Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain

1. A method for fabricating an upside-down p-FET on a donor substrate as part of an integrated circuit device, said method comprising:

providing the donor substrate comprising a silicon substrate, a buried oxide, and a single-crystal silicon-on-insulator layer;

forming a gate over a channel region in the donor substrate, said gate comprising a thin gate dielectric layer over the silicon-on-insulator layer and a gate conductor line over said thin gate dielectric layer;

providing spacers adjoining the gate conductor line;

fully etching a plurality of source and drain regions in the donor substrate by:

etching the silicon-on-insulator layer through the buried oxide and partially etching the silicon substrate; and

forming a trench with crystal plane sidewalls;

forming self-terminating e-SiGe source and drain regions by refilling the trench with epitaxial SiGe, wherein said e-SiGe source and drain regions are self-terminating to prevent excess film growth, such that a surface of said e-SiGe source and drain regions is left non-reactive at exposure;

capping the e-SiGe source and drain regions with self-aligning silicide/germanide;

providing a first stress liner deposited over the gate and the e-SiGe source and drain regions;

depositing a planarized dielectric over the first stress liner;

inverting the donor substrate;

bonding the donor substrate to a host wafer; and

selectively exposing the buried oxide and the e-SiGe source and drain regions by removing the donor substrate.

2. The method of claim 1 , further comprising inducing compressive strain in the channel by applying a second stress liner over the exposed buried oxide and the e-SiGe source and drain regions.

3. The method of claim 1 wherein depositing the planarizing dielectric comprises allowing a low-k dielectric to form over the e-SiGe source and drain regions.

4. The method of claim 1 further comprising: forming self-aligning silicide/germanide on exposed sidewalls of the e-SiGe source and drain regions after selectively exposing said e-SiGe source and drain regions.

5. The method of claim 4 , wherein forming the self-aligning silicide/germanide on the exposed sidewalls of the e-SiGe source and drain regions comprises:

depositing a blanket metal over the buried oxide and the e-SiGe source and drain regions; reacting said metal to form silicide/germanide; and

etching unreacted metal from the buried oxide.