IP Library Granted Patent US 9,024,442
Granted Patent B2
US 9,024,442 · App. 13/508,864 · Granted May 5, 2015

Solder ball for semiconductor packaging and electronic member using the same

Inventors: Shinichi Terashima (Tokyo, JP); Masamoto Tanaka (Tokyo, JP); Katsuichi Kimura (Saitama, JP)
Assignees: Nippon Steel & Sumikin Materials Co., Ltd.; Nippon Micrometal Corporation
B23K35/262C22C13/00H01L23/3114H01L24/13H01L24/81H01L2224/0401H01L2224/05082H01L2224/05083H01L2224/11334H01L2224/13099H01L2224/13111H01L2224/13688H01L2224/81801H01L2924/01004H01L2924/01012H01L2924/01013H01L2924/01025H01L2924/01029H01L2924/0103H01L2924/01049H01L2924/01051H01L2924/01057H01L2924/01058H01L2924/01079H01L2924/01082H01L2924/351H01L2924/3512H01L2924/3651H01L2924/37H05K3/3436H05K3/3463H05K2203/041H01L2924/01006H01L2924/01033H01L2924/01047H01L2924/01074H01L2924/01322H01L2924/014H01L2224/13005H01L2924/01327H01L2924/00013H01L23/49816H01L23/49866H01L2924/10253
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Quick Facts
Patent No.
US 9,024,442
App. No.
13/508,864
Granted
May 5, 2015
Kind
B2
Abstract

The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

Claims (20)

1. A solder ball for semiconductor packaging made of a solder alloy containing:

Sn as a main element;

0.1-2.5% Ag by mass;

0.1-1.5% Cu by mass; and

at least one of Mg and Zn in a total amount of 0.0001-0.005% by mass, wherein said solder ball includes a surface comprising a noncrystalline phase of a thickness of 1-50 nm, said noncrystalline phase containing: at least one of Mg and Zn; O; and Sn.

2. The solder ball for semiconductor packaging according to claim 1 , wherein said solder alloy contains Ag in a concentration of 0.5-1.9% by mass.

3. The solder ball for semiconductor packaging according to claim 1 , wherein said solder alloy further contains 0.01-5% by mass of Bi.

4. The solder ball for semiconductor packaging according to claim 1 , wherein said solder alloy further contains at least one of Ni, P, Sb, Ce, La, Co, Fe and In in a total amount of 0.0005 to 0.5% by mass.

5. An electronic member comprising:

solder-bonded sections, wherein at least one of said solder-bonded sections is formed using the solder ball for semiconductor packaging according to claim 1 .

6. A solder ball for semiconductor packaging made of a solder alloy containing:

Sn as a main element;

0.1-1.9% Ag by mass;

0.1-1.0% Cu by mass; and

at least one of Mg and Zn in a total amount of 0.0001-0.005% by mass, wherein said solder ball includes a surface comprising a noncrystalline phase of a thickness of 1-50 nm, said noncrystalline phase containing: at least one of Mg and Zn; O; and Sn.

7. The solder ball for semiconductor packaging according to claim 6 , wherein said solder alloy contains Ag in a concentration of 0.5-1.9% by mass.

8. The solder ball for semiconductor packaging according to claim 6 , wherein said solder alloy further contains 0.01-5% by mass of Bi.

9. The solder ball for semiconductor packaging according to claim 6 , wherein said solder alloy further contains at least one of Ni, P, Sb, Ce, La, Co, Fe and In in a total amount of 0.0005 to 0.5% by mass.

10. An electronic member comprising:

solder-bonded sections, wherein at least one of said solder-bonded sections is formed using the solder ball for semiconductor packaging according to claim 6 .

Assignments (5)
CHANGE OF ADDRESS Recorded Nov 22, 2019
From: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
To: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
Reel/Frame 051095/0147 →
MERGER AND CHANGE OF NAME Recorded Mar 20, 2019
From: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.; NIPPON STEEL & SUMIKIN CHEMICAL CO., LTD.
To: NIPPON STEEL CHEMICAL & MATERIAL CO., LTD.
Reel/Frame 048646/0491 →
CHANGE OF ADDRESS Recorded Mar 12, 2015
From: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
To: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
Reel/Frame 035186/0951 →
CHANGE OF NAME Recorded Dec 10, 2012
From: NIPPON STEEL MATERIALS CO., LTD.
To: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
Reel/Frame 029434/0177 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2012
From: TERASHIMA, SHINICHI; TANAKA, MASAMOTO; KIMURA, KATSUICHI
To: NIPPON STEEL MATERIALS CO., LTD.; NIPPON MICROMETAL CORPORATION
Reel/Frame 028181/0604 →
Priority Claims (1)
JP 2010-182934 · Aug 18, 2010 · national
Continuity (1)
Related Publication 20120223430A1 · Sep 6, 2012