Semiconductor device including independent film layer for embedding and/or spacing semiconductor die
A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.
1. A semiconductor device, comprising:
a substrate;
a controller die surface mounted to the substrate;
a film layer formed on the substrate, the film layer lying next to the controller die on the substrate, on one or more sides of the controller die; and
at least one semiconductor die including a semiconductor die having a die attach adhesive affixing the semiconductor die to the film layer.
2. The semiconductor device of claim 1 , wherein the at least one semiconductor die comprises at least one memory die.
3. The semiconductor device of claim 1 , further comprising wire bonds electrically coupling the electronic component to the substrate, the wire bonds embedded in the film layer.
4. The semiconductor device of claim 1 , wherein the semiconductor device is a flash memory package.
5. The semiconductor device of claim 1 , wherein the film layer is a B-stageable epoxy.
6. The semiconductor device of claim 1 , wherein the film layer is an A-stageable epoxy.
7. A semiconductor device, comprising:
a substrate;
an electronic component surface mounted to the substrate;
a B-stageable epoxy film layer formed on the substrate, the film layer spaced from the electronic component on the substrate; and
at least one semiconductor die including a semiconductor die having a die attach adhesive affixing the semiconductor die to the film layer.
8. The semiconductor device of claim 7 , wherein the film layer is formed on the substrate in a shape and position matching a shape and position the semiconductor die on the substrate.
9. The semiconductor device of claim 7 , wherein the electronic component is one of a controller die and a passive component.
10. A semiconductor device, comprising:
a substrate;
a first semiconductor die surface mounted to the substrate, the first semiconductor die being a controller die;
a film layer formed on the substrate, the first semiconductor die being at least partially embedded within the film layer; and
at least one second semiconductor die including a semiconductor die affixed directly to the film layer.
11. The semiconductor device of claim 10 , wherein the film layer is a B-stageable epoxy.
12. The semiconductor device of claim 10 , wherein the film layer is an A-stageable epoxy.
13. The semiconductor device of claim 10 , wherein the film layer is formed on the substrate in a shape and position matching a shape and position the semiconductor die on the substrate.
14. A semiconductor device, comprising:
a substrate;
an electronic component surface mounted to the substrate;
a film layer formed on the substrate, the film layer lying next to the electronic component on the substrate, on one or more sides of the electronic component;
wire bonds electrically coupling the electronic component to the substrate, the wire bonds embedded in the film layer; and
at least one semiconductor die including a semiconductor die having a die attach adhesive affixing the semiconductor die to the film layer.
15. The semiconductor device of claim 14 , wherein the electronic component is a controller die.
16. The semiconductor device of claim 14 , wherein the electronic component is a passive component.
17. The semiconductor device of claim 14 , wherein the at least one semiconductor die comprises at least one memory die.
18. The semiconductor device of claim 14 , wherein the semiconductor device is a flash memory package.
19. The semiconductor device of claim 14 , wherein the film layer is a B-stageable epoxy.
20. The semiconductor device of claim 14 , wherein the film layer is an A-stageable epoxy.