IP Library Granted Patent US 10,109,617
Granted Patent B2
US 10,109,617 · App. 15/652,559 · Granted Oct 23, 2018

Solid state drive package

Inventors: Kwang-Ryul Lee (Asan-si, KR); Boseong Kim (Songnam-si, KR); Taeduk Nam (Seoul, KR); Wangju Lee (Cheonan-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L25/18H01L21/561H01L21/565H01L23/3128H01L23/5383H01L23/5385H01L23/5386H01L23/552H01L24/48H01L25/0652H01L25/0655H01L25/105H01L24/32H01L24/73H01L2224/32145H01L2224/32225H01L2224/48091H01L2224/48106H01L2224/48145H01L2224/48227H01L2224/73265H01L2225/0651H01L2225/06506H01L2225/06548H01L2225/06562H01L2225/06565H01L2225/107H01L2225/1023H01L2924/1443H01L2924/19105
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Quick Facts
Patent No.
US 10,109,617
App. No.
15/652,559
Granted
Oct 23, 2018
Kind
B2
Abstract

A solid state drive package is provided. The solid state drive package may include an integrated circuit substrate including: a lower redistribution layer; a first chip and a second chip provided on the lower redistribution layer; and a connection substrate provided on the lower redistribution layer, the connection substrate provided on an outer periphery of the first chip and the second chip; and a plurality of third chips provided on the integrated circuit substrate. The plurality of third chips are electrically connected to the first chip and the second chip via the connection substrate and the lower redistribution layer.

Claims (63)

1. A solid state drive (SSD) package, comprising:

an integrated circuit substrate comprising:

a lower redistribution layer;

a volatile memory and a memory controller, the volatile memory and the memory controller being provided on the lower redistribution layer; and

a connection substrate provided on the lower redistribution layer, the connection substrate provided on an outer periphery of the volatile memory and an outer periphery of the memory controller;

a plurality of nonvolatile memory devices provided on the integrated circuit substrate;

an upper mold layer provided on a top surface of the integrated circuit substrate to cover the plurality of nonvolatile memory devices; and

a shielding layer extending from side surfaces of the integrated circuit substrate to side surfaces of the upper mold layer and a top surface of the upper mold layer,

wherein the plurality of nonvolatile memory devices are electrically connected to the volatile memory and the memory controller via the connection substrate and the lower redistribution layer.

2. The SSD package of claim 1 , wherein the lower redistribution layer comprises:

at least two lower insulating layers covering a bottom surface of the connection substrate, a bottom surface of the volatile memory, and a bottom surface of the memory controller;

at least one lower redistribution pattern layer provided between the at least two lower insulating layers and coupled to the connection substrate, the volatile memory, and the memory controller; and

outer connection pads connected to the at least one lower redistribution pattern layer.

3. The SSD package of claim 2 , wherein the volatile memory is connected to the memory controller via the at least one lower redistribution pattern layer.

4. The SSD package of claim 2 , wherein the connection substrate is connected to the volatile memory and the memory controller via the at least one lower redistribution pattern layer.

5. The SSD package of claim 1 , wherein a thickness of the lower redistribution layer is smaller than a thickness of the connection substrate.

6. The SSD package of claim 1 , further comprising passive devices provided on the integrated circuit substrate, the passive devices being connected to the volatile memory via the connection substrate and the lower redistribution layer.

7. The SSD package of claim 1 , further comprising passive devices provided on the lower redistribution layer, the passive devices being connected to the volatile memory via the lower redistribution layer.

8. The SSD package of claim 1 , wherein the integrated circuit substrate further comprises an upper redistribution layer provided to cover a top surface of the connection substrate, a top surface of the volatile memory, and a top surface of the memory controller, and

wherein the upper redistribution layer is electrically connected to the connection substrate.

9. The SSD package of claim 8 , wherein a thickness of the upper redistribution layer is smaller than a thickness of the connection substrate.

10. The SSD package of claim 8 , wherein the plurality of nonvolatile memory devices are electrically connected to the upper redistribution layer via metal wires.

11. The SSD package of claim 8 , wherein the upper redistribution layer comprises:

at least two upper insulating layers provided on the top surfaces of the connection substrate, the top surface of the volatile memory, and the top surface of the memory controller; and

at least one upper redistribution pattern layer provided between the at least two upper insulating layers, the at least one upper redistribution pattern layer being coupled to the connection substrate,

wherein the plurality of nonvolatile memory devices are stacked on an uppermost one of the at least two upper insulating layers.

