Three-dimensional non-volatile memory device
A memory device includes a stack of material layers with a plurality of NAND strings extending through the stack, and a trench through the stack with a pair of sidewalls defining a width of the trench that is substantially constant or decreases from the top of the trench to a first depth and increases between a first depth and a second depth that is closer to the bottom of the trench than the first depth and the trench has an insulating material covering at least the trench sidewalls. Further embodiments include a memory device including a stack of material layers and an active memory cell region defined between a pair of trenches, and within the active region the stack comprises alternating layers of a first material and a second material, and outside of the active region the stack comprises alternating layers of the first material and a third material.
1. A memory device, comprising:
a stack of alternating material layers over a substrate;
a first trench extending through the stack having an insulating material over at least one sidewall of the first trench;
a second trench extending through the stack and having an insulating material over at least one sidewall of the second trench;
a plurality of NAND memory strings extending through the stack in an active memory cell region defined between the first trench and the second trench, each NAND memory string comprising:
a first portion of a semiconductor channel which extends substantially perpendicular to a major surface of the substrate; and
at least one memory film located adjacent to the first portion of the semiconductor channel,
wherein in the active memory cell area, the stack comprises alternating layers of a first material and a second material different from the first material, and the second material forms a plurality of conductive control gate electrodes that extend adjacent to the at least one memory film in the NAND memory strings, and
outside of the active memory cell area, at least a portion of the stack comprises alternating layers of the first material and a third material different from the first material and the second material,
wherein at least one of the first trench and the second trench comprises an electrically conductive source line in electrical contact with a source region in a second portion of the semiconductor channel extending substantially parallel to the major surface of the substrate, and the insulating material along the at least one sidewall of the trench is located between the source line and the control gate electrodes.
2. The memory device of claim 1 , wherein the first material comprises silicon oxide and the second material comprises at least one of tungsten, tungsten silicide, tungsten nitride, titanium, titanium silicide and titanium nitride.
3. The memory device of claim 1 , wherein the at least one memory film comprises a blocking dielectric, a charge trapping layer or floating gate, and a tunnel dielectric, and the memory film is located between the first portion of the semiconductor channel and the second material in the stack.
4. The memory device of claim 1 , wherein the second portion of the semiconductor channel is substantially continuous with the plurality of NAND strings.
5. The memory device of claim 1 , wherein the source region comprises a doped portion in the second portion of the semiconductor channel.
6. The memory device of claim 1 , wherein the source line comprises at least one of titanium, titanium nitride, tungsten and tungsten nitride.
7. The memory device of claim 1 , wherein the first material comprises an insulating material and the second material comprises at least one of a metal, a metal silicide and a metal nitride.
8. The memory device of claim 7 , wherein the third material comprises polysilicon and wherein each of the plurality of control gate electrodes comprises polysilicon or polysilicon and at least one of the metal, the metal silicide and the metal nitride outside of the active memory cell area and comprises at least one of the metal, the metal silicide and the metal nitride in the memory cell area.
9. The memory device of claim 1 , further comprising:
a select gate electrode that extends substantially parallel to the major surface of the substrate, wherein the select gate electrode is located in a source select transistor in each of the plurality of NAND strings.
10. The memory device of claim 9 , wherein the NAND strings comprise a plurality of memory device levels, each device level of the plurality of device levels containing a respective one of the plurality of control gate electrodes, and the source select transistor is located below the memory device levels.
11. The memory device of claim 10 , wherein each of the plurality of NAND strings further comprises a respective one of a plurality of drain select transistors located above the memory device levels.
12. A memory device, comprising:
a stack of alternating layers of a first material and a second material different from the first material over a substrate, wherein the layers of the second material form a plurality of conductive control gate electrodes;
a plurality of NAND memory strings extending through the stack, wherein each NAND memory string comprises:
a semiconductor channel which contains at least a first portion which extends substantially perpendicular to a major surface of the substrate; and
at least one memory film located between the semiconductor channel and the plurality of conductive control gate electrodes; and
a trench formed through the stack and having a pair of sidewalls defining a width of the trench, the trench having a depth dimension along a direction between a top of the trench and a bottom of the trench proximate to the substrate, and a width of the trench is substantially constant or decreases from the top of the trench to a first depth and increases between a first depth and a second depth, wherein the second depth is closer to the bottom of the trench than the first depth, the trench having an insulating material covering at least the sidewalls of the trench,
wherein the trench comprises an electrically conductive source line in electrical contact with a source region in a second portion of the semiconductor channel extending substantially parallel to the major surface of the substrate, and the insulating material along the sidewalls of the trench is located between the source line and the control gate electrodes.
13. The memory device of claim 12 , wherein the width of the trench is substantially constant or decreases from the second depth to the bottom of the trench.
14. The memory device of claim 12 , wherein the at least one memory film comprises a blocking dielectric, a charge trapping layer or floating gate, and a tunnel dielectric, and the memory film is located between the first portion of the semiconductor channel and at least one of the first material and the second material in the first and second stacks.
15. The memory device of claim 12 , wherein the second portion of the semiconductor channel is electrically connected to the first portion of the semiconductor channel with the plurality of NAND strings.
16. The memory device of claim 12 , wherein the source region comprises a doped portion of the second portion of the semiconductor channel.
17. The memory device of claim 12 , wherein the source line comprises at least one of titanium, titanium nitride, tungsten and tungsten nitride.
18. The memory device of claim 12 , wherein the first material of the stack comprises an insulating material and the second material of the stack comprises at least one of a metal and a metal nitride.
19. The memory device of claim 18 , wherein the first material comprises SiO 2 and the second material comprises at least one of tungsten, tungsten silicide, tungsten nitride, titanium, titanium silicide and titanium nitride.
20. The memory device of claim 12 , further comprising:
a select gate electrode that extends substantially parallel to the major surface of the substrate, wherein the select gate electrode is electrically coupled to the source region and is located in a source select transistor in each of the plurality of NAND strings.
21. The memory device of claim 20 , wherein the NAND strings comprise a plurality of memory device levels, each device level of the plurality of device levels containing a respective one of the plurality of control gate electrodes, and the source select transistor is located below the memory device levels.
22. The memory device of claim 20 , wherein each of the plurality of NAND strings further comprises a respective one of a plurality of drain select transistors located above the memory device levels.
23. The memory device of claim 12 , wherein the trench comprises a first trench, the memory device further comprising a second insulating material-filled trench formed through the stack, wherein the plurality of NAND memory strings are located in an active memory cell area defined between the first trench and the second trench.
24. The memory device of claim 23 , wherein outside of the active memory cell area at least a portion of the control gate electrodes comprise alternating layers of the second material and a third electrically conductive material different from the first material and the second material.
25. The memory device of claim 24 , wherein the third material comprises polysilicon.