Waveguide structures used in phonotics chip packaging
The disclosure relates to semiconductor structures and, more particularly, to waveguide structures used in phonotics chip packaging and methods of manufacture. The structure includes: a first die comprising photonics functions including a waveguide structure; a second die bonded to the first die and comprising CMOS logic functions; and an optical fiber optically coupled to the waveguide structure and positioned within a cavity formed in the second die.
1. A structure, comprising:
a first die comprising photonics functions including a waveguide structure;
a second die bonded to the first die and comprising CMOS logic functions; and
an optical fiber optically coupled to the waveguide structure and positioned within a cavity formed in the second die.
2. The structure of claim 1 , wherein the bond between the first die and the second die is an oxide-oxide bond.
3. The structure of claim 2 , wherein the oxide-oxide bond comprises a BOX layer on an upper surface of the first die and a dielectric layer on an upper surface of the second die.
4. The structure of claim 2 , wherein the waveguide structure is surrounded by material that has a matching refractive index.
5. The structure of claim 4 , wherein the material that has the matching refractive index is SiO 2 .
6. The structure of claim 5 , wherein the SiO 2 fills a trench underneath the waveguide structure on the first die and a trench in the second die.
7. The structure of claim 1 , wherein the cavity is a V-groove in Si of second die.
8. The structure of claim 1 , further comprising an interposer connected to the second die.
9. The structure of claim 8 , wherein the interposer is BSPG.
10. The structure of claim 8 , wherein the interposer is connected to the second die by solder connection.
11. The structure of claim 8 , further comprising a polymer spacer on the interposer for z-alignment of the optical fiber to waveguide structure.
12. The structure of claim 8 , wherein the interposer includes a notch which is structured to accommodate the optical fiber.
13. A structure, comprising:
a first substrate comprising:
a plurality of CMOS devices;
an etched channel to support an optical fiber;
a trench which includes fill material with a refractive index suitable for optical systems; and
a first dielectric layer disposed on the first substrate; and
a second substrate comprising:
a dielectric layer which is coupled to the first dielectric layer;
a waveguide structure; and
an undercut trench underlying the waveguide structure and filled with underfill material that has a matching refractive index as the fill material.
14. The structure of claim 13 , wherein the fill material and the underfill material is SiO 2 .
15. The structure of claim 13 , wherein the waveguide structure is surrounded by the fill material and the underfill material.
16. The structure of claim 13 , wherein the first substrate is devoid of photonics functions.
17. The structure of claim 13 , further comprising an interposer connected to the second substrate and overlays the waveguide structure is and supported by a spacer on a bottom side.
18. The structure of claim 17 , wherein the interposer comprises an etched channel to support the optical fiber.
19. The structure of claim 1 , wherein the cavity of the second die is an etched channel to support the optical fiber and the second die further comprises a first dielectric layer disposed on the second die and a trench which includes fill material with a refractive index suitable for optical systems.
20. The structure of claim 19 , wherein the first die includes a dielectric layer which is coupled to the first dielectric layer and the first die further comprises an undercut trench underlying a waveguide structure and filled with underfill material that has a matching refractive index as the fill material.