Magnetic random access memory with perpendicular enhancement layer
The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.
1. A magnetic tunnel junction (MTJ) memory element comprising:
a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof;
an insulating tunnel junction layer formed adjacent to said magnetic free layer structure;
a magnetic reference layer structure including a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer, said first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof;
an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said perpendicular enhancement layer;
a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer having a second fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to said first fixed magnetization direction; and
a seed layer formed adjacent to said magnetic fixed layer opposite said anti-ferromagnetic coupling layer.
2. The MTJ memory element according to claim 1 , wherein said seed layer is made of a material comprising nickel and a transition metal with said transition metal being tantalum, chromium, titanium, zirconium, hafnium, vanadium, niobium, molybdenum, or tungsten.
3. The MTJ memory element according to claim 1 , wherein said seed layer is made of a material comprising cobalt and a transition metal with said transition metal being tantalum, chromium, titanium, zirconium, hafnium, vanadium, niobium, molybdenum, or tungsten.
4. The MTJ memory element according to claim 1 , wherein said seed layer is made of a material comprising iron and a transition metal with said transition metal being tantalum, chromium, titanium, zirconium, hafnium, vanadium, niobium, molybdenum, or tungsten.
5. The MTJ memory element according to claim 1 , wherein said seed layer is made of a material comprising nickel and tantalum.
6. The MTJ memory element according to claim 1 , wherein said second magnetic reference layer includes a first magnetic reference sublayer formed adjacent to said perpendicular enhancement layer and a second magnetic reference sublayer formed adjacent to said anti-ferromagnetic coupling layer.
7. The MTJ memory element according to claim 6 , wherein said first magnetic reference sublayer is made of cobalt.
8. The MTJ memory element according to claim 6 , wherein said first magnetic reference sublayer is made of a material comprising cobalt and iron.
9. The MTJ memory element according to claim 6 , wherein said second magnetic reference sublayer is made of a material comprising cobalt and platinum.
10. The MTJ memory element according to claim 6 , wherein said second magnetic reference sublayer is made of a material comprising iron and platinum.
11. The MTJ memory element according to claim 6 , wherein said second magnetic reference sublayer is made of a material comprising cobalt, chromium, and platinum.
12. The MTJ memory element according to claim 6 , wherein said second magnetic reference sublayer has a multilayer structure formed by interleaving layer(s) of a first type material with layer(s) of a second type material, at least one of said first and second materials being magnetic.
13. The MTJ memory element according to claim 12 , wherein said first type material is Co or CoFe.
14. The MTJ memory element according to claim 12 , wherein said second type material is Ni, Pd, Pt, or any combination thereof.
15. The MTJ memory element according to claim 12 , wherein said multilayer structure is [Co/Ni] or [Co/Pt].
16. The MTJ memory element according to claim 1 , wherein said magnetic fixed layer has a multilayer structure formed by interleaving layer(s) of a first type material with layer(s) of a second type material, at least one of said first and second materials being magnetic.
17. The MTJ memory element according to claim 16 , wherein said first type material is Co or CoFe.
18. The MTJ memory element according to claim 16 , wherein said second type material is Ni, Pd, Pt, or any combination thereof.
19. The MTJ memory element according to claim 16 , wherein said multilayer structure is [Co/Ni] or [Co/Pt].
20. The MTJ memory element according to claim 1 , wherein said perpendicular enhancement layer is made of tantalum, hafnium, zirconium, molybdenum, or tungsten.
21. The MTJ memory element according to claim 1 , wherein said first magnetic reference layer is made of a material comprising cobalt, iron, and boron.