Methods of forming dielectric material-containing structures
Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
1. A method of forming a dielectric structure, comprising:
forming a first mixed phase dielectric over a base comprising semiconductor material; the first mixed phase dielectric comprising a first distribution of two oxides; one of said two oxides of the first distribution having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the first distribution having a dielectric constant of less than or equal to 20;
forming a single phase dielectric over and directly against the first mixed phase dielectric; the single phase dielectric consisting of a composition having a dielectric constant of greater than or equal to 25; and
forming a second mixed phase dielectric over and directly against the single phase dielectric; the second mixed phase dielectric comprising a second distribution of two oxides; one of said two oxides of the second distribution having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the second distribution having a dielectric constant of less than or equal to 20; the first and second mixed phase dielectrics being more amorphous than the single phase dielectric, and being different in composition from one another.
2. The method of claim 1 wherein the composition of the single phase dielectric is selected from the group consisting of ZrO, HfO, TaO, TiO and SrTiO; where the chemical formulas indicate the elements contained in the composition and do not imply any particular stoichiometry of such elements.
3. The method of claim 1 wherein the first and second mixed phase dielectrics consist of mixtures selected from the group consisting of ZrAlO, HfAlO, ZrSiO, HfSiO, ZrHfO, ZrTaO, HfTaO, ZrTiO, HfTiO, TaTiO, HfTaTiO and ZrTaTiO; where the chemical formulas indicate the elements contained in the mixture and do not imply any particular stoichiometry of such elements.
4. A method of forming a capacitor, comprising:
forming a first capacitor electrode over a substrate;
forming a first mixed phase dielectric over the first capacitor electrode with a first ALD pulse sequence utilizing metal precursors and oxidant; the mixed phase dielectric comprising a first distribution of two oxides; one of said two oxides of the first distribution having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the first distribution having a dielectric constant of less than or equal to 20;
forming a single phase dielectric over and directly against the first mixed phase dielectric; the single phase dielectric consisting of a composition having a dielectric constant of greater than or equal to 25;
forming a second mixed phase dielectric over and directly against the single phase dielectric with a second ALD pulse sequence utilizing metal precursors and oxidant; the second mixed phase dielectric comprising a second distribution of two oxides; one of said two oxides of the second distribution having a dielectric constant of greater than or equal to 25, and the other of said two oxides of the second distribution having a dielectric constant of less than or equal to 20; the first and second mixed phase dielectrics being more amorphous than the single phase dielectric, and being different in composition from one another; and
forming a second capacitor electrode over the second mixed phase dielectric.
5. The method of claim 4 wherein the composition of the single phase dielectric is selected from the group consisting of ZrO, HfO, TaO, TiO and SrTiO; where the chemical formulas indicate the elements contained in the composition and do not imply any particular stoichiometry of such elements.
6. The method of claim 4 wherein the first and second mixed phase dielectrics consist of mixtures selected from the group consisting of ZrAlO, HfAlO, ZrSiO, HfSiO, ZrHfO, ZrTaO, HfTaO, ZrTiO, HfTiO, TaTiO, HfTaTiO and ZrTaTiO; where the chemical formulas indicate the elements contained in the mixture and do not imply any particular stoichiometry of such elements.