IP Library Granted Patent US 10,157,849
Granted Patent B2
US 10,157,849 · App. 15/443,490 · Granted Dec 18, 2018

Packages with molding structures and methods of forming the same

Inventors: Chih-Fan Huang (Kaohsiung, TW); Cheng-Tar Wu (Jhongli, TW); Ming-Da Cheng (Jhubei, TW); Chung-Shi Liu (Hsinchu, TW); Chen-Hua Yu (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L23/5389H01L21/481H01L21/486H01L21/4853H01L21/4857H01L21/565H01L23/295H01L23/3114H01L23/49811H01L23/5383H01L23/5384H01L23/5386H01L24/19H01L24/20H01L24/97H01L25/105H01L25/50H01L23/3121H01L23/49816H01L23/49827H01L2224/0401H01L2224/04042H01L2224/04105H01L2224/12105H01L2224/16227H01L2224/18H01L2224/19H01L2224/24137H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/73267H01L2224/92244H01L2224/97H01L2225/1035H01L2225/1041H01L2225/1058H01L2924/15311H01L2924/18162
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Quick Facts
Patent No.
US 10,157,849
App. No.
15/443,490
Granted
Dec 18, 2018
Kind
B2
Abstract

A method includes molding a device die in a molding material, wherein a metal pillar of the device die is exposed through a surface of the molding material. A substrate is adhered to the molding material. The substrate includes a redistribution layer that further includes redistribution lines. A plating is performed to fill a through-opening in the substrate to form a through-via. The through-via is plated on the metal pillar of the device die. An electrical connector is formed to electrically couple to the through-via.

Claims (48)

1. A package comprising:

a device die comprising a metal pillar;

an encapsulating material encapsulating the device die therein, with the device die exposed through the encapsulating material; and

a substrate over and attached to the encapsulating material, wherein the substrate comprises:

a plurality of dielectric layers;

a plurality of redistribution layers in the plurality of dielectric layers;

a first through-via penetrating through the plurality of dielectric layers, wherein the first through-via is in contact with the metal pillar, and the first through-via is in contact with a sidewall of a redistribution line in the plurality of redistribution layers; and

a solder region in contact with a top surface of the first through-via.

2. The package of claim 1 , wherein the first through-via comprises a substantially straight edge extending from a top surface to a bottom surface of the plurality of dielectric layers.

3. The package of claim 1 further comprising:

a dielectric solder mask contacting the top surface of the substrate, wherein the dielectric solder mask and the device die are on opposite sides of the substrate, and the solder region penetrates through the dielectric solder mask.

4. The package of claim 1 further comprising:

a second through-via penetrating through the encapsulating material; and

a third through-via penetrating through the substrate, wherein the third through-via is in contact with the second through-via.

5. The package of claim 1 further comprising an electrical path extending into the plurality of dielectric layers, wherein the electrical path comprises portions of a plurality of redistribution lines in different ones of the dielectric layers, and edges of the portions of the plurality of redistribution lines are not flushed with each other.

6. The package of claim 1 , wherein the first through-via penetrates through the plurality of dielectric layers, and the plurality of dielectric layers comprises a bottom dielectric layer having a bottom surface contacting a top surface of the encapsulating material, and the first through-via extends to the bottom surface of the bottom dielectric layer.

7. The package of claim 1 , wherein the first through-via has no distinguishable interface therein.

8. A package comprising:

a device die;

an encapsulating material encapsulating the device die therein; and

a substrate over and adhered to both the device die and the encapsulating material, wherein the substrate comprises:

a plurality of redistribution lines formed of a first conductive material; and

a through-via penetrating through the substrate, wherein the through-via is formed of a second conductive material different from the first conductive material, and wherein the through-via comprises:

a first edge contacting an edge of a first redistribution line in the substrate; and

a second edge contacting an edge of a second redistribution line in the substrate, wherein the first redistribution line and the second redistribution line are in different dielectric layers of the substrate.

9. The package of claim 8 , wherein the through-via has a substantially straight edge extending from a top surface to a bottom surface of the substrate, and the plurality of redistribution lines is connected to form an electrical path extending through a plurality of dielectric layers in the substrate, and the electrical path does not have a substantially straight edge extending into all of the plurality of dielectric layers.

10. The package of claim 8 further comprising a plurality of dielectric layers, with the plurality of redistribution lines in the plurality of dielectric layers, wherein the through-via penetrates through the plurality of dielectric layers.

11. The package of claim 8 , wherein the first redistribution line and the second redistribution line are on opposite sides of the through-via.

12. The package of claim 8 , wherein the through-via has a bottom surface, and the device die comprises a metal pillar having a top surface contacting the bottom surface of the through-via.

13. The package of claim 8 further comprising an additional through-via penetrating through the encapsulating material, wherein the through-via has a bottom surface contacting a top surface of the additional through-via.

14. A package comprising:

a device die comprising a metal pillar;

a metal post;

an encapsulating material molding the device die and the metal post therein;

an adhesive layer over the encapsulating material; and

a substrate over and attached to the encapsulating material through the adhesive layer, wherein the substrate comprises:

a plurality of dielectric layers, wherein a bottom dielectric layer in the plurality of dielectric layers has a bottom surface in contact with the adhesive layer; and

a first through-via and a second through-via penetrating through the substrate, wherein the first through-via and the second through-via are in contact with the metal post and the metal pillar, respectively, wherein the first through-via comprises:

a first edge contacting an edge of a first redistribution line in the substrate; and

a second edge contacting an edge of a second redistribution line in the substrate, wherein the first redistribution line and the second redistribution line are on opposite sides of the first through-via.

15. The package of claim 14 further comprising a plurality of redistribution lines in the substrate, wherein the first through-via is formed of a different metallic material than the plurality of redistribution lines.

16. The package of claim 14 further comprising:

a solder mask over and contacting the substrate; and

a solder region extending into the solder mask to contact one of the first through-via and the second through-via.

17. The package of claim 14 , wherein each of the first through-via and the second through-via has a substantially straight sidewall extending into the plurality of dielectric layers in the substrate.

18. The package of claim 14 , wherein the first redistribution line and the second redistribution line are in different dielectric layers of the substrate.

19. The package of claim 14 , wherein the first through-via further extends to a bottom surface of the bottom dielectric layer.

20. The package of claim 14 , wherein the first through-via has no distinguishable interface therein.

Continuity (2)
Division 14446583 · Jul 30, 2014
Related Publication 20170170124A1 · Jun 15, 2017
Cited By (16)
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