Low k porous SiCOH dielectric and integration with post film formation treatment
A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CH x )— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.
1. A method of fabricating a porous dielectric film comprising:
forming a dielectric film comprising elements of Si, C, H and O on a surface of a substrate, said dielectric film having a dielectric constant of about 2.7 or less, a random covalently bonded tri-dimensional network and a multiplicity of nano-sized pores having a pore size from about 0.3 nm to 10 nm, wherein Si—OH groups are present within the pores of said dielectric film; and
annealing said dielectric film in a Si-containing gaseous ambient selected from the group consisting of tetramethyl divinyl disiloxane, dimethyl tetravinyl disiloxane, hexavinyl disiloxane, divinyl methyl silanol, and diethyl vinyl silanol, wherein said annealing forms crosslinking —(CH x )— chains within the pores that bond with at least one Si originally present in at least one of said Si—OH groups, wherein x is 1,2 or 3, provides a hydrocarbon content within said pores and on said surface of from about 0.1 to 10 wt. %.
2. The method of claim 1 wherein said forming said dielectric film comprises a deposition step and a post-deposition processing step that removes labile functional groups from an initial film deposited by said deposition step.
3. The method of claim 2 wherein said annealing occurs during said post-deposition processing step, after said post-deposition processing step, or during and after said post-deposition processing step.
4. The method of claim 1 wherein said annealing includes a thermal anneal, an ultraviolet (UV) anneal, a plasma anneal, a microwave anneal or any combination thereof.
5. The method of claim 2 wherein said deposition step includes a plasma enhanced chemical vapor deposition process.
6. A method of forming a porous dielectric material comprising:
forming a dielectric film comprising elements of Si, C, H and O on a surface of a substrate, said dielectric film having a dielectric constant of about 2.7 or less and a random covalently bonded tri-dimensional network;
treating said dielectric film to form a multiplicity of nano-sized pores having a pore size from about 0.3 nm to 10 nm therein, wherein Si—OH groups are present within said pores of said dielectric film; and
annealing said treated dielectric film in a Si-containing gaseous ambient selected from the group consisting of tetramethyl divinyl disiloxane, dimethyl tetravinyl disiloxane, hexavinyl disiloxane, divinyl methyl silanol, and diethyl vinyl silanol, group, wherein said annealing forms crosslinking —CH x )— chains within the pores that bond with at least one Si originally present in at least one of said Si—OH groups, wherein x is 1,2 or 3, and provides a hydrocarbon content within said pores and on said surface of from about 0.1 to 10 wt. %.
7. The method of claim 6 wherein said annealing includes a thermal anneal, an ultraviolet (UV) anneal, a plasma anneal, a microwave anneal or any combination thereof.
8. A method of forming a porous dielectric material comprising:
forming a dielectric film comprising elements of Si, C, H and O on a surface of a substrate, said dielectric film having a dielectric constant of about 2.7 or less and a random covalently bonded tri-dimensional network;
treating said dielectric film to form a multiplicity of nano-sized pores having a pore size from about 0.3 nm to 10 nm therein, wherein Si—OH groups are present in said pores of said dielectric film, wherein during said treating an annealing step is performed in a Si-containing gaseous ambient selected from the group consisting of tetramethyl divinyl disiloxane, dimethyl tetravinyl disiloxane, hexavinyl disiloxane, divinyl methyl silanol, and diethyl vinyl silanol, wherein said annealing forms crosslinking —(CH x )— chains with in the pores that bond with at least one Si originally present in at least one of said Si—OH groups, wherein x is 1, 2 or 3, and provides a hydrocarbon content within said pores and on said surface of from about 0.1 to 10 wt. %.
9. The method of claim 8 wherein said annealing includes a thermal anneal, an ultraviolet (UV) anneal, a plasma anneal, a microwave anneal or any combination thereof.