Redistribution layer (RDL) with variable offset bumps

1. An integrated circuit (IC) chip comprising:

a semiconductor substrate having a plurality of metal vertical interconnect accesses (vias) in a back end of line (BEOL) layer;

a redistribution layer (RDL) on the BEOL layer, the BEOL layer having a plurality of bond pads, each bond pad connected to at least one corresponding metal via through the RDL; and

a solder bump connected to each bond pad, wherein each solder bump is laterally offset from the corresponding metal via connected to the bond pad towards a center of the IC chip by an offset distance, wherein the offset distance is non-uniform across the IC chip, and wherein the offset distance increases from solder bumps proximate to a center of the IC chip to solder bumps proximate to an edge of the IC chip.

2. The IC chip of claim 1 , wherein the offset distance incrementally increases from solder bumps proximate to a center of the IC chip to solder bumps proximate to an edge of the IC chip.

3. The IC chip of claim 1 , wherein the IC chip has multiple quadrants, and wherein the solder bumps within each quadrant have substantially equal offset distances.

4. The IC chip of claim 3 , wherein the offset distance for solder bumps in a quadrant proximate to an edge of the IC chip is larger than the offset distance of solder bumps in a quadrant in an interior of the IC chip.

5. The IC chip of claim 3 , wherein the offset distance of solder bumps in a quadrant proximate to an edge of the IC chip is approximately half of a bump pitch of the solder bumps in the quadrant proximate to the edge of the IC chip.

6. The IC chip of claim 1 , wherein an offset distance for a solder bump at the center of the IC chip is approximately 0.

7. The IC chip of claim 1 , wherein the offset distance for each solder bump is proportionate to a distance between the center of the IC chip and the center of the corresponding metal via for that solder bump.

8. An integrated circuit (IC) chip comprising:

a semiconductor substrate having a plurality of metal vertical interconnect accesses (vias) in a back end of line (BEOL) layer;

a redistribution layer (RDL) on the BEOL layer;

a plurality of bond pads on the RDL, each bond pad connected to a corresponding metal via through the RDL; and

a solder bump connected to each bond pad, wherein each solder bump is laterally offset from the corresponding metal via connected to the bond pad towards a center of the IC chip by an offset distance, wherein the offset distance for each solder bump is proportionate to a distance between the center of the IC chip and the center of the corresponding metal via for that solder bump.

9. The IC chip of claim 8 , wherein an offset distance for the solder bump at the center of the IC chip is approximately 0.

10. The IC chip of claim 8 , wherein the RDL comprises an aluminum or copper layer.

11. The IC chip of claim 8 , wherein the offset distance for solder bumps proximate to an edge of the IC chip is larger than the offset distance of solder bumps in an interior of the IC chip.

12. The IC chip of claim 8 , wherein the offset distance for each solder bump is determined by a placement algorithm comprising:

OD=BP/ 2*( D 1 /D max )

where OD is the offset distance, BP is a desired bump pitch for the IC chip, D 1 is a distance from the chip center to a particular solder bump, and D max is a maximum distance from the chip center to a solder bump at a corner of the IC chip.

13. The IC chip of claim 8 , wherein the offset distance of a solder bump proximate to an edge of the IC chip is approximately half of a desired bump pitch of the solder bumps on the IC chip.

14. A method for non-uniformly offsetting solder bumps on an integrated circuit (IC) chip, the method comprising:

providing a semiconductor substrate having a plurality of metal vertical interconnect accesses (vias) in a back end of line (BEOL) layer;

forming a redistribution layer (RDL) on the BEOL layer;

forming a plurality of bond pads on the RDL, each bond pad connected to a corresponding metal via through the RDL; and

positioning a solder bump on each solder bump pad structure such that each solder bump is laterally offset from the corresponding metal via connected to the bond pad towards a center of the IC chip by an offset distance, wherein the offset distance is non-uniform across the IC chip, and wherein the offset distance for solder bumps proximate to an edge of the IC chip is larger than the offset distance of solder bumps in an interior of the IC chip.

15. The method of claim 14 , wherein the offset distance for each solder bump is proportionate to a distance between the center of the IC chip and the center of the corresponding metal via for that solder bump.

16. The method of claim 14 , wherein an offset distance for a solder bump at the center of the IC chip is approximately 0.

17. The method of claim 14 , wherein the positioning includes using a placement algorithm to determine the offset distance for each solder bump, wherein the placement algorithm comprises:

OD=BP/ 2*( D 1 /D max )

where OD is the offset distance, BP is a desired bump pitch for the IC chip, D 1 is a distance from the chip center to a particular solder bump, and D max is a maximum distance from the chip center to a solder bump at a corner of the IC chip.

18. The method of claim 14 , wherein the offset distance of a solder bump proximate to an edge of the IC chip is approximately half of a desired bump pitch of the solder bumps on the IC chip.

19. The method of claim 14 , wherein the positioning includes incrementally increasing an offset distance from solder bumps proximate to a center of the IC chip to solder bumps proximate to an edge of the IC chip.