Atomic layer deposition methods and structures thereof
A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.
1. A method of semiconductor device fabrication, comprising:
forming a gate dielectric layer over a substrate;
depositing a work-function metal layer over the gate dielectric layer, wherein the work-function metal layer has a first thickness;
performing a pre-treatment process of the work-function metal layer, wherein the pre-treatment process removes an oxidized portion of the work-function metal layer from a top surface of the work-function metal layer to form a treated work-function metal layer, and wherein the treated work-function metal layer has a second thickness less than the first thickness; and
after performing the pre-treatment process, depositing a TiAlC layer over the treated work-function metal layer.
2. The method of claim 1 , wherein the depositing the TiAlC layer is performed sequentially after the pre-treatment process while maintaining the substrate under a vacuum condition.
3. The method of claim 1 , wherein the pre-treatment process includes a precursor selected from the group consisting of: TiCl x , TaCl x , TiF x , HfCl x , WF x , and WCl x , wherein x is between approximately 1 and approximately 6.
4. The method of claim 1 , wherein the work-function metal layer includes at least one of TiN, TaN, TiAlC, TiAl, TiSiN, TaSi, and TiAlN.
5. The method of claim 1 , wherein the work-function metal layer and the TiAlC layer are deposited by atomic layer deposition.
6. The method of claim 1 , further comprising depositing a TiN layer over the TiAlC layer.
7. The method of claim 1 , wherein the pre-treatment process shifts a band edge of the work-function metal layer.
8. The method of claim 1 , wherein the second thickness is at least thirty percent less than the first thickness.
9. A method of semiconductor device fabrication, comprising:
forming a work-function metal layer over a gate dielectric layer, wherein the work-function metal layer has a first thickness;
oxidizing a surface layer of the work-function metal layer;
removing the oxidized surface layer in a first chamber of a processing system, thereby forming a thinned work-function metal layer, wherein the thinned work-function metal layer has a second thickness less than the first thickness; and
while maintaining a vacuum condition of the processing system, depositing a subsequent metal layer over the thinned work-function metal layer in a second chamber of the processing system.
10. The method of claim 9 , wherein the removing the oxidized surface layer further includes removing the oxidized surface layer by way of a thermal chemical reaction between the oxidized surface layer and a precursor selected from the group consisting of: TiCl x , TaCl x , TiF x , HfCl x , WF x , and WCl x , wherein x is between approximately 1 and approximately 6.
11. The method of claim 9 , wherein the work-function metal layer includes at least one of TiN, TaN, TiAlC, TiAl, TiSiN, TaSi, and TiAlN.
12. The method of claim 9 , wherein the work-function metal layer is deposited at a temperature from approximately 200 degrees Celsius to approximately 600 degrees Celsius.
13. The method of claim 10 , wherein the thermal chemical reaction is performed at a temperature from approximately 300 degrees Celsius to approximately 1000 degrees Celsius, and wherein a flow rate of the precursor is between approximately 100 sccm and 8000 sccm.
14. The method of claim 9 , wherein the work-function metal layer includes an N-type work function metal layer.
15. The method of claim 14 , wherein the removing the oxidized surface layer shifts a conduction band edge of the N-type work-function metal layer.
16. A method of semiconductor device fabrication, comprising:
forming a gate stack over a substrate, wherein the forming the gate stack comprises:
depositing a work-function metal layer, wherein the work-function metal layer has a first thickness;
tuning a work-function value of the work-function metal layer by performing a pre-treatment process of the work-function metal layer, wherein the treated work-function metal layer has a second thickness less than the first thickness; and
after tuning the work-function value of the work-function metal layer, depositing another metal layer over the treated work-function metal layer.
17. The method of claim 16 , wherein the forming the gate stack further comprises:
prior to depositing the work-function metal layer, forming a gate dielectric layer over the substrate; and
depositing the work-function metal layer over the gate dielectric layer.
18. The method of claim 16 , wherein the depositing another metal layer is performed sequentially after the tuning the work-function value while maintaining the substrate under a vacuum condition.
19. The method of claim 16 , wherein the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form the treated work-function metal layer.
20. The method of claim 16 , wherein the pre-treatment process includes a precursor selected from the group consisting of: TiCl x , TaCl x , TiF x , HfCl x , WF x , and WCl x , wherein x is between approximately 1 and approximately 6.