Non-volatile storage system using opposite polarity programming signals for MIM memory cell
A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.
1. A non-volatile memory cell, comprising:
a first electrode;
a second electrode comprising a titanium-rich TiN material layer;
a carbon-nanotube reversible resistivity switching material between the first electrode and the second electrode, and in contact with the first electrode and the second electrode; and
TiC contacts between the titanium-rich TiN material layer and the carbon-nanotube reversible resistivity switching material, the TiC contacts comprise TiC material in which a carbon concentration is between about 1% to about 60%.
2. The non-volatile memory cell of claim 1 , wherein:
the TiC contacts comprise TixOyCzNv, where x+y+z+v=1, and any one or two of the following can be zero: y, v.
3. The non-volatile memory cell of claim 1 , wherein:
the first electrode comprises one or more of Ti, TiN, Ta, TaN, W, WN and Mo.
4. The non-volatile memory cell of claim 1 , wherein:
the carbon nanotube reversible resistivity switching material comprises carbon nanotubes which interface with the second electrode as a bottom electrode using side contact, and interface with the first electrode using end contact.
5. A non-volatile memory cell, comprising:
a first electrode;
a second electrode;
a carbon-based reversible resistivity switching material between the first electrode and the second electrode;
a metal oxide reversible resistivity switching material between the first electrode and the carbon-based reversible resistivity switching material; and
an additional metal oxide reversible resistivity switching material between the carbon-based reversible resistivity switching material and the second electrode.
6. The non-volatile memory cell of claim 5 , wherein:
the carbon-based reversible resistivity switching material and the metal oxide reversible resistivity switching material are respective films in a laminate.
7. The non-volatile memory cell of claim 5 , wherein:
the carbon-based reversible resistivity switching material comprises a carbon nanotube material.
8. The non-volatile memory cell of claim 5 , wherein:
the carbon-based reversible resistivity switching material is in contact with the metal oxide reversible resistivity switching material.
9. The non-volatile memory cell of claim 5 , wherein:
the first electrode is a metal layer in a metal-insulator-metal structure;
the second electrode is another metal layer in the metal-insulator-metal structure; and
the carbon-based reversible resistivity switching material and the metal oxide reversible resistivity switching material are insulator layers in the metal-insulator-metal structure.
10. The non-volatile memory cell of claim 5 , wherein:
one of the first and second electrodes comprises a titanium-rich TiN material layer.
11. A non-volatile memory cell, comprising:
a first electrode;
a second electrode comprising a titanium-rich TiN material layer; and
a carbon-nanotube reversible resistivity switching material between the first electrode and the second electrode, and in contact with the first electrode and the second electrode, wherein the carbon nanotube reversible resistivity switching material comprises carbon nanotubes which interface with the second electrode as a bottom electrode using side contact, and interface with the first electrode using end contact.
12. A non-volatile memory cell, comprising:
a first electrode;
a second electrode;
a carbon-based reversible resistivity switching material between the first electrode and the second electrode;
a metal oxide reversible resistivity switching material between the first electrode and the carbon-based reversible resistivity switching material; and
an additional carbon-based reversible resistivity switching material between the metal oxide reversible resistivity switching material and the first electrode.