Changing effective work function using ion implantation during dual work function metal gate integration

1. A method comprising:

forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region;

forming a single metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and

changing the first effective work function to a second, different effective work function over the second-type FET region by implanting an aluminum (Al) species into the single metal layer over the second-type FET region, wherein the changing results in a greater than 50 milli-Volt shift in a threshold voltage of the second-type FET and wherein the aluminum species diffuses into the high dielectric constant layer.

2. The method of claim 1 , further comprising forming the first-type FET over the first-type FET region and a second-type FET over the second-type FET region.

3. The method of claim 1 , further comprising forming a silicon layer over the metal layer prior to the changing, wherein the implanting includes implanting the aluminum species into the silicon.

4. The method of claim 1 , wherein the metal layer is selected from the group consisting of: tungsten (W), tantalum (Ta), aluminum (Al), ruthenium (Ru), platinum (Pt), titanium nitride (TiN), tantalum nitride (TaN), nickel silicide (NiSi), nickel-platinum silicide (NiPtSi), titanium carbide (TiC), tantalum carbide (TaC), tantalum carbide oxynitride (TaCNO), ruthenium oxide (RuO 2 ), and mixtures and multi-layers thereof.

5. The method of claim 1 , wherein the changing includes masking the first-type FET region.

6. The method of claim 1 , wherein the changing further includes annealing.

7. The method of claim 6 , wherein the annealing is part of a source/drain region forming for the first-type and second-type FETs.

8. The method of claim 1 , further comprising forming a gate dielectric layer prior to forming the high-k layer.

9. A method comprising:

forming a high dielectric constant (high-k) layer and a single metal layer over the high-k layer, the single metal layer having a first effective work function;

changing the first effective work function to a second, different effective work function in a region by implanting an aluminum (Al) species into the single metal layer over the region; and

forming a first-type FET compatible with the first effective work function over an area outside the region and forming a second-type FET compatible with the second effective work function over the region, wherein the changing results in a greater than 50 milli-Volt shift in a threshold voltage of the second-type FET and wherein the aluminum species diffuses into the high dielectric constant layer.

10. The method of claim 9 , further comprising forming a polysilicon layer over the metal layer prior to the changing, wherein the implanting includes implanting the aluminum species into the polysilicon.

11. The method of claim 9 , wherein the metal layer is selected from the group consisting of: tungsten (W), tantalum (Ta), aluminum (Al), ruthenium (Ru), platinum (Pt), titanium nitride (TiN), tantalum nitride (TaN), nickel silicide (NiSi), nickel-platinum silicide (NiPtSi), titanium carbide (TiC), tantalum carbide (TaC), tantalum carbide oxynitride (TaCNO), ruthenium oxide (RuO 2 ), and mixtures and multi-layers thereof.

12. The method of claim 9 , wherein the changing includes masking the area outside of the region.

13. The method of claim 9 , wherein the first-type and second-type FET formings include annealing.

14. The method of claim 13 , wherein the annealing is part of a source/drain region forming for the first-type and second-type FETs.