Thermal energy dissipation using backside thermoelectric devices
Embodiments of the present invention provide a semiconductor structure and method to dissipate heat generated by semiconductor devices by utilizing backside thermoelectric devices. In certain embodiments, the semiconductor structure comprises an electronic device formed on a first side of the semiconductor structure. The semiconductor structure also comprises a thermoelectric cooling device formed on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction. In other embodiments, the method comprises forming an electronic device on a first side of a semiconductor structure. The method also comprises forming a thermoelectric cooling device on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction.
1. A semiconductor structure comprising:
a buried dielectric layer including a first side and a second side opposite the first side;
a first side portion located over the first side of the buried dielectric layer;
a second side portion located over the second side of the buried oxide layer; and
a thermoelectric cooling device;
wherein:
the first side portion includes integrated circuit type circuitry;
the thermoelectric cooling device includes a first Peltier junction located in, and forming a part of, the second side portion; and
the second side portion is at least substantially free of integrated circuit type circuitry.
2. The semiconductor structure of claim 1 , wherein:
the thermoelectric cooling device includes a plurality of Peltier junctions, including the first Peltier junction; and
all Peltier junctions of the plurality of Peltier junctions are located in, and form part of, the second side portion.
3. The semiconductor structure of claim 2 , wherein the thermoelectric cooling device includes two or more Peltier junctions that are connected by TiN/Al, aluminum, and/or Ti/Cu.
4. The semiconductor structure of claim 2 , wherein:
the thermoelectric cooling device further includes a plurality of through silicon vias and a plurality of contacts;
the plurality of Peltier junctions is configured to be energized using the plurality of through silicon vias;
the plurality of contacts are located in, and form a part of, the first side portion;
the through silicon via extends from the plurality of Peltier junctions to the plurality of contacts.
5. The semiconductor structure of claim 2 , wherein:
the second side portion further includes polyimide or insulator material; and
the plurality of Peltier junctions of the thermoelectric cooling device are formed in the polyimide or insulator material.
6. The semiconductor structure of claim 4 , wherein:
each contact of the plurality of contacts includes a bond pad and/or a metal contact formed in the second portion of the semiconductor structure in proximity to at least one silicon via of the plurality of silicon vias; and
the Peltier junctions of the plurality of Peltier junctions are electrically coupled with one or more bond pad and/or metal contact.
7. The semiconductor structure of claim 1 , wherein the second side portion further includes a heat sink located proximate to the first Peltier junction.
8. The semiconductor structure of claim 7 , wherein the heat sink is affixed to the semiconductor structure using a thermal interface material.
9. The semiconductor structure of claim 1 , wherein the second side portion is free of integrated circuit type components.
10. The semiconductor structure of claim 7 , wherein the heat sink includes a low-k dielectric material and/or conducting material.
11. The semiconductor structure of claim 1 , wherein the integrated circuit type circuitry of the first side portion includes a first field effect transistor.
12. The semiconductor structure of claim 1 , wherein first Peltier junction the thermoelectric cooling device includes n-type and p-type semiconductor material.
13. A method for making a semiconductor structure on a buried dielectric layer including a first side and a second side opposite the first side, the method comprising:
forming a thermoelectric cooling device;
forming a first side portion located over the first side of the buried dielectric layer, with the first side portion including integrated circuit type circuitry; and
forming a second side portion located over the second side of the buried dielectric layer, with the second side portion with the second side portion being at least substantially free of integrated circuit type circuitry;
wherein the thermoelectric cooling device includes a first Peltier junction which is located in the second side portion.
14. The method of claim 13 , wherein the thermoelectric cooling device is configured to be energized using a through silicon via that extends from the second side portion to the first side portion of the semiconductor structure.
15. A method of making a semiconductor structure, the method comprising:
providing a first semiconductor sub-structure including:
a buried dielectric layer including a first side and a second side opposite the first side,
a first side portion located over the first side of the buried dielectric layer,
a second side portion located over the second side of the buried oxide layer, and
a thermoelectric cooling device,
wherein:
the first side portion includes integrated circuit type circuitry,
the thermoelectric cooling device includes a plurality of Peltier junctions located in, and forming a part of, the second side portion, and
the second side portion is at least substantially free of integrated circuit type circuitry;
providing a second semiconductor sub-structure including integrated circuit type circuitry; and
attaching the first semiconductor sub-structure and the second semiconductor sub-structure to each other so that the second semiconductor sub-structure is attached to the second side portion of the first semiconductor sub-structure to form the semiconductor structure.
16. The method of claim 15 wherein:
the first semiconductor sub-structure includes a heat sink;
the heat sink is located to be proximate to at least some of the Peltier junctions, of the plurality of Peltier junctions, when the first and second semiconductor sub-structures are attached to each other.
17. The method of claim 15 wherein:
the first semiconductor sub-structure includes a heat sink;
the heat sink is located on a surface of the first semiconductor sub-structure which is an exterior surface before the first and second semiconductor sub-structures are attached to each other.
18. The method of claim 15 wherein the second side portion of first semiconductor sub-structure is free of integrated circuit type circuitry.
19. The semiconductor structure of claim 1 wherein the second side portion further includes a bonding structure suitable for bonding the semiconductor structure to a second semiconductor structure to form a chip stack.
20. The method of claim 13 wherein the second side portion further includes a bonding structure suitable for bonding the semiconductor structure to a second semiconductor structure to form a chip stack.