IP Library › Granted Patent US 8,912,030
Granted Patent B2
US 8,912,030 · App. 13/647,547 · Granted Dec 16, 2014

Method for radiation monitoring

Inventors: Jin Cai (Cortlandt Manor, NY); Effendi Leobandung (Wappingers Falls, NY); Tak H. Ning (Yorktown Heights, NY); Jeng-Bang Yau (Yorktown Heights, NY)
Assignee: International Business Machines Corporation
H01L27/14H01L27/14689H01L31/0312H01L21/02H01L31/0304H01L31/028
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Quick Facts
Patent No.
US 8,912,030
App. No.
13/647,547
Granted
Dec 16, 2014
Kind
B2
Abstract

A radiation dosimeter includes a semiconductor substrate and a buried insulator layer disposed on the semiconductor substrate. The buried insulator layer has a plurality of charge traps. A semiconductor layer is disposed on the buried insulator layer. The semiconductor layer has an emitter, an intrinsic base, and a collector laterally arranged with respect to one another. In response to radiation exposure by the radiation dosimeter, positive charges are trapped in the plurality of charge traps in the buried insulator layer, the amount of positive charge trapped being used to determine the amount of radiation exposure. A method for radiation dosimetry includes providing a radiation dosimeter, where the radiation dosimeter includes a lateral silicon-on-insulator bipolar junction transistor having a buried insulator layer; exposing the radiation dosimeter to ionizing radiation; determining a change in one of the collector current and current gain of the radiation dosimeter; and determining an amount of the radiation dose based on the change in one of the collector current and current gain.

Claims (17)

1. A method for radiation monitoring, said method comprising:

providing a radiation dosimeter, said radiation dosimeter including a semiconductor substrate; a buried insulator layer disposed on said semiconductor substrate, said buried insulator layer comprising a plurality of charge traps; and a semiconductor layer disposed on said buried insulator layer, said semiconductor layer having an emitter, an intrinsic base, and a collector laterally arranged with respect to one another, and an extrinsic base in electrical contact with said intrinsic base;

exposing said radiation dosimeter to ionizing radiation;

determining a change in one of the collector current and the current gain of said radiation dosimeter; and

determining an amount of the radiation dose based on the change in one of the collector current and the current gain.

2. The method as claimed in claim 1 , further comprising the step of applying a positive back gate voltage to a substrate of said bipolar junction transistor.

3. The method as claimed in claim 1 , wherein the change in one of the collector current and the current gain is determined for a preselected value of a biasing voltage of a base/emitter junction of said bipolar junction transistor.

4. The method as claimed in claim 3 , wherein one of the collector current and the current gain is determined before and after the radiation dosimeter is exposed to ionizing radiation and the change in one of the collector current and the current gain is obtained by calculating the difference.

5. The method as claimed in claim 2 , wherein the back gate voltage is applied to a back contact, said back contact being electrically connected to a semiconductor substrate of the bipolar junction transistor.

6. The method as claimed in claim 1 , wherein one of the collector current and the current gain increases based on the amount of positive charge trapped in a buried insulator layer of the bipolar junction transistor.

7. The method as claimed in claim 1 , further comprising placing said radiation dosimeter inside a body to determine a dose of radiation received by the body.

8. The method as claimed in claim 7 , wherein said radiation dosimeter is placed proximate to a tumor in the body to determine a dose of radiation received by the tumor.

9. The method as claimed in claim 1 , further comprising placing said radiation dosimeter proximate to a body to determine a dose of radiation received by the body during medical imaging.

10. The method as claimed in claim 1 , further comprising placing at least one filter layer between the radiation dosimeter and a source of the radiation.

11. The method as claimed in claim 10 , wherein said at least one filter layer prevents some of the radiation from passing through the radiation dosimeter.

12. The method as claimed in claim 10 , wherein said at least one filter layer makes the radiation dosimeter more or less sensitive to some component of the radiation.

13. The method as claimed in claim 1 , further comprising incorporating the radiation dosimeter into one of an automobile, a building, an air filter, a portable electronic device, such as a computer, cell phone, music player, PDA or GPS, a passport, credit card, or driver license.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded May 12, 2021
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 056987/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES INC.
Reel/Frame 054636/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2020
From: GLOBALFOUNDRIES INC.
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 054633/0001 →
SECURITY AGREEMENT Recorded Nov 29, 2018
From: GLOBALFOUNDRIES INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 049490/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2015
From: GLOBALFOUNDRIES U.S. 2 LLC; GLOBALFOUNDRIES U.S. INC.
To: GLOBALFOUNDRIES INC.
Reel/Frame 036779/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2015
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: GLOBALFOUNDRIES U.S. 2 LLC
Reel/Frame 036550/0001 →
Continuity (2)
Continuation 13625440 · Sep 24, 2012
Related Publication 20140088401A1 · Mar 27, 2014