Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device
One illustrative method disclosed includes, among other things, forming a semiconductor device above a semiconducting substrate, forming a device level contact to the semiconductor device and, after forming the device level contact, performing at least one common process operation so as to form a through-substrate-via (TSV) in a trench in the substrate, a TSV contact structure that is conductively coupled to the TSV and a conductive metallization element that is conductively coupled to the device level contact.
1. A method, comprising:
forming a semiconductor device in and above a semiconducting substrate;
forming a device level contact to said semiconductor device; and
after forming said device level contact, performing at least one common process operation so as to form each of a through-substrate-via (TSV) in a trench in said substrate, a TSV contact structure that is conductively coupled to said TSV that is formed in said trench in said substrate, and a conductive metallization element that is conductively coupled to said device level contact, wherein said at least one common process operation is performed at the same time during a same process step.
2. The method of claim 1 , wherein said semiconductor device is one of an active semiconductor device or a passive semiconductor device.
3. The method of claim 1 , wherein said semiconductor device is a transistor, said device level contact comprises one of a CA source/drain contact for establishing electrical contact to a source/drain region of said transistor or a CB gate contact for establishing electrical contact to a gate electrode of said transistor and wherein said conductive metallization element is one of a conductive line or conductive via.
4. The method of claim 1 , wherein performing said at least one common process operation comprises performing at least one first common deposition process to form at least one conductive material for said TSV, for said TSV contact structure, and for said conductive metallization element at the same time, the method further comprising thereafter performing at least one second common process operation to remove a portion of said at least one conductive material formed during said first common deposition process, wherein said at least one second common process operation comprises performing at least one CMP process operation.
5. The method of claim 1 , wherein performing said at least one common process operation comprises performing at least one CMP process operation on at least one conductive material formed for said TSV contact structure and for said conductive metallization element.
6. The method of claim 1 , wherein said TSV, said TSV contact structure and said conductive metallization element are each comprised of a same at least one conductive material.
7. The method of claim 6 , wherein said same at least one conductive material comprises at least one of a metal, a metal alloy, copper, tungsten, cobalt, aluminum, ruthenium, tantalum and rhodium.
8. A method, comprising:
forming a semiconductor device in and above a semiconducting substrate;
forming a device level contact to said semiconductor device;
performing at least one first etching process to form a TSV trench in said substrate and a TSV contact opening that extends through at least one layer of insulating material positioned above said substrate;
performing at least one second etching process to form a metallization contact opening for said semiconductor device that extends through said at least one layer of insulating material so as to expose at least a portion of said device level contact; and
performing at least one common process operation so as to form each of a TSV in said TSV trench in said substrate, a TSV contact structure in said TSV contact opening, and a conductive metallization element in said metallization contact opening, wherein said conductive metallization element is conductively coupled to said device level contact, wherein said TSV contact structure is conductively coupled to said TSV that is formed in said trench in said substrate, and wherein said at least one common process operation is performed at the same time during a same process step.
9. The method of claim 8 , wherein performing said at least one common process operation comprises performing at least one first common deposition process to form at least one conductive material for said TSV in said TSV trench, for said TSV contact structure in said TSV contact opening, and for said conductive metallization element in said metallization contact opening, the method further comprising thereafter performing at least one second common process operation to remove a portion of said at least one conductive material formed during said first common deposition process, wherein said at least one second common process operation comprises performing at least one CMP process operation.
10. The method of claim 8 , wherein performing said at least one common process operation comprises performing at least one CMP process operation on at least one conductive material formed for said TSV contact structure and for said conductive metallization element.
11. The method of claim 8 , wherein said at least one first etching process is performed prior to performing said at least one second etching process.
12. The method of claim 8 , wherein said at least one second etching process is performed prior to performing said at least one first etching process.
13. The method of claim 8 , wherein said at least one first etching process is performed prior to performing said at least one second etching process and wherein the method further comprises:
forming a conformal insulating liner layer in said TSV trench, in said TSV contact opening and above said at least one layer of insulating material;
forming a first conductive liner layer on said conformal insulating liner layer;
forming a patterned sacrificial material layer in said TSV trench and in said TSV contact opening above said first conductive liner layer;
performing said at least one second etching process through said patterned sacrificial material layer so as to form said metallization contact opening;
after forming said metallization contact opening, removing portions of said first conductive liner layer not covered by said patterned sacrificial material layer;
removing said patterned sacrificial material layer;
forming a second conductive liner layer in said metallization contact opening and on remaining portions of said first conductive liner layer in said TSV contact opening and in said TSV trench;
performing at least one first common deposition process to form at least one conductive material for said TSV in said TSV trench, said TSV contact structure in said TSV contact opening and said conductive metallization element in said metallization contact opening; and
performing at least one common planarization process to remove a portion of said at least one conductive material formed during said at least one first common deposition process so as to thereby define at least said TSV contact and said conductive metallization element.
