Asymmetric field effect transistor cap layer
A device includes a field effect transistor on an insulating film. A first fin extends vertically from a top side of a horizontal surface of a semiconductor substrate. An epitaxial cap rests on the first fin, with a left vertex on a left side of the epitaxial cap at a first horizontal distance from a reference line that vertically bisects the first fin, and a right vertex on the right side of the epitaxial cap at a second horizontal distance from the reference line, the first horizontal distance being at least twenty percent greater than the second horizontal distance; and a top vertex is at a third horizontal distance to the left of the reference line.
1. A device comprising:
a fin field effect transistor (finFET) that includes:
an insulating film on a horizontal surface of a semiconductor substrate, the insulating film having a top side with a first slope that is substantially parallel to the horizontal surface;
a first fin that extends vertically from the insulating film, the first fin having a reference line that extends vertically from the top side and that bisects the first fin; and
an epitaxial cap on the fin and made of a first material and having:
a left vertex on a left side of the epitaxial cap and at a first horizontal distance from the reference line;
a right vertex on a right side of the epitaxial cap and at a second horizontal distance from the first reference line, wherein the first horizontal distance is at least twenty percent greater than the second horizontal distance; and
a top vertex that is at a third horizontal distance to the left of the reference line, wherein a recessed region of the insulating film has a graded recess profile below the first slope.
2. The device of claim 1 , further comprising a strain-inducing layer made of a second material and positioned on top of the epitaxial cap to strain the first fin.
3. The device of claim 2 , wherein the second material is selected from the group consisting of a metal silicide, a silicon carbon alloy, and doped silicon.
4. The device of claim 1 , wherein the first horizontal distance plus the second horizontal distance are greater than a fin pitch for the finFET.
5. The device of claim 1 , wherein the graded recess profile is deeper near the first fin than near a second fin, having a second slope no less than 0.5 degrees and no more than ten degrees.
6. The device of claim 5 , wherein the second slope is no less than 1 degree and no more than 5 degrees.
7. The device of claim 1 , wherein the first material includes at least one element selected from the group consisting of silicon, germanium, carbon, boron, phosphorus, and arsenic.
8. The device of claim 1 , wherein the epitaxial cap induces a shear strain in the fin.
9. The device of claim 1 , wherein the epitaxial cap induces a torsional shear strain in the fin.