Vertical semiconductor charge storage structure
A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.
1. A vertical semiconductor charge storage structure, comprising:
a substrate, including a plurality of electrical contacts arranged in an array;
a plurality of lower electrodes respectively corresponding to and electrically connecting to the plurality of contacts, each of the plurality of lower electrodes comprising a lower conductor electrically connected with the at least one electrical contact, a first side conductor disposed at one end of the lower conductor, and a second side conductor disposed at another end of the lower conductor; wherein the first side conductors and the second side conductors are interlaced and parallel to each other and form an included angle with the lower conductor; wherein the first side conductors are formed at a height greater than that of the second side conductors;
a dielectric layer, formed on surfaces of the substrate and the plurality of lower electrodes; and
an upper electrode, formed on a surface of the dielectric layer away from the substrate and the plurality of lower electrodes.
2. The vertical semiconductor charge storage structure of claim 1 , wherein the included angle is 90 degrees to allow the first side conductor and the second side conductor perpendicular to the lower conductor.
3. The vertical semiconductor charge storage structure of claim 1 , wherein the lower electrode and the upper electrode are made of a material selected from the group consisting of titanium nitride, tantalum nitride and combination thereof.
4. The vertical semiconductor charge storage structure of claim 1 , wherein the dielectric layer is made of a material selected from the group consisting of hafnium oxide, aluminum oxide, zirconium oxide, lanthanum oxide and combinations thereof.