14. The method of claim 8 , wherein said at least one first etching process is performed prior to performing said at least one second etching process and wherein the method further comprises:
forming a conformal insulating liner layer in said TSV trench, in said TSV contact opening and above said at least one layer of insulating material;
forming a patterned sacrificial material layer in said TSV trench and in said TSV contact opening above said conformal insulating liner layer;
performing said at least one second etching process through said patterned sacrificial material layer so as to form said metallization contact opening;
removing said patterned sacrificial material layer;
forming a first conductive liner layer in said metallization contact opening and on said conformal insulating liner layer in said TSV contact opening and in said TSV trench;
performing at least one first common deposition process to form at least one conductive material for said TSV in said TSV trench, said TSV contact structure in said TSV contact opening and said conductive metallization element in said metallization contact opening; and
performing at least one common planarization process to remove a portion of said at least one conductive material formed during said at least one first common deposition process so as to thereby define at least said TSV contact and said conductive metallization element.
15. The method of claim 8 , wherein said at least one second etching process is performed prior to performing said at least one first etching process and wherein the method further comprises:
forming a patterned masking layer that covers said metallization contact opening;
performing said at least one first etching process through said patterned masking layer so as to form said TSV trench in said substrate and said TSV contact opening;
removing said patterned masking layer;
after removing said patterned masking layer, forming a first conductive liner layer on and in contact with said substrate in said TSV trench, in said TSV contact opening, in said metallization contact opening and above said at least one layer of insulating material;
performing at least one first common deposition process to form at least one conductive material for said TSV in said TSV trench, said TSV contact structure in said TSV contact opening and said conductive metallization element in said metallization contact opening above said first conductive liner layer; and
performing at least one common planarization process to remove a portion of said at least one conductive material formed during said at least one first common deposition process so as to thereby define at least said TSV contact and said conductive metallization element.
16. The method of claim 8 , wherein said at least one second etching process is performed prior to performing said at least one first etching process and wherein the method further comprises:
forming a patterned masking layer that covers said metallization contact opening;
performing said at least one first etching process through said patterned masking layer so as to form said TSV trench in said substrate and said TSV contact opening;
removing said patterned masking layer;
after removing said patterned masking layer, selectively forming an insulating liner layer on and in contact with said substrate in said TSV trench;
after forming said insulating liner in said TSV trench, forming a first conductive liner layer on said insulating liner layer in said TSV trench, in said TSV contact opening, in said metallization contact opening and above said at least one layer of insulating material;
performing at least one first common deposition process to form at least one conductive material for said TSV in said TSV trench, said TSV contact structure in said TSV contact opening and said conductive metallization element in said metallization contact opening above said first conductive liner layer; and
performing at least one common planarization process to remove a portion of said at least one conductive material formed during said at least one first common deposition process so as to thereby define at least said TSV contact and said conductive metallization element.
17. The method of claim 8 , wherein said at least one first etching process is performed prior to performing said at least one second etching process and wherein the method further comprises:
forming a conformal insulating liner layer in said TSV trench, in said TSV contact opening and above said at least one layer of insulating material;
forming a first conductive liner layer on said conformal insulating liner layer;
forming a patterned sacrificial material layer in said TSV trench and in said TSV contact opening above said first conductive liner layer;
performing said at least one second etching process through said patterned sacrificial material layer so as to form said metallization contact opening;
after forming said metallization contact opening, removing portions of said first conductive liner layer not covered by said patterned sacrificial material layer from within said metallization contact opening;
forming a second conductive liner layer in said metallization contact opening and on said patterned sacrificial material layer;
forming at least one first conductive material on said second conductive liner layer and in said metallization contact opening so as to over-fill said metallization contact opening;
removing said patterned sacrificial material layer;
forming at least one second conductive material on said first conductive liner layer in said TSV contact opening, in said TSV trench and above said at least one first conductive material positioned in said metallization contact opening; and
performing at least one common planarization process to remove a portion of said at least one first conductive material and said at least one second conductive material so as to thereby define at least said TSV contact and said conductive metallization element.
18. The method of claim 17 , wherein said at least one first conductive material and said at least one second conductive material comprise a same material.
19. The method of claim 8 , wherein said TSV contact structure is spaced apart and separate from said conductive metallization element.
20. The method of claim 1 , wherein said TSV contact structure is spaced apart and separate from said conductive metallization element.