12. The SSD package of claim 1 , further comprising:

a package substrate provided between the integrated circuit substrate and the plurality of volatile memory devices; and

connection terminals provided on a bottom surface of the package substrate to connect the package substrate to the connection substrate,

wherein the plurality of nonvolatile memory devices are electrically connected to the package substrate via metal wires.

13. The SSD package of claim 12 , further comprising an upper mold layer provided on a top surface of the package substrate to cover the plurality of nonvolatile memory devices.

14. The SSD package of claim 1 , wherein the volatile memory comprises a controller chip, the memory controller comprises a second memory chip and the plurality of nonvolatile memory devices comprise a plurality of third memory chips.

15. A solid state drive (SSD) package, comprising:

an integrated circuit substrate comprising:

a lower redistribution layer;

a first chip and a second chip, the first chip and the second chip being provided on the lower redistribution layer; and

a connection substrate provided on the lower redistribution layer, the connection substrate provided on an outer periphery of the first chip and an outer periphery of the second chip;

a plurality of third chips provided on the integrated circuit substrate;

an upper mold layer provided on a top surface of the integrated circuit substrate to cover the plurality of third chips; and

a shielding layer extending from side surfaces of the integrated circuit substrate to side surfaces of the upper mold layer and a top surface of the upper mold layer,

wherein the plurality of third chips are electrically connected to the first chip and the second chip via the connection substrate and the lower redistribution layer.

16. A solid state drive (SSD) package, comprising:

an integrated circuit substrate comprising:

a first redistribution layer;

a first chip and a second chip, the first chip and the second chip being provided on the first redistribution layer; and

a connection substrate provided on the first redistribution layer, the connection substrate provided on an outer periphery of the first chip and the second chip;

an upper package provided on the integrated circuit substrate and comprising:

a package substrate; and

a plurality of third chips stacked on the package substrate;

a connection layer provided between the integrated circuit substrate and the upper package; and

a shielding layer extending from side surfaces of the integrated circuit substrate to side surfaces of the upper package, side surfaces of the connection layer, and a top surface of the upper package,

wherein the connection layer comprises at least one of a second redistribution layer and a connection terminal layer, and

wherein the plurality of third chips are electrically connected to the first chip via the connection substrate and the first redistribution layer.

17. The SSD package of claim 16 , wherein the connection terminal layer comprises a plurality of solder balls or a plurality of solder bumps.

18. The SSD package of claim 16 , wherein the second redistribution layer comprises:

at least two second insulating layers provided on a top surface of the connection substrate, a top surface of the first chip, and a top surface of the second chip; and

at least one second redistribution pattern layer provided between the at least two second insulating layers, the at least one second redistribution pattern layer being coupled to the connection substrate,

wherein the plurality of third chips are stacked on an uppermost one of the at least two second insulating layers.

19. The SSD package of claim 16 , wherein the first redistribution layer comprises:

at least two first insulating layers covering a bottom surface of the connection substrate, a bottom surface of the first chip, and a bottom surface of the second chip;

at least one lower redistribution pattern layer provided between the at least two first insulating layers and coupled to the connection substrate, the first chip, and the second chip; and

outer connection pads connected to the at least one first redistribution pattern layer.

20. The SSD package of claim 16 , wherein the first chip comprises a controller chip, the second chip comprises a second memory chip and the plurality of third chips comprise a plurality of third memory chips.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2017
From: LEE, KWANG-RYUL; KIM, BOSEONG; NAM, TAEDUK; LEE, WANGJU
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 043031/0792 →
Priority Claims (1)
KR 10-2016-0129206 · Oct 6, 2016 · national
Continuity (2)
Provisional Application 62364933 · Jul 21, 2016
Related Publication 20180026022A1 · Jan 25, 2018
Cited By (18)
US 12,255,195 US 12,268,012 US 12,278,192 US 12,327,790 US 12,327,813 US 12,327,816 US 12,354,966 US 12,368,438 US 12,464,820 US 12,469,790 US 12,476,637 US 12,519,033 US 12,526,945 US 12,555,628 US 12,614,012 US 12,633,338 US 12,633,926 US 12,652,052