiconductor more than first nanowire channel sidewalls and displacing the semiconductor toward an alignment condition between the sidewalls and the crystallographic plane such that thickness differences between the first and second nanowire channels reflect the greater misalignment of the second nanowire channel sidewalls.
1. A wafer, comprising:
a substrate;
a buried oxide (BOX) layer disposed on the substrate; and
a silicon-on-insulator (SOI) structure disposed on the BOX layer at first and second regions, the SOI structure at the first region having a first pair of SOI pads, which are connected via first nanowire channels formed therein, and the SOI structure at the second region having a second pair of SOI pads, which are separate from the first pair of SOI pads and connected via second nanowire channels formed therein,
sidewalls of the nanowire channels at the first region being aligned with {110} planes of the SOI and sidewalls of the nanowire channels at the second region being misaligned with respect to any crystallographic plane, including the {110} planes of the SOI, by a predefined angle.
2. The wafer according to claim 1 , wherein the predefined angle is defined such that a profile of the nanowire channels at the second region encompasses a reshaped nanowire formable therefrom, a sidewall of which is aligned with the {110} planes of the SOI.
3. The wafer according to claim 1 , wherein the nanowire channels are parallel with one another at each of the first and second regions, respectively.
4. The wafer according to claim 1 , wherein the sidewalls of the nanowire channels at the first region are parallel with the {110} planes of the SOI and top faces of the nanowire channels at the first region are parallel with {100} planes of the SOI and the sidewalls of the nanowire channels at the second region are misaligned with respect to any crystallographic plane, including the {110} planes of the SOI, and top faces of the nanowire channels at the second region are parallel with the {100} planes of the SOI.